Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device, comprising: a first substrate; a second substrate having a plurality of projections and a plurality of recesses, with individual recesses bounded by neighboring projections and having a closed end, at least one of the first and second substrates having a plurality of solid-state transducers, wherein individual solid-state transducers are disposed at least partially within corresponding recesses, and wherein the projections are directly adjacent to the first substrate; and a discontinuous bond between the first substrate and the second substrate, the discontinuous bond comprising a bonding material bonded to the second substrate at the closed end of the recesses, with the solid-state transducers disposed between the first substrate and the bonding material.
2. The semiconductor device of claim 1 wherein the plurality of recesses and the projections form a first pattern at the second substrate, and wherein the plurality of solid-state transducers and the bonding material form a second pattern, the second pattern being the inverse of the first pattern.
3. The semiconductor device of claim 2 wherein the bonding material comprises a bonding metal, and wherein the first pattern comprises a waffle pattern and the second pattern comprises an inverted waffle pattern.
4. The semiconductor device of claim 1 wherein the plurality of solid-state transducers comprise light-emitting diodes.
5. A bonded assembly, comprising: a first substrate carrying a transducer structure and a bonding material with the transducer structure disposed between the first substrate and the bonding material; and a second substrate, the second substrate having a series of projections forming a pattern, wherein the first substrate is bonded to the second substrate with a discontinuous bond in regions between the projections, and wherein the projections are directly adjacent to the first substrate.
6. The bonded assembly of claim 5 wherein the discontinuous bond comprises a series of sections of the bonding material bonded to the second substrate, separated by sections of the bonding material not bonded to the second substrate.
7. The bonded assembly of claim 5 wherein the bonding material comprises a bonding metal, and wherein the transducer structure comprises a light-emitting diode.
8. A semiconductor device, comprising: a first substrate carrying a bonding material and a plurality of solid-state transducers disposed between the first substrate and the bonding material; and a second substrate bonded to the first substrate with a discontinuous bond, the discontinuous bond comprising a plurality of spaced-apart bond segments, with individual bond segments including a portion of the bonding material bonded to both the solid-state transducers and to the second substrate, and wherein at least a portion of the first substrate is positioned directly adjacent to a portion of the second substrate.
9. A semiconductor device, comprising: a first substrate carrying a bonding material and a plurality of solid-state transducers disposed between the first substrate and the bonding material; and a second substrate bonded to the first substrate with a discontinuous bond, the discontinuous bond comprising a plurality of spaced-apart bond segments, with individual bond segments including a portion of the bonding material bonded to both the solid-state transducers and to the second substrate, wherein the second substrate includes projections that at least partially define a plurality of regions in the second substrate, wherein individual regions are partially occupied by the bonding material and partially occupied by one of the plurality of solid-state transducers, wherein the projections form a grid pattern of streets between neighboring solid-state transducers, and wherein the projections are directly adjacent to the first substrate.
10. The semiconductor device of claim 8 wherein the individual bond segments are separated by sections of void space defined at least partially by a gap between neighboring solid-state transducers.
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August 29, 2011
June 17, 2014
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