A method for fabricating black silicon by using plasma immersion ion implantation is provided, which includes: putting a silicon wafer into a chamber of a black silicon fabrication apparatus; adjusting processing parameters of the black silicon fabrication apparatus to preset scales; generating plasmas in the chamber of the black silicon fabrication apparatus; implanting reactive ions among the plasmas into the silicon wafer, and forming the black silicon by means of the reaction of the reactive ions and the silicon wafer. The method can form the black silicon which has a strong light absorption property and is sensitive to light, and has advantages of high productivity, low cost and simple production process.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for fabricating black silicon by using plasma immersion ion implantation, wherein putting a silicon wafer into a black silicon fabrication apparatus, and using the plasma immersion ion implantation process to fabricate black silicon; wherein the method comprises: (a) putting said silicon wafer into a chamber of said black silicon fabrication apparatus; (b) adjusting the processing parameters of said black silicon fabrication apparatus to allow them to enter into preset numerical scales; (c) generating plasmas in the chamber of said black silicon fabrication apparatus, the reactive ions among said plasmas are implanted into said silicon wafer; and (d) forming black silicon by means of the reaction of said reactive ions and said silicon wafer.
2. The method for fabricating black silicon by using plasma immersion ion implantation of claim 1 , wherein said step (a) further comprises said silicon wafer electrical connected to a power supply capable of applying bias voltage.
3. The method for fabricating black silicon by using plasma immersion ion implantation of claim 2 , wherein said processing parameters comprise the base pressure and operating pressure implanted into said chamber.
4. The method for fabricating black silicon by using plasma immersion ion implantation of claim 3 , wherein said step (b) comprises the following steps: pumping the gas in said chamber to make the pressure implanted into said chamber enter into a preset base pressure scale, and said preset base pressure scale ranges from 10 −7 Pa to 1000 Pa; and filling into said chamber with the mixed gas which can react with said silicon wafer, and adjusting the flow of said mixed gas to make the pressure implanted into said chamber enter into a preset operating pressure scale, and said preset operating pressure scale ranges from 10 −3 Pa to 1000 Pa.
5. The method for fabricating black silicon by using plasma immersion ion implantation of claim 4 , wherein said step (b) comprises the following steps: pumping the gas in said chamber to make the pressure implanted into said chamber enter into a preset base pressure scale, and said preset base pressure scale ranges from 10 −7 Pa to 1000 Pa; and filling into said chamber with the mixed gas which can react with said silicon wafer, and adjusting the speed of pumping the gas in said chamber by said black silicon fabrication apparatus to make the pressure implanted into said chamber enter into a preset operating pressure scale, and said preset operating pressure scale ranges from 10 −3 Pa to 1000 Pa.
6. The method for fabricating black silicon by using plasma immersion ion implantation of claim 5 , wherein said mixed gas consist of the gas having an etching effect and the gas having a passivation effect.
7. The method for fabricating black silicon by using plasma immersion ion implantation of claim 6 , wherein said gas having an etching effect includes SF 6 , CF 4 , CHF 3 , C 4 F 8 , NF 3 , SiF 4 , C 2 F 6 , HF, BF 3 , PF 3 , Cl 2 , HCl, SiH 2 Cl 2 , SiCl 4 , BCl 3 or HBr, and the gas having a passivation effect includes O 2 , N 2 O, or N 2 .
8. The method for fabricating black silicon by using plasma immersion ion implantation of claim 7 , wherein said processing parameters further includes the volume ratio between said gas having an etching effect and said gas having a passivation effect.
9. The method for fabricating black silicon by using plasma immersion ion implantation of claim 8 , wherein said the step (b) further comprises the following step: adjusting the volume ratio scale between said gas having an etching effect and said gas having a passivation effect in said mixed gas to allow it to enter into a preset volume ratio scale, and said preset volume ratio scale ranges from 0.01 to 100.
10. The method for fabricating black silicon by using plasma immersion ion implantation of claim 9 , wherein said processing parameters further include the output power and frequency of the plasma power supply of said black silicon fabrication apparatus as well as the frequency, pulse width and duty ratio of the power supply which can apply a bias voltage, and said bias voltage.
11. The method for fabricating black silicon by using plasma immersion ion implantation of claim 10 , wherein said step (b) further comprises the following step: adjusting the output power of said plasma power supply to allow it to enter into a preset output power scale, and said preset output power scale ranges from 1 to 100000 W.
12. The method for fabricating black silicon by using plasma immersion ion implantation of claim 10 , wherein said step (b) further comprises the following step: adjusting said bias voltage to allow it to enter into a preset bias voltage scale, and said preset bias voltage scale ranges from −100000 to 100000V.
13. The method for fabricating black silicon by using plasma immersion ion implantation of claim 10 , wherein said step (b) further comprises the following step: adjusting the frequency of said plasma power supply to allow it to enter into a preset frequency scale of the plasma power supply, and said preset frequency scale of the plasma power supply ranges from DC to 10 GHz.
14. The method for fabricating black silicon by using plasma immersion ion implantation of claim 10 , wherein said step (b) further comprises the following step: adjusting the pulse width of said power supply which can apply a bias voltage to allow it to enter into a preset pulse width scale, and said preset pulse width scale ranges from 1 us to 1 s.
15. The method for fabricating black silicon by using plasma immersion ion implantation of claim 10 , wherein said step (b) further comprises the following step: adjusting the frequency of said power supply which can apply a bias voltage to allow it to enter into a preset frequency scale of the power supply, and said preset frequency scale of the power supply ranges from DC to 10 GHz.
16. The method for fabricating black silicon by using plasma immersion ion implantation of claim 10 , wherein said step (b) further comprises the following step: adjusting the duty ratio of said power supply which can apply a bias voltage to allow it to enter into a preset duty ratio scale, and said preset duty ratio scale ranges from 1% to 99%.
17. The method for fabricating black silicon by using plasma immersion ion implantation of claim 10 , wherein said bias voltage consist of a variety of bias voltages and combination.
18. The method for fabricating black silicon by using plasma immersion ion implantation of claim 5 , wherein said mixed gas consist of the gas having an etching effect and the gas having a passivation effect.
19. The method for fabricating black silicon by using plasma immersion ion implantation of claim 18 , wherein said gas having an etching effect includes SF 6 , CF 4 , CHF 3 , C 4 F 8 , NF 3 , SiF 4 , C 2 F 6 , HF, BF 3 , PF 3 , Cl 2 , HCl, SiH 2 Cl 2 , SiCl 4 , BCl 3 or HBr, and the gas having a passivation effect includes O 2 , N 2 O, or N 2 .
20. The method for fabricating black silicon by using plasma immersion ion implantation of claim 19 , wherein said processing parameters further includes the volume ratio between said gas having an etching effect and said gas having a passivation effect.
21. The method for fabricating black silicon by using plasma immersion ion implantation of claim 20 , wherein said the step (b) further comprises the following step: adjusting the volume ratio scale between said gas having an etching effect and said gas having a passivation effect in said mixed gas to allow it to enter into a preset volume ratio scale, and said preset volume ratio scale ranges from 0.01 to 100.
22. The method for fabricating black silicon by using plasma immersion ion implantation of claim 21 , wherein said processing parameters further include the output power and frequency of the plasma power supply of said black silicon fabrication apparatus as well as the frequency, pulse width and duty ratio of the power supply which can apply a bias voltage, and said bias voltage.
23. The method for fabricating black silicon by using plasma immersion ion implantation of claim 22 , wherein said step (b) further comprises the following step: adjusting the output power of said plasma power supply to allow it to enter into a preset output power scale, and said preset output power scale ranges from 1 to 100000 W.
24. The method for fabricating black silicon by using plasma immersion ion implantation of claim 22 , wherein said step (b) further comprises the following step: adjusting said bias voltage to allow it to enter into a preset bias voltage scale, and said preset bias voltage scale ranges from −100000 to 100000V.
25. The method for fabricating black silicon by using plasma immersion ion implantation of claim 22 , wherein said step (b) further comprises the following step: adjusting the frequency of said plasma power supply to allow it to enter into a preset frequency scale of the plasma power supply, and said preset frequency scale of the plasma power supply ranges from DC to 10 GHz.
26. The method for fabricating black silicon by using plasma immersion ion implantation of claim 22 , wherein said step (b) further comprises the following step: adjusting the pulse width of said power supply which can apply a bias voltage to allow it to enter into a preset pulse width scale, and said preset pulse width scale ranges from 1 us to 1 s.
27. The method for fabricating black silicon by using plasma immersion ion implantation of claim 22 , wherein said step (b) further comprises the following step: adjusting the frequency of said power supply which can apply a bias voltage to allow it to enter into a preset frequency scale of the power supply, and said preset frequency scale of the power supply ranges from DC to 10 GHz.
28. The method for fabricating black silicon by using plasma immersion ion implantation of claim 22 , wherein said step (b) further comprises the following step: adjusting the duty ratio of said power supply which can apply a bias voltage to allow it to enter into a preset duty ratio scale, and said preset duty ratio scale ranges from 1% to 99%.
29. The method for fabricating black silicon by using plasma immersion ion implantation of claim 22 , wherein said bias voltage consist of a variety of bias voltages and combination.
30. A method for fabricating black silicon by using plasma immersion ion implantation, wherein putting a silicon wafer into a black silicon fabrication apparatus, and using the plasma immersion ion implantation process to fabricate black silicon, wherein the method further comprises the pretreatment process of said silicon wafer before fabricating black silicon by using plasma immersion ion implantation, said pretreatment process includes such procedures as cleaning, polishing, doping, annealing, corrosion, etching or visualization.
31. A method for fabricating black silicon by using plasma immersion ion implantation, wherein putting a silicon wafer into a black silicon fabrication apparatus, and using the plasma immersion ion implantation process to fabricate black silicon, wherein the method further comprises the post-treatment process of said black silicon after fabricating black silicon by using plasma immersion ion implantation, said post-treatment process includes such procedures as cleaning, polishing, doping, annealing, corrosion, etching or visualization.
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July 26, 2010
April 22, 2014
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