According to one embodiment, a method for manufacturing a molecular memory device includes: forming a first wiring layer including a plurality of first wirings extending in a first direction; forming a sacrificial film on the first wiring layer; forming a plurality of core members on the first wiring layer, the core member extending in a second direction crossing the first direction and being formed from an insulating material different from the sacrificial film; forming a second wiring on a side surface of the core member; removing a portion of the sacrificial film located immediately below the second wiring; embedding a polymer; and embedding an insulating. The embedding a polymer includes embedding a polymer serving as a memory material between the first wiring and the second wiring. The embedding an insulating member includes embedding an insulating member in a space between the second wirings between the core members.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for manufacturing a molecular memory device, comprising: forming a first wiring layer including a plurality of first wirings extending in a first direction; forming a sacrificial film on the first wiring layer; forming a plurality of core members on the first wiring layer, the core members extending in a second direction crossing the first direction and being formed from an insulating material different from the sacrificial film; forming second wirings on side surfaces of the core members; removing portions of the sacrificial film located immediately below the second wirings to form first spaces between the first in and the second wirings; embedding, after forming the second wirings and removing the portions of the sacrificial film, a polymer serving as a memory material into the first spaces; and embedding an insulating member in a second space between the second wirings between the core members.
2. The method according to claim 1 , wherein the second wirings are formed from a material different in kind from a material of the first wiring, and a linker is provided at one end of the polymer.
3. The method according to claim 1 , wherein a distance between the second wirings between adjacent ones of the core members is made longer than twice a film thickness of the sacrificial film.
4. The method according to claim 1 , wherein the embedding a polymer includes: applying a solution dispersed with the polymer in a solvent; and drying the solution.
5. The method according to claim 1 , wherein the core members are first core members, and the forming a first wiring layer includes: forming a plurality of second core members extending in the first direction, the second core members being insulative; forming the first wirings on side surfaces of the second core members; and embedding another insulating member in a third space between the first wirings between the second core members, and the removing includes performing etching under a condition such that an etching rate of the sacrificial film is higher than an etching rate of the another insulating member.
6. The method according to claim 1 , further comprising: forming a spacer insulating film on a side surface of the second wiring, the spacer insulating film being made of a material different in kind from material forming the insulating member.
7. The method according to claim 1 , wherein the core members are formed on the sacrificial film.
8. The method according to claim 1 , wherein the sacrificial film is formed so as to cover the core member.
9. The method according to claim 1 , wherein the embedding an insulating member includes: forming an insulating film by entirely depositing another insulating material different in kind from the insulating material forming the core members; and removing portions of the insulating film formed on upper surfaces of the core members and the second wirings by performing planarization processing using the core members as a stopper.
10. The method according to claim 1 , wherein the sacrificial film is formed from silicon oxide, and the core members are formed from silicon nitride.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
March 16, 2012
October 28, 2014
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