Methods, algorithms, processes, circuits, and/or structures for laser patterning suitable for customized RFID designs are disclosed. In one embodiment, a method of laser patterning of an identification device can include the steps of: (i) depositing a patternable resist formulation on a substrate having configurable elements and/or materials thereon; (ii) irradiating the resist formulation with a laser tool sufficiently to change the solubility characteristics of the resist in a developer; and (iii) developing exposed areas of the resist using the developer. Embodiments of the present invention can advantageously provide a relatively low cost and high throughput approach for customized RFID devices.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of customizing a plurality of identification devices, each of the plurality of identification devices having a metal layer, a dielectric layer, and a semiconductor layer on a substrate, the method comprising: a) forming, on a first one of said plurality of identification devices, a first pattern in a material selected from the group consisting of said metal layer, said dielectric layer, and said semiconductor layer using laser patterning; b) forming a different pattern in a same material in which said first pattern is formed on a next one of said plurality of identification devices using laser patterning; c) repeating step (b) such that at least a majority of said plurality of identification devices contains a unique pattern in said same material in which said first pattern is formed, wherein said first pattern, said different pattern and said unique pattern encode a bit string or signal pattern; and d) attaching each of the plurality of identification devices to antennae, or forming antennae in the substrates, wherein each of the plurality of identification devices are configured to receive a first wireless signal, demodulate said first wireless signal, perform control and readout functions, modulate a second wireless signal and broadcast said second wireless signal.
2. The method of claim 1 , wherein laser patterning said material and laser patterning said same material comprise forming a unique via pattern in said dielectric layer on each of said majority of said identification devices.
3. The method of claim 2 , wherein the dielectric layer comprises a photopatternable dielectric.
4. The method of claim 3 , wherein the photopatternable dielectric comprises a curable dielectric material and a light-absorbing dye therein.
5. The method of claim 4 , wherein the light-absorbing dye absorbs a wavelength of light in the visible or infrared spectrum, and said pattern and said different pattern are each laser patterned using a laser that emits said wavelength of light.
6. The method of claim 1 , wherein laser patterning said material and laser patterning said same layer material comprise laser patterning a unique metal pattern on each of said majority of said identification devices.
7. The method of claim 6 , wherein laser patterning the unique metal patterns comprises irradiating a photopatternable metal precursor with a laser sufficiently to change the solubility characteristics of said photopatternable metal precursor in a developer.
8. The method of claim 7 , wherein said photopatternable metal precursor comprises metal nanoparticles and/or an organometallic compound, and said method further comprises the step of depositing a dye on said photopatternable metal precursor before laser patterning.
9. The method of claim 7 , further comprising depositing a nanoparticle precursor ink on a substrate, the nanoparticle precursor ink comprising about 0.1 to 40 wt. % of metal nanoparticles in a solvent.
10. The method of claim 9 , wherein the metal nanoparticles comprise Ag, Al, Pd, Rh, Cu, Pt, Ni, Fe, Ru, Os, Mn, Cr, Mo, Au, W, Co, Ti, Ir, Zn, and/or Cd.
11. The method of claim 9 , wherein the nanoparticle precursor ink comprise one or more surfactants.
12. The method of claim 11 , wherein the one or more surfactants are selected from the group consisting of thiols, carboxylic acids, amines, ethers, phosphines, and phosphine oxides.
13. The method of claim 7 , wherein changing the solubility characteristics of the metal precursor comprises (a) converting the metal precursor to metal in the irradiated areas by fusing metal nanoparticles and/or decomposing an organometallic compound; (b) crosslinking the metal precursor; or (c) decomposing a protective group or dissolution inhibitor in the metal precursor by absorbed energy.
14. The method of claim 7 , wherein said photopatternable metal precursor film further contains an additive that increases sensitivity of the metal precursor film to metal formation upon laser irradiation, reduces the laser power for said patterning, and/or increases throughput of the method.
15. The method of claim 14 , wherein the additive comprises a Sn-based or a Ni-based additive, surfactant, and/or sensitizer.
16. The method of claim 15 , wherein the additive comprises Sn or Ni ethylhexanoate.
17. The method of claim 16 , wherein the additive comprises 0.5 wt. % of Sn ethylhexanoate.
18. The method of claim 1 , wherein said plurality of identification devices comprises radio frequency identification devices (RFIDs).
19. The method of claim 1 , wherein laser patterning said material and laser patterning said same material comprises laser resist patterning, interlayer dielectric laser patterning, and/or laser direct-writing.
20. The method of claim 1 , further comprising (i) identifying said material to be uniquely patterned for each identification device in the plurality of identification devices, and (ii) selectively laser patterning material.
21. The method of claim 20 , wherein laser patterning comprises laser resist patterning, and the material to be uniquely patterned does not change solubility characteristics upon laser irradiation.
22. The method of claim 20 , wherein laser patterning comprises interlayer dielectric laser patterning, the material to be uniquely patterned comprises said dielectric layer, and said dielectric layer changes solubility characteristics upon laser irradiation.
23. The method of claim 20 , wherein laser patterning comprises laser direct-writing, and the material to be uniquely patterned comprises a metal or other conductor that changes solubility characteristics upon laser irradiation.
24. The method of claim 1 , wherein each of the plurality of identification devices has a unique pattern formed thereon by laser patterning, and the unique pattern is configured to provide a unique identifier.
25. The method of claim 24 , wherein the unique identifier comprises a local security key, the local security key comprising a predetermined bit string that is unique to a particular identification device.
26. The method of claim 25 , wherein the local security key is derived with a cryptological algorithm and a user-defined master key.
27. The method of claim 26 , wherein the local security key is linked to an identification number of a particular identification device and to the master key.
28. The method of claim 1 , wherein laser patterning the material and laser patterning the same material comprise laser patterning a semiconductor layer on each of the majority of the identification devices.
29. The method of claim 28 , further comprising depositing one or more semiconductor precursor layers on said substrate from a semiconductor precursor ink comprising silicon and/or germanium nanoparticles, a liquid-phase silane or germane, and/or a silagermane in a solvent.
30. The method of claim 29 , wherein the semiconductor precursor ink comprises doped and/or undoped silicon or silicon-germanium.
31. The method of claim 29 , wherein the semiconductor precursor ink comprises a cycloalkane.
32. The method of claim 1 , wherein each of the plurality of identification devices has a length of from 2 to 20 mm and a width of from 5 to 20 mm.
33. The method of claim 1 , wherein each of the plurality of identification devices has an area of from 10 to 50 mm 2 .
34. The method of claim 1 , wherein the plurality of identification devices are each one of the group consisting of an electronic article surveillance (EAS) device, a radio frequency (RF) device, a high frequency (HF) device, and an ultra high frequency (UHF) device.
35. The method of claim 1 , wherein laser patterning said material comprises depositing a laser-patternable resist on said material, irradiating the laser-patternable resist with a laser sufficiently to change solubility characteristics of the laser-patternable resist, and developing areas of the laser-patternable resist.
36. The method of claim 35 , wherein laser patterning said material further comprises etching said material.
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November 8, 2006
June 24, 2014
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