Provided are a composition for an oxide semiconductor, a method of preparing the composition, methods of forming an oxide semiconductor thin film and an electronic device using the composition. The composition for an oxide semiconductor includes a tin compound, a zinc compound, and a low electronegativity metal compound containing a metal with an electronegativity lower than zinc.
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1. A composition for an oxide film, comprising: a first compound containing tin; a second compound containing zinc; and a third compound containing zirconium, wherein a total of the first compound, the second compound, and the third compound is in a range of about 0.01 M to about 1 M, a molar ratio of the first compound to the second compound is in a range of about 1:0.1 to about 0.1:1, and the number of moles of the third compound is half of the total number of moles of the first compound and the second compound.
2. The composition of claim 1 , wherein a molar ratio of the first compound:the second compound:the third compound is in a range of about 7:4:0.1 to about 7:4:1.
3. The composition of claim 1 , wherein the molar ratio of the first compound:the second compound:the third compound is in a range of about 7:4:0.3 to about 7:4:0.5.
4. The composition of claim 1 , wherein the zirconium compound comprises zirconium acetate, zirconium nitrate, zirconium(II) hydride, zirconium(IV) acetate hydroxide, zirconium(IV) acetylacetonate, zirconium(IV) butoxide solution, zirconium(IV) carbide, zirconium(IV) chloride, zirconium(IV) ethoxide, zirconium(IV) fluoride, zirconium(IV) fluoride hydrate, zirconium(IV) hydroxide, zirconium(IV) iodide, zirconium(IV) sulfate hydrate, zirconium(IV) tert-butoxide, or combinations thereof.
5. The composition of claim 1 , wherein the first compound comprises tin(II) chloride, tin(II) iodide, tin(II) chloride dihydrate, tin(II) bromide, tin(II) fluoride, tin(II) oxalate, tin(II) sulfide, tin(II) acetate, tin(IV) chloride, tin(IV) chloride pentahydrate, tin(IV) fluoride, tin(IV) iodide, tin(IV) sulfide, tin(IV) tert-butoxide, or combinations thereof.
6. The composition of claim 5 , wherein the third compound comprises zirconium acetate, zirconium nitrate, zirconium(II) hydride, zirconium(IV) acetate hydroxide, zirconium(IV) acetylacetonate, zirconium(IV) butoxide solution, zirconium(IV) carbide, zirconium(IV) chloride, zirconium(IV) ethoxide, zirconium(IV) fluoride, zirconium(IV) fluoride hydrate, zirconium(IV) hydroxide, zirconium(IV) iodide, zirconium(IV) sulfate hydrate, zirconium(IV) tert-butoxide, or combinations thereof.
7. The composition of claim 1 , wherein the second compound comprises zinc citrate dihydrate, zinc acetate, zinc acetate dihydrate, zinc acetylacetonate hydrate, zinc acrylate, zinc chloride, zinc diethyldithiocarbamate, zinc dimethyldithiocarbamate, zinc fluoride, zinc fluoride hydrate, zinc hexafluoroacetylacetonate dihydrate, zinc methacrylate, zinc nitrate hexahydrate, zinc nitrate hydrate, zinc trifluoromethanesulfonate, zinc undecylenate, zinc trifluoroacetate hydrate, zinc tetrafluoroborate hydrate, zinc perchlorate hexahydrate, or combinations thereof.
8. The composition for an oxide thin film of claim 7 , wherein the third compound comprises zirconium acetate, zirconium nitrate, zirconium(II) hydride, zirconium(IV) acetate hydroxide, zirconium(IV) acetylacetonate, zirconium(IV) butoxide solution, zirconium(IV) carbide, zirconium(IV) chloride, zirconium(IV) ethoxide, zirconium(IV) fluoride, zirconium(IV) fluoride hydrate, zirconium(IV) hydroxide, zirconium(IV) iodide, zirconium(IV) sulfate hydrate, zirconium(IV) tert-butoxide, or combinations thereof.
9. The composition of claim 1 , wherein the first compound, the second compound and the third compound are dissolved in at least one of solvents selected from the group consisting of isopropanol, 2-methoxyethanol, dimethylformamide, ethanol, deionized water, methanol, acetylacetone, dimethylamineborane, and acetonitrile.
10. A composition for an oxide film, comprising: a tin compound, a zinc compound, and a compound with an electronegativity lower than zinc, wherein a total of the tin compound, the zinc compound and the compound with an electronegativity lower than zinc is in a range of about 0.01 M to about 1 M, wherein a molar ratio of the tin compound to the zinc compound is in a range of about 1:0.1 to about 0.1:1, and the number of moles of the compound with an electronegativity lower than zinc is half of the total number of moles of the tin compound and the zinc compound.
11. The composition of claim 10 , wherein the tin compound comprises tin(II) chloride, tin(II) iodide, tin(II) chloride dihydrate, tin(II) bromide, tin(II) fluoride, tin(II) oxalate, tin(II) sulfide, tin(II) acetate, tin(IV) chloride, tin(IV) chloride pentahydrate, tin(IV) fluoride, tin(IV) iodide, tin(IV) sulfide, tin(IV) tert-butoxide, or combinations thereof.
12. The composition of claim 10 , wherein the zinc compound comprises zinc citrate dihydrate, zinc acetate, zinc acetate dihydrate, zinc acetylacetonate hydrate, zinc acrylate, zinc chloride, zinc diethyldithiocarbamate, zinc dimethyldithiocarbamate, zinc fluoride, zinc fluoride hydrate, zinc hexafluoroacetylacetonate dihydrate, zinc methacrylate, zinc nitrate hexahydrate, zinc nitrate hydrate, zinc trifluoromethanesulfonate, zinc undecylenate, zinc trifluoroacetate hydrate, zinc tetrafluoroborate hydrate, zinc perchlorate hexahydrate, or combinations thereof.
13. The composition of claim 10 , wherein the compound with an electronegativity lower than zinc is a zirconium compound selected from zirconium acetate, zirconium nitrate, zirconium(II) hydride, zirconium(IV) acetate hydroxide, zirconium(IV) acetylacetonate, zirconium(IV) butoxide solution, zirconium(IV) carbide, zirconium(IV) chloride, zirconium(IV) ethoxide, zirconium(IV) fluoride, zirconium(IV) fluoride hydrate, zirconium(IV) hydroxide, zirconium(IV) iodide, zirconium(IV) sulfate hydrate, zirconium(IV) tert-butoxide, or combinations thereof.
14. The composition of claim 10 , wherein the compound with an electronegativity lower than zinc is an aluminum compound selected from aluminum acetate, aluminum acetylacetonate, aluminum borate, aluminum bromide, aluminum carbide, aluminum chloride, aluminum chloride hexahydrate, aluminum chloride hydrate, aluminum ethoxide, aluminum fluoride, aluminum hydroxide hydrate, aluminum iodide, aluminum isopropoxide, aluminum nitrate nonahydrate, aluminum nitride, aluminum phosphate, aluminum sulfate, aluminum sulfate hexadecahydrate, aluminum sulfate hydrate, aluminum tert-butoxide, or combinations thereof.
15. The composition of claim 10 , wherein the compound with an electronegativity lower than zinc is a gallium compound selected from gallium nitride, gallium phosphide, gallium(II) chloride, gallium(III) acetylacetonate, gallium(III) bromide, gallium(III) chloride, gallium(III) fluoride, gallium(III) iodide, gallium(III) nitrate hydrate, gallium(III) sulfate, gallium(III) sulfate hydrate, or combinations thereof.
16. The composition of claim 10 , wherein the compound with an electronegativity lower than zinc is a neodymium compound selected from neodymium(II) iodide, neodymium(III) acetate hydrate, neodymium(III) acetylacetonate hydrate, neodymium(III) bromide, neodymium(III) bromide hydrate, neodymium(III) carbonate hydrate, neodymium(III) chloride, neodymium(III) chloride hexahydrate, neodymium(III) fluoride, neodymium(III) hydroxide hydrate, neodymium(III) iodide, neodymium(III) isopropoxide, neodymium(III) nitrate hexahydrate, neodymium(III) nitrate hydrate, neodymium(III) oxalate hydrate, neodymium(III) phosphate hydrate, neodymium(III) sulfate, neodymium(III) sulfate hydrate, or combinations thereof.
17. The composition of claim 10 , wherein the compound with an electronegativity lower than zinc is a tantalum compound selected from tantalum bromide, tantalum chloride, tantalum fluoride, or combinations thereof.
18. The composition of claim 10 , wherein the compound with an electronegativity lower than zinc is a titanium compound selected from titanium bromide, titanium chloride, titanium fluoride, or combinations thereof.
19. The composition of claim 10 , wherein the compound with an electronegativity lower than zinc is a barium compound selected from barium acetate, barium acetylacetonate, barium bromide, barium chloride, barium fluoride, barium hexafluoacetylacetonate, barium hydroxide, barium nitrate, or combinations thereof.
20. The composition of claim 10 , wherein the compound with an electronegativity lower than zinc is a lanthanum compound selected from lanthanum acetate, lanthanum acetylacetonate, lanthanum bromide, lanthanum chloride, lanthanum hydroxide, lanthanum fluoride, lanthanum nitrate, or combinations thereof.
21. The composition of claim 10 , wherein the compound with an electronegativity lower than zinc is a manganese compound selected from manganese acetate, manganese acetylacetonate, manganese bromide, manganese chloride, manganese fluoride, manganese nitrate, or combinations thereof.
22. The composition of claim 10 , wherein the compound with an electronegativity lower than zinc is a chromium compound selected from chromium acetate, chromium acetylacetonate, chromium bromide, chromium chloride, chromium fluoride, chromium nitrate, or combinations thereof.
23. The composition of claim 10 , wherein the compound with an electronegativity lower than zinc is a strontium compound selected from strontium acetate, strontium acetylacetonate, strontium bromide, strontium chloride, strontium fluoride, strontium hydroxide, strontium nitrate, or combinations thereof.
24. The composition of claim 10 , wherein the compound with an electronegativity lower than zinc is a yttrium compound selected from yttrium acetate, yttrium acetylacetonate, yttrium chloride, yttrium fluoride, yttrium nitrate, or combinations thereof.
25. The composition of claim 10 , wherein the compound with an electronegativity lower than zinc is a cerium compound selected from cerium(III) acetate hydrate, cerium(III) acetylacetonate hydrate, cerium(III) bromide, cerium(III) carbonate hydrate, cerium(III) chloride, cerium(III) chloride heptahydrate, cerium(III) fluoride, cerium(III) iodide, cerium(III) nitrate hexahydrate, cerium(III) oxalate hydrate, cerium(III) sulfate, cerium(III) sulfate hydrate, cerium(III) sulfate octahydrate, cerium(IV) fluoride, cerium(IV) hydroxide, cerium(IV) sulfate, cerium(IV) sulfate hydrate, cerium(IV) sulfate tetrahydrate, or combinations thereof.
26. The composition of claim 10 , wherein a molar ratio of the tin compound:the zinc compound:the compound with an electronegativity lower than zinc is in a range of about 7:4:0.1 to about 7:4:1.
27. The composition of claim 26 , wherein the molar ratio of the tin compound:the zinc compound:the compound with an electronegativity lower than zinc is in a range of about 7:4:0.3 to about 7:4:0.5.
28. An electronic device comprising an oxide semiconductor film, the oxide semiconductor film comprising tin, zinc, and a low electronegativity metal with an electronegativity lower than zinc wherein an atomic number ratio of the tin to the zinc is in a range of about 1:0.1 to about 0.1:1, and wherein the oxide semiconductor film comprises the low electronegativity metal within a half of a total sum of the atomic numbers of the tin and the zinc.
29. The electronic device of claim 28 , wherein the atomic number ratio between the tin, the zinc and the metal is in a range of about 7:4:0.1 to about 7:4:1.
30. The electronic device of claim 28 , wherein the low electronegativity metal comprises zirconium, aluminum, gallium, neodymium, chromium, cerium, yttrium, tantalum, titanium, barium, lanthanum, manganese, strontium, or combinations thereof.
31. The electronic device of claim 30 , further comprising: a gate electrode spaced apart from and overlapping the oxide semiconductor film; a source electrode electrically connected to the oxide semiconductor film and disposed at one end of the gate electrode; and a drain electrode electrically connected to the oxide semiconductor film and disposed at the other end of the gate electrode.
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May 24, 2011
July 1, 2014
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