Fabrication of a solar cell using a printed contact mask. The contact mask may include dots formed by inkjet printing. The dots may be formed in openings between dielectric layers (e.g., polyimide). Intersections of overlapping dots may form gaps that define contact regions. The spacing of the gaps may be dictated by the alignment of nozzles that dispense the dots. Using the dots as a contact mask, an underlying dielectric layer may be etched to form the contact regions through the underlying dielectric layer. Metal contact fingers may be formed over the wafer to form electrical connections to corresponding diffusion regions through the contact regions.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of fabricating a solar cell, the method comprising: forming a dielectric layer over a wafer to be processed into a solar cell; and inkjet printing a plurality of dots over the dielectric layer to form a plurality of gaps, each gap in the plurality of gaps being an area where no dot of the plurality of dots is printed, and wherein an entire perimeter of each of the gaps is surrounded with overlapping dots of the plurality of dots.
2. The method of claim 1 , further comprising: removing portions of the dielectric layer to form a plurality of contact regions through the dielectric layer and onto diffusion regions of the solar cell, a location of a contact region in the plurality of contact regions being defined by a gap in the plurality of gaps.
3. The method of claim 2 , further comprising: forming metal contact fingers over the dielectric layer to create electrical connections to the diffusion regions by way of the plurality of contact regions.
4. The method of claim 3 , wherein the at least some of the metal contact fingers comprise N-type metal contact fingers formed to create electrical connections to corresponding N-type diffusion regions, and at least some of the metal contact fingers comprise P-type metal contact fingers formed to create electrical connections to corresponding P-type diffusion regions, the P-type and N-type diffusion regions being formed on a backside of the wafer, which is opposite a front side of the wafer facing the sun during normal operation.
5. The method of claim 1 , wherein the plurality of dots is printed in one pass of a printhead in one direction over the wafer.
6. The method of claim 5 , further comprising: passing the printhead over the wafer at least in another pass to print another dot covering a gap in the plurality of gaps.
7. The method of claim 1 , further comprising forming contact regions through the dielectric layer to expose N-type and P-type diffusion regions on a backside of the solar cell, the backside being opposite a front side of the wafer facing the sun during normal operation.
8. The method of claim 1 , wherein the dielectric layer comprises silicon dioxide.
9. A method of fabricating a solar cell, the method comprising: forming a dielectric layer over a solar cell wafer; and printing a plurality of dots to form a contact mask that comprises a plurality of gaps, wherein said printing includes surrounding an entire perimeter of each of the gaps with continuously overlapping dots of the plurality of dots.
10. The method of claim 9 , further comprising: etching portions of the dielectric layer that are exposed through the gaps to form a plurality of contact regions that exposes a plurality of diffusion regions of the solar cell.
11. The method of claim 10 , further comprising: removing the plurality of dots from the wafer; and forming metal contact fingers in the plurality of contact regions to electrically connect to corresponding diffusion regions in the plurality of diffusion regions.
12. The method of claim 11 , wherein some of the metal contact fingers comprise N-type metal contact fingers electrically connected to N-type diffusion regions in the plurality of diffusion regions on a backside of the solar cell and some of the metal contact fingers comprise P-type metal contact fingers electrically connected to P-type diffusion regions in the plurality of diffusion regions on the backside of the solar cell.
13. The method of claim 9 , wherein the plurality of dots are printed using an inkjet printer.
14. The method of claim 9 , wherein the dielectric layer comprises silicon dioxide.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
November 18, 2010
November 11, 2014
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