A semiconductor device production method includes: treating a wafer which contains a silicon substrate with dilute hydrofluoric acid in a bath; introducing water into the bath while discharging the dilute hydrofluoric acid from the bath; and introducing H2O2 and warm water warmer than the above-mentioned water into the bath after the discharge of dilute hydrofluoric acid from the bath in such a manner that the introduction of warm water is started simultaneously with the start of H2O2 supply or subsequently to the start of H2O2 supply.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device production method comprising: treating a wafer that includes a silicon substrate with dilute hydrofluoric acid in a bath; introducing first water into the bath and discharging the dilute hydrofluoric acid from the bath; and introducing H 2 O 2 and second water warmer than the first water into the bath after the discharge of dilute hydrofluoric acid from the bath in such a manner that the introduction of the second water is started simultaneously with the start of H 2 O 2 supply or subsequently to the start of H 2 O 2 supply.
2. The semiconductor device production method according to claim 1 , further comprising introducing HCl or NH 4 OH into the bath after the introducing H 2 O 2 .
3. The semiconductor device production method according to claim 2 , wherein HCL or NH 4 OH is introduced after temperature in the bath has reached a target temperature.
4. The semiconductor device production method according to claim 3 , wherein the target temperature is in a range of 60° C. to 80° C. and HCl is introduced into the bath.
5. The semiconductor device production method according to claim 3 , wherein the target temperature is in a range of 40° C. to 80° C. and NH 4 OH is introduced into the bath.
6. The semiconductor device production method according to claim 1 , wherein temperature of the first water is in a range of 24° C. to 26° C.
7. The semiconductor device production method according to claim 1 , wherein dissolved oxygen concentration in the water and that in the second water are 80 ppb or less.
8. The semiconductor device production method according to claim 1 , further comprising, before the treatment with dilute hydrofluoric acid, forming a silicon oxide film on the silicon substrate, forming a mask pattern defining an opening on the silicon oxide film, and etching the silicon oxide film and the silicon substrate in the opening to form an isolation trench in the silicon substrate.
9. The semiconductor device production method according to claim 8 , wherein the treatment with dilute hydrofluoric acid shifts the end of the silicon oxide film backward, and further comprising, after the backward shift of the end of the silicon oxide film, a silicon oxide film is grown on the inner wall of the isolation trench by thermal oxidation.
10. The semiconductor device production method according to claim 1 , further comprising, before the treatment with dilute hydrofluoric acid, forming an isolation trench in the silicon substrate, buried silicon oxide film in the isolation trench, and forming a silicon oxide film on the silicon substrate outside the isolation trench.
11. The semiconductor device production method according to claim 10 , further comprising, before the treatment with dilute hydrofluoric acid, implanting impurity in the silicon substrate through the silicon oxide film on the silicon substrate outside the isolation trench.
12. The semiconductor device production method according to claim 10 , wherein the treatment with dilute hydrofluoric acid removes the silicon oxide film on the silicon substrate outside the isolation trench, and further comprising, after the removal of the silicon oxide film on the silicon substrate outside the isolation trench, growing a silicon oxide film on the silicon substrate by thermal oxidation.
13. A semiconductor device production method comprising: treating a wafer that includes a silicon substrate with dilute hydrofluoric acid treatment in a bath; introducing first water into the bath and discharging the dilute hydrofluoric acid from the bath; and introducing second water warmer than the first water into the bath after the discharge of the dilute hydrofluoric acid from the bath, and introducing H 2 O 2 into the bath before temperature in the bath reaches 30° C.
14. The semiconductor device production method according to claim 13 , wherein the introducing H 2 O 2 into the bath before temperature in the bath reaches 30° C. is implemented in such a manner that the introducing second water is started simultaneously with the introducing H 2 O 2 or subsequently to the introducing H 2 O 2 .
15. The semiconductor device production method according to claim 13 , wherein the introducing H 2 O 2 into the bath before temperature in the bath reaches 30° C. is implemented in such a manner that the introducing second water is started prior to the introducing H 2 O 2 .
16. The semiconductor device production method according to claim 13 , further comprising introducing HCl or NH 4 OH into the bath after the introducing H 2 O 2 .
17. The semiconductor device production method according to claim 13 , wherein temperature of the first water is in a range of 24° C. to 26° C.
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April 5, 2012
February 10, 2015
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