A stackable semiconductor assembly includes a semiconductor device, a heat spreader, an adhesive, a plated through-hole, first build-up circuitry and second build-up circuitry. The heat spreader includes a bump and a flange. The bump defines a cavity. The semiconductor device is mounted on the bump at the cavity, electrically connected to the first build-up circuitry and thermally connected to the bump. The bump extends into an opening in the adhesive and the flange extends laterally from the bump at the cavity entrance. The first build-up circuitry and the second build-up circuitry extend beyond the semiconductor device in opposite vertical directions. The plated through-hole extends through the adhesive and provides signal routing between the first build-up circuitry and the second build-up circuitry. The heat spreader provides heat dissipation for the semiconductor device.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A thermally enhanced stackable semiconductor assembly; comprising: a heat spreader that includes a bump and a flange, wherein (i) the bump is adjacent to and integral with the flange and extends from the flange in a second vertical direction, (ii) the flange extends laterally from the bump in lateral directions orthogonal to the second vertical direction, and (iii) a cavity in the bump faces in a first vertical direction opposite the second vertical direction, is covered by the bump in the second vertical direction and has an entrance at the flange; a substrate that includes an aperture; an adhesive that includes an opening, wherein the bump extends into the opening and the aperture, and the adhesive contacts the bump, the flange and the substrate, is sandwiched between the bump and the substrate and between the flange and the substrate and extends laterally from the bump to peripheral edges of the assembly; a semiconductor device that includes a contact pad and is mounted on the bump and extends into the cavity; a first dielectric layer that extends from the semiconductor device and the flange in the first vertical direction, extends beyond the adhesive and the substrate in the first vertical direction, is spaced from the substrate and includes a first via opening aligned with the contact pad; a first conductive trace that extends from the first dielectric layer in the first vertical direction and extends laterally on the first dielectric layer and extends through the first via opening in the second vertical direction to the contact pad to provide an electrical connection for the semiconductor device; a second dielectric layer that extends beyond the bump, the adhesive and the substrate in the second vertical direction and is spaced from the flange and the first dielectric layer; a second conductive trace that extends from the second dielectric layer in the second vertical direction and extends laterally on the second dielectric layer; and a plated through-hole that extends through the adhesive and the substrate to provide an electrical connection between the first conductive trace and the second conductive trace.
2. The assembly of claim 1 , wherein the semiconductor device is located at the cavity and is thermally connected to the bump using a die attach that is located within the cavity.
3. The assembly of claim 1 , wherein the bump has an irregular thickness characteristic of stamping,
4. The assembly of claim 1 , wherein the bump includes a first bent corner adjacent to the second dielectric layer and a second bent corner adjacent to the flange.
5. The assembly of claim 1 , wherein the bump is coplanar with the adhesive at the second dielectric layer,
6. The assembly of claim 1 , wherein the cavity extends across most of the bump in the vertical and lateral directions.
7. The assembly of claim 1 , wherein the flange contacts and is sandwiched between the adhesive and the first dielectric layer.
8. The assembly of claim 1 , wherein the adhesive contacts and is sandwiched between the flange and the substrate and between the first dielectric layer and the second dielectric layer, contacts the plated through-hole and is spaced from the first conductive trace and the second conductive trace.
9. The assembly of claim 1 , wherein the adhesive has a first thickness where it is adjacent to the flange and a second thickness where it is adjacent to the bump that is different from the first thickness.
10. The assembly of claim 1 , wherein the first dielectric layer includes an additional first via opening aligned with the flange and the first conductive trace extends through the additional first via opening in the second vertical direction to provide an electrical connection for the flange.
11. The assembly of claim 1 , wherein the first dielectric layer includes an additional first via opening aligned with the plated through-hole and the first conductive trace extends through the additional first via opening in the second vertical direction to an inner pad that is spaced from and coplanar with and has the same thickness as the flange to provide an electrical connection for the plated through-hole.
12. The assembly of claim 1 , wherein the first dielectric layer further extends into the cavity.
13. The assembly of claim 1 , wherein the first conductive trace further extends through the first via opening into the cavity.
14. The assembly of claim 1 , wherein the second dielectric layer includes a second via opening aligned with the bump and the second conductive trace extends through the second via opening in the first vertical direction to the bump to provide an electrical connection for the bump.
15. The assembly of claim 1 , wherein the second dielectric layer includes a second via opening aligned with the plated through-hole and the second conductive trace extends through the second via opening in the first vertical direction to an inner pad to provide an electrical connection for the plated through-hole.
16. The assembly of claim 1 , wherein the plated through-hole is spaced from the heat spreader.
17. The assembly of claim 1 , wherein the first dielectric layer and the second dielectric layer are the same material and have the same thickness, the first conductive trace and the second conductive trace are the same material and have the same thickness, the first dielectric layer and the first conductive trace have flat elongated surfaces that face in the first vertical direction and the second dielectric layer and the second conductive trace have flat elongated surfaces that face in the second vertical direction.
18. The assembly of claim 1 , wherein the flange, the substrate, the first dielectric layer and the second dielectric layer extend to peripheral edges of the assembly.
19. The assembly of claim 1 , wherein the heat spreader further includes a base, and (i) the bump is adjacent to the base and extends from the base in the first vertical direction, (ii) the base extends from and covers the bump in the second vertical direction and extends laterally from the bump, (iii) the flange is spaced from the base, (iv) the cavity is spaced from the base by the bump, (v) the adhesive contacts the base and is sandwiched between the base and the flange, and (vi) the second dielectric layer extends from the base in the second vertical direction.
20. The assembly of claim 19 , wherein the bump includes a first bent corner adjacent to the base and a second bent corner adjacent to the flange.
21. The assembly of claim 19 , wherein the bump is coplanar with the adhesive at the base.
22. The assembly of claim 19 , wherein the second dielectric layer includes a second via opening aligned with the plated through-hole and the second conductive trace extends through the second via opening in the first vertical direction to an inner pad that is spaced from and coplanar with the base and has the same thickness as the base where closest to one another to provide an electrical connection for the plated through-hole.
23. The assembly of claim 1 , further comprising: a first interconnect pad that extends to or beyond the first conductive trace in the first vertical direction and faces in the first vertical direction, wherein the first conductive trace provides an electrical connection between the first interconnect pad and the plated through-hole; and a second interconnect pad that extends to or beyond the second conductive trace in the second vertical direction and faces in the second vertical direction, wherein the second conductive trace provides an electrical connection between the second interconnect pad and the plated through-hole.
24. The assembly of claim 1 , further comprising; a third dielectric layer that extends from the first dielectric layer and the first conductive trace in the first vertical direction and includes a third via opening aligned with the first conductive trace; and a third conductive trace that extends from the third dielectric layer in the first vertical direction and extends laterally on the third dielectric layer and extends through the third via opening in the second vertical direction to the first conductive trace to provide an electrical connection for the first conductive trace.
25. The assembly of claim 1 , further comprising: a fourth dielectric layer that extends from the second dielectric layer and the second conductive trace in the second vertical direction and includes a fourth via opening aligned with the second conductive trace; and a fourth conductive trace that extends from the fourth dielectric layer in the second vertical direction and extends laterally on the fourth dielectric layer and extends through the fourth via opening in the first vertical direction to the second conductive trace to provide an electrical connection for the second conductive trace,
26. A thermally enhanced stackable semiconductor assembly, comprising: a heat spreader that includes a bump and a flange, wherein (i) the bump is adjacent to and integral with the flange and extends from the flange in a second vertical direction, (ii) the flange extends laterally from the bump in lateral directions orthogonal to the second vertical direction, and (iii) a cavity in the bump faces in a first vertical direction opposite the second vertical direction, is covered by the bump in the second vertical direction and has an entrance at the flange; an adhesive that includes an opening, wherein the bump extends into the opening, and the adhesive contacts the bump and the flange, laterally covers and surrounds and conformally coats a sidewall of the bump and extends laterally from the bump to peripheral edges of the assembly; a semiconductor device that includes a contact pad and is mounted on the bump and extends into the cavity; a first dielectric layer that extends from the semiconductor device and the flange in the first vertical direction, extend beyond the adhesive in the first vertical direction and includes a first via opening aligned with the contact pad; a first conductive trace that extends from the first dielectric layer in the first vertical direction and extends laterally on the first dielectric layer and extends through the first via opening in the second vertical direction to the contact pad to provide an electrical connection for the semiconductor device; a second dielectric layer that extends beyond the bump and the adhesive in the second vertical direction and is spaced from the flange and the first dielectric layer; a second conductive trace that extends from the second dielectric layer in the second vertical direction and extends laterally on the second dielectric layer; and a plated through-hole that extends through the adhesive to provide an electrical connection between the first conductive trace and the second conductive trace.
27. The assembly of claim 26 , wherein the semiconductor device is located at the cavity and is thermally connected to the bump using a die attach that is located within the cavity.
28. The assembly of claim 26 , wherein the bump has an irregular thickness characteristic of stamping.
29. The assembly of claim 26 , wherein the bump includes a first bent corner adjacent to the second dielectric layer and a second bent corner adjacent to the flange.
30. The assembly of claim 26 , wherein the bump is coplanar with the adhesive at the second dielectric layer.
31. The assembly of claim 26 , wherein the cavity extends across most of the bump in the vertical and lateral directions.
32. The assembly of claim 26 , wherein the flange contacts and is sandwiched between the adhesive and the first dielectric layer,
33. The assembly of claim 26 , wherein the adhesive contacts and is sandwiched between the first dielectric layer and the second dielectric layer, contacts the plated through-hole and is spaced from the first conductive trace and the second conductive trace.
34. The assembly of claim 26 , wherein the adhesive has a first thickness where it is adjacent to the flange and a second thickness where it is adjacent to the bump that is different from the first thickness.
35. The assembly of claim 26 , wherein the first dielectric layer includes an additional first via opening aligned with the flange and the first conductive trace extends through the additional first via opening in the second vertical direction to provide an electrical connection for the flange.
36. The assembly of claim 26 , wherein the first dielectric layer includes an additional first via opening aligned with the plated through-hole and the first conductive trace extends through the additional first via opening in the second vertical direction to an inner pad that is spaced from and coplanar with and has the same thickness as the flange to provide an electrical connection for the plated through-hole.
37. The assembly of claim 26 , wherein the first dielectric layer further extends into the cavity.
38. The assembly of claim 26 , wherein the first conductive trace further extends through the first via opening into the cavity.
39. The assembly of claim 26 , wherein the second dielectric layer includes a second via opening aligned with the bump, and the second conductive trace extends through the second via opening in the first vertical direction to the bump to provide an electrical connection for the bump.
40. The assembly of claim 26 , wherein the second dielectric layer includes a second via opening aligned with the plated through-hole and the second conductive trace extends through the second via opening in the first vertical direction to an inner pad to provide an electrical connection for the plated through-hole.
41. The assembly of claim 26 , wherein the plated through-hole is spaced from the heat spreader.
42. The assembly of claim 26 , wherein the first dielectric layer and the second dielectric layer are the same material and have the same thickness, the first conductive trace and the second conductive trace are the same material and have the same thickness, the first dielectric layer and the first conductive trace have flat elongated surfaces that face in the first vertical direction and the second dielectric layer and the second conductive trace have flat elongated surfaces that face in the second vertical direction.
43. The assembly of claim 26 , wherein the flange, the first dielectric layer and the second dielectric layer extend to peripheral edges of the assembly.
44. The assembly of claim 26 , wherein the heat spreader further includes a base, and (i) the bump is adjacent to the base and extends from the base in the first vertical direction, (ii) the base extends from and covers the bump in the second vertical direction and extends laterally from the bump, (iii) the flange is spaced from the base, (iv) the cavity is spaced from the base by the bump, (v) the adhesive contacts the base and is sandwiched between the base and the flange, and (vi) the second dielectric layer extends from the base in the second vertical direction.
45. The assembly of claim 44 , wherein the bump includes a first bent corner adjacent to the base and a second bent corner adjacent to the flange.
46. The assembly of claim 44 , wherein the bump is coplanar with the adhesive at the base.
47. The assembly of claim 44 , wherein the second dielectric layer includes a second via opening aligned with the plated through-hole and the second conductive trace extends through the second via opening in the first vertical direction to an inner pad that is spaced from and coplanar with the base and has the same thickness as the base where closest to one another to provide an electrical connection for the plated through-hole.
48. The assembly of claim 26 , further comprising: a first interconnect pad that extends to or beyond the first conductive trace in the first vertical direction and faces in the first vertical direction, wherein the first conductive trace provides an electrical connection between the first interconnect pad and the plated through-hole; and a second interconnect pad that extends to or beyond the second conductive trace in the second vertical direction and faces in the second vertical direction, wherein the second conductive trace provides an electrical connection between the second interconnect pad and the plated through-hole.
49. The assembly of claim 26 , further comprising: a third dielectric layer that extends from the first dielectric layer and the first conductive trace in the first vertical direction and includes a third via opening aligned with the first conductive trace; and a third conductive trace that extends from the third dielectric layer in the first vertical direction and extends laterally on the third dielectric layer and extend through the third via opening in the second vertical direction to the first conductive trace to provide an electrical connection for the first conductive trace.
50. The assembly of claim 26 , further comprising: a fourth dielectric layer that extends from the second dielectric layer and the second conductive trace in the second vertical direction and includes a fourth via opening aligned with the second conductive trace; and a fourth conductive trace that extends from the fourth dielectric layer in the second vertical direction and extends laterally on the fourth dielectric layer and extends through the fourth via opening in the first vertical to the second conductive trace to provide an electrical connection for the second conductive trace.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
November 2, 2011
February 10, 2015
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