A method for producing a protective structure may include: providing a semiconductor base substrate with a doping of a first conductivity type; producing a first epitaxial layer on the substrate; implanting a dopant of a second conductivity type in a delimited implantation region of the first epitaxial layer; applying a second epitaxial layer with a doping of the second conductivity type on the first epitaxial layer; forming an insulation zone in the second epitaxial layer, such that the second epitaxial layer is subdivided into first and second regions; producing a first dopant zone with a doping of the first conductivity type in the first region above the implantation region; producing a second dopant zone with a doping of the second conductivity type in the second region; outdiffusing the dopant from the implantation region to form a buried layer at the junction between the first epitaxial layer and the first region.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for producing a protective structure, the method comprising: providing a semiconductor base substrate with a doping of a first conductivity type; producing a first epitaxial layer on the semiconductor base substrate; implanting a dopant of a second conductivity type in a delimited implantation region of the first epitaxial layer; applying a second epitaxial layer with a doping of the second conductivity type on the first epitaxial layer; forming at least one insulation zone in the second epitaxial layer, such that the second epitaxial layer is subdivided into a first region and into a second region; producing a first dopant zone with a doping of the first conductivity type in the first region above the implantation region; producing a second dopant zone with a doping of the second conductivity type in the second region; and outdiffusing the dopant from the implantation region in order to form a buried layer at the junction between the first epitaxial layer and the first region of the second epitaxial layer.
2. The method of claim 1 , wherein the first epitaxial layer is an intrinsic layer.
3. The method of claim 1 , further comprising forming a common connection device for the first dopant zone and the second dopant zone.
4. The method of claim 3 , further comprising forming at least one connecting zone between the common connection device and the buried layer.
5. The method of claim 4 , wherein the at least one connecting zone is formed with a dopant of the second conductivity type and with a dopant concentration k v ≧1×10 17 cm −3 .
6. The method of claim 1 , wherein forming the at least one insulation zone comprises: implanting a dopant of the first conductivity type into at least one of the semiconductor base substrate and the first epitaxial layer before applying the second epitaxial layer; implanting a dopant of the first conductivity type into the second epitaxial layer after applying the second epitaxial layer; and outdiffusing the dopant in order to form two dopant regions lying one above another.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
April 24, 2014
February 10, 2015
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