A photodetector circuit is provided that includes: a first wiring connected to an input terminal; a second wiring connected to an output terminal; and first and second photosensors each including a first terminal connected to the first wiring and a second terminal connected to the second wiring, wherein the first wiring and the second wiring are arranged in parallel, and the sum of resistance values of a first path from the input terminal to the output terminal via the first wiring, the first photosensor, and the second wiring is identical to the sum of resistance values of a second path from the input terminal to the output terminal via the first wiring, the second photosensor, and the second wiring.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device having a photodetector circuit, the photodetector circuit comprising: a first wiring directly connected to an input terminal; a second wiring directly connected to an output terminal; and first and second photosensors each including a first terminal directly connected to the first wiring and a second terminal directly connected to the second wiring, wherein the first wiring and the second wiring are arranged in parallel, and wherein the sum of resistance values of a first path from the input terminal to the output terminal via the first wiring, the first photosensor, and the second wiring is identical to the sum of resistance values of a second path from the input terminal to the output terminal via the first wiring, the second photosensor, and the second wiring.
2. The semiconductor device according to claim 1 , wherein the first wiring and the second wiring are formed of a same conductive material and have a same width.
3. The semiconductor device according to claim 1 , wherein the input terminal and the output terminal are connected to a control circuit.
4. The semiconductor device according to claim 2 , wherein the input terminal and the output terminal are connected to a control circuit.
5. The semiconductor device according to claim 1 , wherein each of the first and second photosensors includes a thin film transistor comprising an oxide semiconductor layer.
6. The semiconductor device according to claim 5 , wherein the oxide semiconductor layer is a film represented as InMO 3 (ZnO) m (m>0, m is one or more metal element selected from Ga, Al, Mn, and Co).
7. A semiconductor device having a photodetector circuit, the photodetector circuit comprising: a plurality of photosensors arranged in a first direction, each including a first terminal and a second terminal; a first wiring extending from an input terminal in the first direction, the first wiring directly connected to the first terminal of each of the plurality of photosensors; and a second wiring extending to an output terminal in the first direction, the second wiring directly connected to the second terminal of each of the plurality of photosensors, wherein the input terminal and the output terminal are disposed in opposition to each other with the plurality of photosensors interposed therebetween.
8. The semiconductor device according to claim 7 , wherein the sum of resistance values of a first path from the input terminal to the output terminal via the first wiring, a first one of the plurality of photosensors, and the second wiring is identical to the sum of resistance values of a second path from the input terminal to the output terminal via the first wiring, a second one of the plurality of photosensors, and the second wiring.
9. The semiconductor device according to claim 7 , wherein the first wiring and the second wiring are formed of a same conductive material and have a same width.
10. The semiconductor device according to claim 7 , wherein the input terminal and the output terminal are connected to a control circuit.
11. The semiconductor device according to claim 9 , wherein the input terminal and the output terminal are connected to a control circuit.
12. The semiconductor device according to claim 7 , wherein each of the plurality of photosensors includes a thin film transistor comprising an oxide semiconductor layer.
13. The semiconductor device according to claim 12 , wherein the oxide semiconductor layer is a film represented as InMO 3 (ZnO) m (m>0, m is one or more metal element selected from Ga, Al, Mn, and Co).
14. A semiconductor device having a photodetector circuit, the photodetector circuit comprising: a plurality of photosensors, each including a first terminal and a second terminal; a first wiring configured to supply a voltage from an input terminal in a first direction, the first wiring directly connected to the first terminal of each of the plurality of photosensors; and a second wiring configured to output a signal from to the second terminal in the first direction, the second wiring directly connected to the second terminal of each of the plurality of photosensors to an output terminal, wherein the input terminal and the output terminal are disposed on opposite sides of the photodetector circuit.
15. The semiconductor device according to claim 14 , wherein the sum of resistance values of a first path from the input terminal to the output terminal via the first wiring, a first one of the plurality of photosensors, and the second wiring is identical to the sum of resistance values of a second path from the input terminal to the output terminal via the first wiring, a second one of the plurality of photosensors, and the second wiring.
16. The semiconductor device according to claim 14 , wherein the first wiring and the second wiring are formed of a same conductive material and have a same width.
17. The semiconductor device according to claim 14 , wherein the input terminal and the output terminal are connected to a control circuit.
18. The semiconductor device according to claim 16 , wherein the input terminal and the output terminal are connected to a control circuit.
19. The semiconductor device according to claim 14 , wherein each of the plurality of photosensors includes a thin film transistor comprising an oxide semiconductor layer.
20. The semiconductor device according to claim 19 , wherein the oxide semiconductor layer is a film represented as InMO 3 (ZnO) m (m>0, m is one or more metal element selected from Ga, Al, Mn, and Co).
21. The semiconductor device according to claim 1 , wherein the first wiring is not directly connected to the output terminal, and the second wiring is not directly connected to the input terminal.
22. The semiconductor device according to claim 1 , wherein the first wiring is not directly connected to the output terminal, and the second wiring is not directly connected to the input terminal.
23. The semiconductor device according to claim 1 , wherein the first wiring is not directly connected to the output terminal, and the second wiring is not directly connected to the input terminal.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
February 10, 2011
August 12, 2014
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