A method for patterning an epitaxial substrate with nano-patterns, includes: forming a plurality of zinc oxide nano-particles on an epitaxial substrate; dry-etching the epitaxial substrate exposed from the zinc oxide nano-particles to form nano-patterns corresponding to the zinc oxide nano-particles; and removing the zinc oxide nano-particles on the epitaxial substrate. A method for forming a light-emitting diode having a patterned epitaxial substrate with the nano-patterns is also disclosed.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for patterning an epitaxial substrate comprising: (a) forming a plurality of zinc oxide nano-particles on an epitaxial substrate by the following substeps: (i) dipping the epitaxial substrate in a first solution that includes zinc ammonium complex ions such that the zinc ammonium complex ions are adsorbed on the epitaxial substrate; (ii) subjecting the zinc ammonium complex ions adsorbed on the epitaxial substrate to a hydrolysis reaction so as to form zinc hydroxide on the epitaxial substrate; and (iii) subjecting the zinc hydroxide on the epitaxial substrate to a dehydration reaction to form the zinc oxide nano-particles on the epitaxial substrate; (b) dry-etching the epitaxial substrate exposed between the zinc oxide nano-particles to form nano-patterns below the zinc-oxide nano-particles; and (c) removing the zinc oxide nano-particles on the epitaxial substrate exposing said nano-patterns.
2. The method of claim 1 , wherein: the hydrolysis reaction is conducted by dipping the epitaxial substrate in water that has a temperature not greater than 35° C.; and the dehydration reaction is conducted by dipping the epitaxial substrate in a second solution that includes water and that has a temperature not lower than 80° C.
3. The method of claim 2 , wherein the first solution has a pH value not greater than 10, and a concentration of the zinc ammonium complex ions not less than 0.1 mol/L.
4. The method of claim 2 , wherein the concentration of the zinc ammonium complex ions ranges from 0.1 mol/L to 0.2 mol/L.
5. The method of claim 2 , wherein the second solution further includes ethylene glycol, a volume ratio of the ethylene glycol to the water ranging from 1:1 to 1:4.
6. The method of claim 2 , wherein the temperature of the second solution is not less than 90° C.
7. The method of claim 1 , wherein the epitaxial substrate includes a base member that is made of a material selected from aluminum oxide, silicon carbide, silicon and aluminum nitride, and an etched layer that is formed into the nano-patterns in step (b), that is formed on the base member and that is made of a material selected from silicon oxide, silicon oxynitride, silicon nitride and magnesium fluoride.
8. The method of claim 1 , wherein the zinc oxide nano-particles have an average size ranging from 100 nm to 500 nm, and an average gap between two adjacent ones of the zinc oxide nano-particles ranges from 100 nm to 500 nm.
9. A method for forming a light-emitting diode, comprising: (a) forming a plurality of zinc oxide nano-particles on an epitaxial substrate by the following substeps: (i) dipping the epitaxial substrate in a first solution that includes zinc ammonium complex ions such that the zinc ammonium complex ions are adsorbed on the epitaxial substrate; (ii) subjecting the zinc ammonium complex ions adsorbed on the epitaxial substrate to a hydrolysis reaction so as to form zinc hydroxide on the epitaxial substrate; and (iii) subjecting the zinc hydroxide on the epitaxial substrate to a dehydration reaction to form the zinc oxide nano-particles on the epitaxial substrate; (b) dry-etching the epitaxial substrate exposed between the zinc oxide nano-particles to form nano-patterns below the zinc-oxide nano-particles; and (c) removing the zinc oxide nano-particles on the epitaxial substrate exposing said nano-patterns; (d) epitaxial growing a semiconductor light-emitting unit on the nano-patterns of the epitaxial substrate; and (e) forming an electrode unit for supplying electricity to the semiconductor light-emitting unit.
10. The method of claim 9 , wherein: the hydrolysis reaction is conducted by dipping the epitaxial substrate in water that has a temperature not greater than 35° C.; and the dehydration reaction is conducted by dipping the epitaxial substrate in a second solution that includes water and that has a temperature not lower than 80° C.
11. The method of claim 10 , wherein the first solution has a pH value not greater than 10, and a concentration of the zinc ammonium complex ions is not less than 0.1 mol/L.
12. The method of claim 10 , wherein the concentration of the zinc ammonium complex ions ranges from 0.1 mol/L to 0.2 mol/L.
13. The method of claim 10 , wherein the second solution further includes ethylene glycol, a volume ratio of the ethylene glycol to the water ranging from 1:1 to 1:4.
14. The method of claim 10 , wherein the temperature of the second solution is not less than 90° C.
15. The method of claim 9 , wherein the epitaxial substrate includes a base member that is made of a material selected from aluminum oxide, silicon carbide, silicon and aluminum nitride, and an etched layer that is formed into the nano-patterns in the step (b), that is formed on the base member and that is made of a material selected from silicon oxide, silicon oxynitride, silicon nitride and magnesium fluoride.
16. The method of claim 9 , wherein the zinc oxide nano-particles have an average size ranging from 100 nm to 500 nm, and an average gap between two adjacent ones of the zinc oxide nano-particles ranges from 100 nm to 500 nm.
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April 16, 2012
April 15, 2014
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