Patentable/Patents/US-8680427
US-8680427

Uniform large-grained and gain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon

PublishedMarch 25, 2014
Assigneenot available in USPTO data we have
Inventorsnot available in USPTO data we have
Technical Abstract

A device on a supporting substrate is provided including a semiconductor film, having two or more rectangular crystalline regions spaced from each other, wherein each of the two or more rectangular crystalline regions comprises one single crystal region. The device can further include two or more thin-film transistors, wherein each of the two or more thin-film transistors comprises one or more active-channel regions. Each of the one or more active-channel regions can comprise at least one of said two or more rectangular crystalline regions. The device can further include an integrated circuit which comprises of the two or more thin-film transistors.

Patent Claims
16 claims

Legal claims defining the scope of protection, as filed with the USPTO.

1

1. A device on a supporting substrate, comprising: a semiconductor film, including: at least a first rectangular crystalline region and a second rectangular crystalline region, wherein the first rectangular crystalline region is spaced from the second rectangular crystalline region, wherein each of the first rectangular crystalline region and the second rectangular crystalline region comprises one single crystal region having a width dimension up to approximately 5 micrometers, wherein each of the first rectangular crystalline region and the second rectangular crystalline region have long directionally controlled grains and each of the first rectangular crystalline region and the second rectangular crystalline region are absent of nucleation therein.

2

2. The device of claim 1 , further comprising two or more thin-film transistors, wherein each of said two or more thin-film transistors comprises one or more active-channel regions, and wherein each of said one or more active-channel regions comprises at least one of the first or second rectangular crystalline regions.

3

3. The device of claim 2 , further comprising an integrated circuit which comprises said two or more thin-film transistors.

4

4. The device of claim 2 , wherein said device is a liquid-crystal display device which comprises said two or more thin-film transistors.

5

5. The device of claim 4 , wherein said two or more thin-film transistors are pixel-controller thin-film transistors.

6

6. The device of claim 2 , wherein said device is a liquid-crystal display device which comprises a pixel-driver integrated circuit which comprises said two or more thin-film transistors.

7

7. The device of claim 1 , wherein the supporting substrate comprises a glass substrate, wherein said semiconductor film is formed on the glass substrate.

8

8. The device of claim 1 , wherein the supporting substrate comprises a substantially planar substrate, wherein said semiconductor film is formed on the substantially planar substrate.

9

9. A device on a supporting substrate, comprising: a semiconductor film, including: two or more rectangular crystalline regions, wherein each of said two or more rectangular crystalline regions abuts at least one other of said two or more rectangular crystalline regions and wherein each of said two or more rectangular crystalline regions comprises one single crystal region having a width dimension up to approximately 5 micrometers, wherein the two or more rectangular crystalline regions have long directionally controlled grains and long grain boundaries, and wherein the each of said two or more rectangular crystalline regions abuts at least one other of said two or more rectangular crystalline regions along a respective long grain boundary and wherein each of said two or more rectangular crystalline regions are absent of nucleation therein.

10

10. The device of claim 9 , further comprising two or more thin-film transistors, wherein each of said two or more thin-film transistors comprises one or more active-channel regions, and wherein each of said one or more active-channel regions comprises at least one of said two or more rectangular crystalline regions.

11

11. The device of claim 10 , further comprising an integrated circuit which comprises said two or more thin-film transistors.

12

12. The device of claim 10 , wherein said device is a liquid-crystal display device which comprises said two or more thin-film transistors.

13

13. The device of claim 12 , wherein said two or more thin-film transistors are pixel-controller thin-film transistors.

14

14. The device of claim 10 , wherein said device is a liquid-crystal display device which comprises of a pixel-driver integrated circuit which comprises said two or more thin-film transistors.

15

15. The device of claim 9 , wherein the supporting substrate comprises a glass substrate and said semiconductor film is formed on the glass substrate.

16

16. The device of claim 9 , wherein the supporting substrate comprises a substantially planar substrate and said semiconductor film is formed on the substantially planar substrate.

Classification Codes (CPC)

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Patent Metadata

Filing Date

April 7, 2009

Publication Date

March 25, 2014

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Cite as: Patentable. “Uniform large-grained and gain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon” (US-8680427). https://patentable.app/patents/US-8680427

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