Solid-state imaging device, driving method thereof and electronic apparatus

1. A solid-state imaging device comprising: a semiconductor substrate including a light receiving surface (i) divided according to pixels arranged in a matrix shape, and (ii) formed with a photoelectric converting section; an electrochromic film (i) formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of the pixels, and (ii) having light transmittance operable to change from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode formed below the electrochromic film; and an upper electrode formed above the electrochromic film.

2. The solid-state imaging device according to claim 1 , wherein the time necessary for changing the light transmittance of the electrochromic film from the first transmittance to the second transmittance according to the voltage applied to the electrochromic film is shorter than one second.

3. The solid-state imaging device according to claim 1 , wherein the pixels include a red pixel, a green pixel and a blue pixel, the device further comprising a color filter (i) formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, (ii) in a region where each of the red pixel, the green pixel and the blue pixel is formed, and (iii) operable to transmit red, green and blue light.

4. The solid-state imaging device according to claim 1 , wherein the electrochromic film is a stacked body including an electrochromic material layer, a solid electrolyte layer and an ion storage layer.

5. The solid-state imaging device according to claim 1 , further comprising: a planarizing film formed in another portion of the pixels other than the portion of the pixels in which the electrochromic film is formed.

6. The solid-state imaging device according to claim 1 , further comprising a photochromic film which is formed between the lower electrode and the upper electrode to be stacked with the electrochromic film and has light transmittance changing from a third transmittance to a fourth transmittance according to the amount of incident light.

7. The solid-state imaging device according to claim 1 , wherein the upper electrode and the lower electrode are made of nano-carbon material including graphene or carbon nanotubes, or ITO.