Light emitting diode package

1. A light emitting diode package comprising: a package body comprising a cavity; a light emitting diode chip comprising a plurality of light emitting cells connected in series to one another; a phosphor to convert a frequency of light emitted from the light emitting diode chip; a pair of lead electrodes; and landing pads spaced apart from each other on a bottom surface of the cavity, wherein the light emitting cells are connected in series between the pair of lead electrodes, wherein the light emitting diode chip is disposed on a landing pad among the landing pads, wherein at least two landing pads are disposed on the bottom surface of the cavity, and wherein the package body comprises a lower dielectric substrate, an upper dielectric substrate stacked on the lower dielectric substrate, upper conductive patterns disposed on an upper surface of the upper dielectric substrate, middle conductive patterns disposed between the upper and lower dielectric substrates to be connected to the upper conductive patterns through upper vias, and lower conductive patterns disposed on a lower surface of the lower dielectric substrate to be connected to the middle conductive patterns through lower vias.

2. The light emitting diode package of claim 1 , further comprising: bonding pads separated from the landing pads and comprising wires bonded to the bonding pads.

3. The light emitting diode package of claim 2 , wherein two of the bonding pads are connected to the pair of lead electrodes, respectively.

4. The light emitting diode package of claim 3 , further comprising: Zener diodes mounted on the two bonding pads, respectively, wherein the Zener diodes are connected with opposite polarities in parallel to the light emitting diode chip.

5. The light emitting diode package of claim 1 , wherein the landing pads comprise a metallic material having high reflectivity.

6. The light emitting diode package of claim 1 , further comprising: at least one light emitting diode chip to emit light having a different frequency from the light emitted from the light emitting diode chip comprising the plurality of light emitting cells; and a molding portion covering the light emitting diode chip comprising the plurality of light emitting cells and the at least one light emitting diode chip, wherein the phosphor is distributed in the molding portion.

7. The light emitting diode package of claim 6 , wherein the light emitting diode chip comprising the plurality of light emitting cells is configured to emit blue light, and the at least one light emitting diode chip is configured to emit red light.

8. The light emitting diode package of claim 1 , wherein the cavity comprises a first cavity and a second cavity with a step formed therebetween.

9. The light emitting diode package of claim 8 , further comprising: a molding portion covering the light emitting diode chips in the first cavity; a lens bonding agent disposed on a bottom surface of the second cavity and the molding portion; and a lens bonded to the package body by the lens bonding agent.

10. The light emitting diode package of claim 9 , wherein the phosphor is distributed in the molding portion.

11. The light emitting diode package of claim 9 , wherein the molding portion comprises a gel-type silicone and the lens bonding agent comprises a high hardness silicone having a Durometer Shore hardness of 60 or more.

12. The light emitting diode package of claim 9 , wherein the lens is a glass lens.

13. The light emitting diode package of claim 1 , wherein the package body comprises a package lower part comprising a stack structure of substrates and a package upper part stacked on the package lower part and comprising the cavity formed therein, and wherein the lead electrodes are electrically connected to conductive patterns disposed between the package upper part and the package lower part and extend to a lower surface of the package body through a side surface of the package body.

14. The light emitting diode package of claim 1 , wherein the package body comprises grooves formed on a side periphery of the package body, and each of the lead electrodes extends to the lower surface of the package body along each groove.

15. The light emitting diode package of claim 14 , wherein the grooves are disposed on side corners of the package body.

16. The light emitting diode package of claim 14 , wherein the package lower part comprises ceramic substrates stacked in two or more layers, and the lead electrodes fixedly surround the ceramic substrates stacked in two or more layers.

17. The light emitting diode package of claim 14 , wherein the package lower part comprises the pair of lead electrodes, which are separated from each other and comprises a wide area on the lower surface of the package lower part, and a metallic heat-dissipating portion is disposed between the lead electrodes on the lower surface thereof.

18. The light emitting diode package of claim 1 , wherein heat sink patterns for heat dissipation are disposed between the upper and lower dielectric substrates and on the lower surface of the lower dielectric substrate, and are connected to each other through a heat transfer via penetrating the lower dielectric substrate.