Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. An electrode is on a bottom surface of the light emitting structure and an electrode layer and a conductive support member are disposed on the top surface of the light emitting structure. A recess is recessed from a top surface of the light emitting structure. A transmittive layer is between the light emitting structure and the electrode layer. The transmittive layer includes a first portion having a protrusion disposed in the recess.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first and second semiconductor layers; a first electrode layer disposed on a top surface of the first conductive semiconductor layer; a conductive support member disposed under a bottom surface of the second conductive semiconductor layer; a second electrode layer disposed between the second conductive semiconductor layer and the conductive support member; a protective layer disposed between the second conductive semiconductor layer and the second electrode layer; a plurality of recesses recessed in a direction toward the active layer from the second conductive semiconductor layer; and a conductive layer including a plurality of contact portions spaced from each other between the second electrode layer and the second conductive semiconductor layer, wherein the plurality of contact portions contact a different regions of the second conductive semiconductor layer, wherein the protective layer includes an insulating material, wherein the protective layer includes a plurality of protrusions extended into the plurality of recesses, wherein the plurality of protrusions contact the second conductive semiconductor layer and are overlapped with the second electrode layer, wherein the plurality of protrusions are disposed to be closer to an outer sidewall of the light emitting structure than to the plurality of contact portions, and wherein the protective layer includes a first portion overlapped with the light emitting structure and a second portion being not overlapped with the light emitting structure.
2. The semiconductor light emitting device of claim 1 , wherein the second portion of the protective layer is overlapped with the second electrode layer.
3. The semiconductor light emitting device of claim 2 , wherein the second portion of the protective layer is overlapped with the conductive support member.
4. The semiconductor light emitting device of claim 1 , wherein at least one of the plurality of protrusions is not overlapped with the first electrode layer.
5. The semiconductor light emitting device of claim 4 , wherein the plurality of contact portions is not overlapped with a region of the first electrode layer.
6. The semiconductor light emitting device of claim 1 , wherein each of the plurality of recesses has an inlet region greater than an inside region, and wherein each of the plurality of recesses has an inclined side surface.
7. The semiconductor light emitting device of claim 1 , wherein each of the plurality of recesses has a depth smaller than a thickness of the second conductive semiconductor layer.
8. The semiconductor light emitting device of claim 1 , wherein each of the plurality of protrusions has a height smaller than a thickness of the second conductive semiconductor layer.
9. The semiconductor light emitting device of claim 1 , wherein the plurality of recesses are disposed at a peripheral region of the bottom surface of the second conductive semiconductor layer.
10. The semiconductor light emitting device of claim 1 , wherein the plurality of recesses are irregularly spaced apart from each other.
11. The semiconductor light emitting device of claim 1 , wherein the second electrode layer includes a convex portion protruded in a direction toward the active layer.
12. The semiconductor light emitting device of claim 1 , wherein the second electrode layer has a width wider than that of a bottom surface of the light emitting structure, wherein the conductive support member has a width wider than that of the bottom surface of the light emitting structure.
13. A semiconductor light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first and second semiconductor layers; a first electrode layer disposed on a top surface of the first conductive semiconductor layer; a conductive support member disposed under a bottom surface of the second conductive semiconductor layer; a second electrode layer including a reflective layer between the second conductive semiconductor layer and the conductive support member; a protective layer disposed between the second conductive semiconductor layer and the second electrode layer; a plurality of recesses recessed in a direction toward the active layer from the second conductive semiconductor layer; and a conductive layer including a plurality of contact portions spaced from each other between the second electrode layer and the second conductive semiconductor layer, wherein the plurality of contact portions contact a different regions of the second conductive semiconductor layer, wherein the protective layer includes an insulating material, wherein the protective layer includes a plurality of protrusions extended into the plurality of recesses, wherein the plurality of protrusions contact the second conductive semiconductor layer and are overlapped with the second electrode layer, wherein the plurality of protrusions are disposed to be closer to an outer sidewall of the light emitting structure than to the plurality of contact portions, and wherein the protective layer includes a first portion overlapped with the light emitting structure and a second portion being not overlapped with the light emitting structure, wherein the plurality of recesses is formed in three or more, wherein the plurality of protrusions includes an insulating material.
14. The semiconductor light emitting device of claim 13 , wherein the plurality of contact portions of the second electrode layer is directly contacted with the second conductive semiconductor layer.
15. The semiconductor light emitting device of claim 14 , wherein the first conductive semiconductor layer is an n type semiconductor layer and the second conductive semiconductor layer is a p type semiconductor layer.
16. The semiconductor light emitting device of claim 13 , wherein the plurality of protrusions of the protective layer includes a height of about 10 nm to about 300 nm.
17. The semiconductor light emitting device of claim 13 , wherein the plurality of protrusions of the protective is spaced apart from the outer sidewall of the light emitting structure by a distance about 1 μm to about 5 μm.
18. The semiconductor light emitting device of claim 13 , wherein the second portion of the protective layer is overlapped with the second electrode layer.
19. The semiconductor light emitting device of claim 18 , wherein the second portion of the protective layer is overlapped with the conductive support member.
20. The semiconductor light emitting device of claim 19 , wherein at least one of the plurality of protrusions is not overlapped with the first electrode layer, and wherein at least one of the plurality of contact portions is not overlapped with the first electrode layer.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
November 19, 2013
August 5, 2014
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