When forming a conductive film by a method comprising sputtering after grinding the back surface of a semiconductor substrate, in order to avoid discharge from a part of an adhesive flown out at the outer periphery of the substrate, wherein the adhesive is used to fix the substrate to a support during grinding, at least the substrate end or the adhesive is removed after grinding the semiconductor substrate and before forming the conductive film, so that a gap between the substrate end and the adhesive may have a predetermined size.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for manufacturing a semiconductor device comprising: fixing a semiconductor substrate to a support having an external diameter greater than that of the semiconductor substrate by use of an adhesive; and forming a conductive film on the semiconductor substrate by a method comprising at least sputtering after fixing the semiconductor substrate to the support; wherein before forming the conductive film, a gap between the semiconductor substrate and the adhesive flown out from the outer periphery of the semiconductor substrate is enlarged to a predetermined size by removing at least one of the semiconductor substrate and the adhesive.
2. A method according to claim 1 , the gap is enlarged by removing a part of the semiconductor layer in the outer periphery of the semiconductor substrate.
3. A method according to claim 1 , the gap is enlarged by removing at least a part of the adhesive flown out from the outer periphery of the semiconductor substrate.
4. A method according to claim 3 , the adhesive flown out from the outer periphery of the semiconductor substrate is entirely removed.
5. A method for manufacturing a semiconductor device, comprising: fixing a semiconductor substrate to a support on a main surface of the semiconductor substrate by use of an adhesive, a main surface of the semiconductor substrate comprising a circuit layer having a plurality of semiconductor elements, the support having an external diameter greater than that of the semiconductor substrate; reducing the thickness of the semiconductor substrate by grinding the back surface of the semiconductor substrate; forming a conductive film on the back surface of the semiconductor substrate by a method comprising at least sputtering, after fixing the semiconductor substrate to the support; and separating the semiconductor substrate, on the back surface of which the conductive film is formed, from the adhesive and the support, wherein after reducing the thickness of the semiconductor substrate and before forming the conductive film, a gap between the semiconductor substrate and the adhesive flown out from the outer periphery of the semiconductor substrate is enlarged to a predetermined size.
6. A method according to claim 5 , the gap is enlarged by removing a part of the semiconductor layer in the outer periphery of the semiconductor substrate.
7. A method according to claim 5 , the gap is enlarged by removing at least a part of the adhesive flown out from the outer periphery of the semiconductor substrate.
8. A method according to claim 7 , the adhesive flown out from the outer periphery of the semiconductor substrate is entirely removed.
9. A method according to claim 5 , the gap is enlarged by removing a part of the semiconductor layer in the outer periphery of the semiconductor substrate and a part of the adhesive flown out from the outer periphery of the semiconductor substrate.
10. A method according to claim 5 , the enlarged gap is at least 6 μm.
11. A method according to claim 10 , the gap has a size obtained by subtracting twice of the thickness of the conductive film formed by sputtering.
12. A method according to claim 5 , forming a conductive film comprises forming a seed layer by sputtering; and forming an electroplating film by using the seed layer as a core.
13. A method for manufacturing a semiconductor device, the semiconductor device comprising a circuit layer having a plurality of semiconductor elements on the main surface of a semiconductor substrate and a through-substrate via (TSV) penetrating between the main surface and the back surface facing the main surface, the method comprising: fixing the semiconductor substrate, on which the circuit layer is formed, to a support having an external diameter greater than that of the substrate on the main surface by use of an adhesive; reducing the thickness of the semiconductor substrate by grinding the back surface of the semiconductor substrate; forming a through hole penetrating the semiconductor substrate from the back surface to the main surface; forming a TSV by filling a conductive film in the through hole; and separating the semiconductor substrate, on which the conductive film is formed, the adhesive, and the support, wherein forming the TSV comprises forming a seed layer covering the interior of the through hole by sputtering, and thereafter forming a conductive film in the through hole by electroplating the seed layer as an electrode; and wherein after reducing the thickness of the semiconductor substrate and before forming the seed layer, a gap between the semiconductor substrate and the adhesive flown out from the outer periphery of the semiconductor substrate is enlarged to a predetermined size.
14. A method according to claim 13 , the gap is enlarged by removing a part of the semiconductor layer in the outer periphery of the semiconductor substrate.
15. A method according to claim 13 , the gap is enlarged by removing a part of the semiconductor layer in the outer periphery of the semiconductor substrate and a part of the adhesive flown out from the outer periphery of the semiconductor substrate.
16. A method according to claim 14 , a part of the semiconductor layer in the outer periphery of the semiconductor substrate is removed concurrently with forming the through hole.
17. A method according to claim 13 , the gap is enlarged by removing at least a part of the adhesive flown out from the outer periphery of the semiconductor substrate.
18. A method according to claim 17 , the adhesive flown out from the outer periphery of the semiconductor substrate is entirely removed.
19. A method according to claim 13 , the enlarged gap is at least 6 μm.
20. A method according to claim 19 , the gap has a size obtained by subtracting twice of the thickness of the seed layer made by sputtering.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 8, 2011
October 7, 2014
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