A disclosed device having a principle axis and including a magnetoresistive stack, the magnetoresistive stack having first and second opposing surfaces, the magnetoresistive stack including a free layer, a spacer layer, and a reference layer, wherein the spacer layer is positioned between the first and reference layer, the free layer includes magnetic material having a free magnetic orientation in a first plane; the spacer layer includes nonmagnetic material; and the reference layer includes magnetic material having a pinned magnetic orientation in a second plane, wherein the second plane is perpendicular to the first plane and parallel to the principle axis of the device; an insulating layer at least a portion of the outer surface of the magnetoresistive stack; a shielding layer surrounding at least a portion of the insulating layer; and a conducting layer, wherein the conducting layer provides electrical connection between the magnetoresistive stack and the shielding layer.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A device, the device having an air bearing surface (ABS), and the device comprising: a magnetoresistive stack, the magnetoresistive stack comprising a free layer, a spacer layer, and a reference layer, wherein the spacer layer is positioned between the free and reference layers, wherein the free layer forms a first surface of the magnetoresistive stack and the reference layer forms a second surface of the magnetoresistive stack, the device having a principle axis, the principle axis running along the free layer, the spacer layer, and the reference layer, and through the first and second surfaces of the magnetoresistive stack, and wherein the first and second surfaces of the magnetoresistive stack are parallel to the ABS of the device, and the principle axis of the device is perpendicular to the ABS of the device; the free layer comprising a magnetic material having a free magnetic orientation in a first plane; the spacer layer comprising a nonmagnetic material; and the reference layer comprising a magnetic material having a pinned magnetic orientation in a second plane, wherein the second plane is perpendicular to the first plane and parallel to the principle axis of the device; an insulating layer positioned around the periphery of the magnetoresistive stack; a shielding layer positioned around the periphery of the insulating layer; and a conducting layer positioned adjacent the first surface of the magnetoresistive stack.
2. The device according to claim 1 , wherein the insulating layer surrounds all but the first and second surfaces of the magnetoresistive stack.
3. The device according to claim 1 , wherein the insulating layer surrounds all of an outer surface of the magnetoresistive stack.
4. The device according to claim 1 , wherein the conducting layer covers the entire first surface of the magnetoresistive stack.
5. The device according to claim 1 , wherein the conducting layer defines the ABS of the device.
6. The device according to claim 5 , wherein the conducting layer comprises a bi-layer of a conductive material and a diamond like overcoat.
7. The device according to claim 6 , wherein the conductive material comprises a conductive nonmetallic material.
8. The device according to claim 1 further comprising a current source.
9. The device according to claim 8 , wherein the current source is configured to drive current through the magnetoresistive stack from the first surface to the second surface or the second surface to the first surface.
10. The device according to claim 8 , wherein the current source is configured to drive current through the magnetoresistive stack to the conducting layer and then to the shielding layer or through the shielding layer to the conducting layer then through the magnetoresistive stack.
11. A device, the device having an air bearing surface (ABS), and the device comprising: a magnetic writer; and a magnetic reader, the magnetic reader comprising: a magnetoresistive stack, the magnetoresistive stack comprising a free layer, a spacer layer, and a reference layer, wherein the spacer layer is positioned between the free and reference layers, wherein the free layer forms a first surface of the magnetoresistive stack and the reference layer forms a second surface of the magnetoresistive stack, the device having a principle axis, the principle axis running along the free layer, the spacer layer, and the reference layer, and through the first and second surfaces of the magnetoresistive stack, and wherein the first and second surfaces of the magnetoresistive stack are parallel to the ABS of the device, and the principle axis of the device is perpendicular to the ABS of the device; the free layer comprising a magnetic material having a free magnetic orientation in a first plane; the spacer layer comprising a nonmagnetic material; and the reference layer comprising a magnetic material having a pinned magnetic orientation in a second plane, wherein the second plane is perpendicular to the first plane and parallel to the principle axis of the device; an insulating layer positioned around the periphery of the magnetoresistive stack; a shielding layer positioned around the periphery of the insulating layer; and a conducting layer positioned adjacent the first surface of the magnetoresistive stack.
12. The device according to claim 11 , wherein the insulating layer surrounds all but the first and second surfaces of the magnetoresistive stack.
13. The device according to claim 11 , wherein the conducting layer defines the ABS of the device.
14. The device according to claim 11 , wherein the conducting layer covers the entire first surface of the magnetoresistive stack.
15. The device according to claim 13 , wherein the conducting layer comprises a bi-layer of a conductive material and a diamond like overcoat.
16. The device according to claim 15 , wherein the conductive material comprises a conductive nonmetallic material.
17. The device according to claim 11 further comprising a current source.
18. The device according to claim 17 , wherein the current source is configured to drive current through the magnetoresistive stack from the first surface to the second surface or the second surface to the first surface.
19. The device according to claim 17 , wherein the current source is configured to drive current through the magnetoresistive stack to the conducting layer and then to the shielding layer or through the shielding layer to the conducting layer then through the magnetoresistive stack.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
February 26, 2010
April 22, 2014
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