An optoelectronic semiconductor body comprises a substantially planar semiconductor layer sequence having a first and a second main side, which has an active layer suitable for generating electromagnetic radiation. Furthermore, the semiconductor body comprises at least one trench that severs the active layer of the semiconductor layer sequence and serves for subdividing the active of the semiconductor layer sequence into at least two electrically insulated active partial layers. A first and second connection layer arranged on a second main side serve for making contact with the active partial layers. In this case, the first and second connection layers for making contact with the at least two active partial layers are electrically conductively connected to one another in such a way that the active partial layers form a series circuit.
Legal claims defining the scope of protection, as filed with the USPTO.
1. An optoelectronic semiconductor body comprising: a substantially planar semiconductor layer sequence having a first main side and a second main side, said semiconductor layer sequence including an active layer suitable for generating electromagnetic radiation, wherein said first main side is provided for emitting said electromagnetic radiation; a trench that severs at least said active layer of said semiconductor layer sequence and serves for subdividing said active layer of said semiconductor layer sequence into at least two electrically insulated active partial layers; and a first electrical connection layer and a second electrical connection layer that are arranged on said second main side and respectively serving for making contact with a corresponding one of said at least two electrically insulated active partial layers, wherein said first and second electrical connection layers are electrically conductively coupled to each other in such a way that said at least two electrically insulated active partial layers form a series circuit.
2. The optoelectronic semiconductor body of claim 1 , wherein said first electrical connection layer for making contact with a first of said at least two electrically insulated active partial layers is electrically conductively connected to said second electrical connection layer for making contact with a second of said at least two electrically insulated active partial layers.
3. The optoelectronic semiconductor body of claim 1 , wherein said first electrical connection layer and said second electrical connection layer and a separating layer laterally overlap.
4. The optoelectronic semiconductor body of claim 1 , wherein at least one of said first electrical connection layer and said second electrical connection layer reflects in the direction of said first main side a part of said electromagnetic radiation that is emitted by one of said at least two electrically insulated active partial layers in a direction toward said second main side.
5. The optoelectronic semiconductor body of claim 1 , wherein a semiconducting or electrically insulating mirror layer is arranged at least in places between said semiconductor layer sequence and at least one of said first electrical connection layer and said second electrical connection layer.
6. The optoelectronic semiconductor body of claim 5 , wherein said semiconducting or electrically insulating mirror layer has a plurality of openings and at least one of said first electrical connection layer and said second electrical connection layer extends through the openings to said semiconductor layer sequence.
7. The optoelectronic semiconductor body of claim 5 , wherein said semiconducting or electrically insulating mirror layer covers at least 50% of said second main side of said semiconductor layer sequence.
8. The optoelectronic semiconductor body of claim 1 , wherein said semiconductor layer sequence has a current spreading conductive oxide layer adjacent to said second main side.
9. The optoelectronic semiconductor body of claim 1 , wherein each of said first and second electrical connection layers has a contact region suitable for making electrical contact with the optoelectronic semiconductor body from said second main side.
10. The optoelectronic semiconductor body of claim 1 , wherein each of said first and second electrical connection layers comprises a partial element that forms a lead arranged outside the optoelectronic semiconductor body and is connected to a contact on a surface of the optoelectronic semiconductor body.
11. A method for producing an optoelectronic semiconductor body, comprising the steps of: epitaxially growing a semiconductor layer sequence on a growth substrate, wherein said semiconductor layer sequence has an active layer suitable for generating electromagnetic radiation and is provided for emitting said electromagnetic radiation from a first main side; forming an electrically insulating trench at least in said active layer of said semiconductor layer sequence for a purpose of subdivision said active layer into at least two active partial layers; applying a first electrical connection layer at a side of said semiconductor layer sequence that is remote from said first main side, for a purpose of making contact with said active layer; forming a separating layer at a side of said semiconductor layer sequence that is remote from said first main side; and applying a second electrical connection layer at a side of said semiconductor layer sequence that is remote from said first main side, wherein said first electrical connection layer, said separating layer and said second electrical connection layer are formed such that they laterally overlap at least in part, and wherein said first and second electrical connection layers make contact with said at least two active partial layers to form a series circuit.
12. The method of claim 11 , further comprising: forming a perforation in said active layer; and forming a partial region of said second electrical connection layer in said perforation, wherein said second electrical connection layer is electrically insulated from said first electrical connection layer by said separating layer.
13. The method of claim 11 , wherein said first electrical connection layer is formed in reflective fashion.
14. The method of claim 11 , wherein a perforation is worked in said separating layer, wherein said perforation electrically conductively connects said first electrical connection layer to said second electrical connection layer, and wherein said first electrical connection layer makes contact with a first active partial layer and said second electrical connection layer makes contact with a second active partial layer.
15. The method of claim 14 , further comprising: forming a first contact panel on a side remote from said first main side, wherein said first contact panel makes electrical contact with said first active partial layer in a manner making contact with said first electrical connection layer; and forming a second contact panel on said side remote from said first main side, wherein said second contact panel makes electrical contact with said second active partial layer in a manner making contact with said second electrical connection layer.
16. The optoelectronic semiconductor body of claim 3 , wherein said first electrical connection layer is electrically separated from said second electrical connection layer by said separating layer.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
February 25, 2009
September 2, 2014
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