An embodiment of the disclosed invention is a method for manufacturing a semiconductor device, which includes the steps of: forming a first insulating film; performing oxygen doping treatment on the first insulating film to supply oxygen to the first insulating film; forming a source electrode, a drain electrode, and an oxide semiconductor film electrically connected to the source electrode and the drain electrode, over the first insulating film; performing heat treatment on the oxide semiconductor film to remove a hydrogen atom in the oxide semiconductor film; forming a second insulating film over the oxide semiconductor film; and forming a gate electrode in a region overlapping with the oxide semiconductor film, over the second insulating film. The manufacturing method allows the formation of a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for manufacturing a semiconductor device, the method comprising the steps of: forming a first insulating film over a substrate; forming an oxide semiconductor film over the first insulating film; adding oxygen to the oxide semiconductor film; forming a second insulating film over the oxide semiconductor film added with oxygen; and forming a gate electrode over the second insulating film, wherein the oxide semiconductor film is formed by sputtering at a temperature equal to or higher than 100° C. and equal to or lower than 400° C.
2. The method according to claim 1 , wherein the addition of oxygen is performed by heating the oxide semiconductor film in the presence of oxygen.
3. The method according to claim 1 , wherein the addition of oxygen is performed by treating the oxide semiconductor film with plasmatized oxygen.
4. The method according to claim 1 , further comprising a step of: forming a source electrode and a drain electrode over the oxide semiconductor film, wherein the second insulating film is formed over the source electrode and the drain electrode.
5. The method according to claim 1 , further comprising a step of forming a third insulating film over the gate electrode.
6. The method according to claim 1 , wherein the first insulating film has a stacked structure.
7. The method according to claim 1 , wherein the oxide semiconductor film comprises gallium.
8. A method for manufacturing a semiconductor device, the method comprising the steps of: forming a first insulating film over a substrate; forming a source electrode and a drain electrode over the first insulating film; forming an oxide semiconductor film over the source electrode and the drain electrode; adding oxygen to the oxide semiconductor film; forming a second insulating film over the oxide semiconductor film added with oxygen; and forming a gate electrode over the second insulating film, wherein the oxide semiconductor film is formed by sputtering at a temperature equal to or higher than 100° C. and equal to or lower than 400° C.
9. The method according to claim 8 , wherein the addition of oxygen is performed by heating the oxide semiconductor film in the presence of oxygen.
10. The method according to claim 8 , wherein the addition of oxygen is performed by treating the oxide semiconductor film with plasmatized oxygen.
11. The method according to claim 8 , further comprising a step of forming a third insulating film over the gate electrode.
12. The method according to claim 8 , wherein the first insulating film has a stacked structure.
13. The method according to claim 8 , wherein the oxide semiconductor film comprises gallium.
14. A method for manufacturing a semiconductor device, the method comprising the steps of: forming a first insulating film over a substrate; forming an oxide semiconductor film over the first insulating film; forming a source electrode and a drain electrode over the oxide semiconductor film; adding oxygen to the oxide semiconductor film; forming a second insulating film over the oxide semiconductor film added with oxygen; and forming a gate electrode over the second insulating film, wherein the oxide semiconductor film is formed by sputtering at a temperature equal to or higher than 100° C. and equal to or lower than 400° C.
15. The method according to claim 14 , wherein the addition of oxygen is performed by heating the oxide semiconductor film in the presence of oxygen.
16. The method according to claim 14 , wherein the addition of oxygen is performed by treating the oxide semiconductor film with plasmatized oxygen.
17. The method according to claim 14 , further comprising a step of forming a third insulating film over the gate electrode.
18. The method according to claim 14 , wherein the first insulating film has a stacked structure.
19. The method according to claim 14 , wherein the oxide semiconductor film comprises gallium.
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February 20, 2014
November 25, 2014
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