The display device including a pixel circuit has a first line, a transistor, a light emitting element, and a second line. The transistor is located between the second line and an electrode of the light emitting element. Either the first line or the second line is wired in a region that overlaps a light emitting region of the light emitting element in a lamination direction of layers. The second line intersects the first line outside of the light emitting region and overlaps a non-light emitting region of the light emitting element.
Legal claims defining the scope of protection, as filed with the USPTO.
1. An imaging device comprising an imaging region having a plurality of pixel units on a substrate, each of the pixel units including an organic layer having electrical conductivity and an active element capable of controlling a current flow, the active element including a channel portion and a control portion, wherein the imaging region comprising: a semiconductor layer made of a semiconductor material, the semiconductor layer comprising the channel portion, a first terminal portion and a second terminal portion; a first conductor layer made of a first material, and the first conductor layer comprising the control portion for the active element; a second conductor layer made of a second material, and the second conductor layer comprising at least two conductive portions, each of the at least two conductive potions are arranged independently from each other; and a third conductor layer made of a third material, and the third conductor layer comprising a potential supply wiring and a current supply electrode portion for the organic layer, and the current supply electrode portion is arranged independently from the potential supply wiring, the channel portion, the first terminal portion and the second terminal portion are formed as a continuous layer of the first conductor layer, the first terminal portion is electrically connected to the potential supply wiring via a first contact group, the first contact group comprising two contact regions for connecting a first conductive portion of the at least two conductive portions, to potential supply wiring, and to the first terminal portion respectively, the second terminal portion is electrically connected to the current supply electrode portion via a second contact group, the second contact group comprising two contact regions for connecting a second conductive portion of the at least two conductive portions, to the current supply electrode portion, and to the second terminal portion respectively, and the two contact regions of at least one of the first contact group and the second contact regions are at least partially overlapping each other.
2. The imaging device according to claim 1 , wherein the first material includes molybdenum, the second material includes aluminum, and the third material includes silver.
3. The imaging device according to claim 1 , wherein the semiconductor material includes poly-silicone.
4. The imaging device according to claim 1 , wherein the organic layer comprise a light emitting organic material which is capable of emitting light in response to a current supply, and the active element is a thin film transistor capable of controlling the current supply.
5. The imaging device according to claim 4 , wherein the first terminal portion and the second terminal portion are respectively corresponding to a source and a drain electrode of the thin film transistor.
6. The imaging device according to claim 1 , wherein the imaging region further comprising a forth conductor layer made of a forth material, the forth conductor layer comprising an upper electrode disposed adjacent to the organic layer.
7. The imaging device according to claim 6 , wherein the forth material including silver.
8. The imaging device according to claim 6 , wherein the organic layer having diode characteristic, and the upper electrode being an anode electrode for the organic layer.
9. The imaging device according to claim 1 , wherein the organic layer having diode characteristic, and wherein the current supply electrode portion is disposed adjacent to the organic layer and being an anode electrode for the organic layer.
10. The imaging device according to claim 9 , wherein the imaging region further comprising a fifth conductor layer made of a fifth material, and the fifth conductor layer comprising a common electrode which is a common cathode electrode of the organic layer in each of the pixel units.
11. The imaging device according to claim 9 , wherein the imaging region further comprising a fifth conductor layer made of a fifth material, and the fifth conductor layer comprising a common electrode which is a common cathode electrode of the organic layer in each of the pixel units.
12. The imaging device according to claim 1 , wherein the two contact regions of the first contact group are overlapping each other, and the two contact regions the second contact regions are overlapping each other.
13. The imaging device according to claim 1 , wherein at least one of the first conductive portion and the second conductive portion is at least partially overlapping the first conductor layer.
14. The imaging device according to claim 1 , wherein the both of the first conductive portion and the second conductive portion are respectively at least partially overlapping the first conductor layer.
15. An electronic device having a multi-layered structure on a substrate, the multi-layered structure comprising: a semiconductor layer made of a semiconductor material, and the semiconductor layer comprising a channel portion, a first terminal portion and a second terminal portion; a first conductor layer made of a first material, the first layer comprising a control portion, a second conductor layer made of a second material, and the second conductor layer comprising at least two conductive portions, each of the at least two conductive potions are arranged independently from each other; a third conductor layer made of a third material, the third conductor layer comprising a potential supply wiring and a current supply electrode portion for the organic layer, and the current supply electrode portion are arranged independently from the potential supply wiring; and an organic layer made of an organic material having conductivity, wherein the control portion and the channel portion form an active element capable of controlling a current flow for the organic layer, the channel portion, the first terminal portion and the second terminal portion are formed as a continuous layer of the first conductor layer, the first terminal portion is electrically connected to the potential supply wiring via a first contact group, the first contact group comprising two contact regions for connecting one of the at least two conductive potions, to potential supply wiring, and to the first terminal portion respectively, the second terminal portion is electrically connected to the current supply electrode portion via a second contact group, the second contact group comprising two contact regions for connecting another one of the at least two conductive potions, to the current supply electrode portion, and to the second terminal portion respectively, and the two contact regions of at least one of the first contact group and the second contact regions are at least partially overlapping each other.
16. The electronic device according to claim 11 , wherein the first material includes molybdenum, the second material includes aluminum, and the third material includes silver.
17. The electronic device according to claim 11 , wherein the organic layer comprise a light emitting organic material which is capable of emitting light in response to a current supply, and the active element is a thin film transistor capable of controlling the current supply.
18. A multi-layered structure for driving an electro-optical element, the multi-layered structure comprising: a semiconductor layer made of a semiconductor material, and the semiconductor layer comprising a channel portion, a first terminal portion and a second terminal portion; a first conductor layer made of a first material, the first layer comprising a control portion, a second conductor layer made of a second material, and the second conductor layer comprising at least two conductive portions, each of the at least two conductive portions are arranged independently from each other; a third conductor layer made of a third material, the third conductor layer comprising a potential supply wiring and a current supply electrode portion for the organic layer, and the current supply electrode portion are arranged independently from the potential supply wiring; an organic layer made of an organic material having conductivity, the organic layer comprising the electro-optical element; a gate insulator layer formed between the semiconductor layer and the first conductor layer; a first insulating layer formed between the first conductor layer and the second conductor layer; a second insulating layer formed between the second conductor layer and the third conductor layer; wherein the control portion and the channel portion form an active element capable of controlling a current flow for the organic layer, the channel portion, the first terminal portion and the second terminal portion are formed as a continuous layer of the first conductor layer, the first terminal portion is electrically connected to the potential supply wiring via a first contact group, the first contact group comprising two contact regions for connecting one of the at least two conductive portions, to potential supply wiring, and to the first terminal portion respectively, the second terminal portion is electrically connected to the current supply electrode portion via a second contact group, the second contact group comprising two contact regions for connecting another one of the at least two conductive portions, to the current supply electrode portion, and to the second terminal portion respectively, and the two contact regions of at least one of the first contact group and the second contact regions are at least partially overlapping each other.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
November 1, 2012
June 24, 2014
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.