An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/−10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.
Legal claims defining the scope of protection, as filed with the USPTO.
1. An optical device comprising: a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-2) orientation, the semipolar surface having an offcut of the orientation; an n-type region overlying the semipolar surface; a separate confinement heterostructure (SCH) region overlying the semipolar surface; an active region comprising at least one light emitting active layer region overlying the n-type region; the light emitting active layer region comprising a quantum well region or a double hetero-structure region; and a p-type region overlying the active region; wherein the active region is configured with the semipolar surface to emit electromagnetic radiation with a wavelength between 400 nm and 500 nm or between 500 nm and 660 nm.
2. The device of claim 1 , wherein the offcut of the orientation is between +/−5 degrees toward a c-plane and between +/−10 degrees toward an a-plane.
3. The device of claim 1 , wherein the active region comprises a plurality of quantum well regions comprising 1 to 7 quantum wells, each of the quantum wells comprising substantially InGaN; the plurality of quantum well regions ranging in thickness from 2 nm to 5 nm or from 5 nm to 10 nm.
4. The device of claim 1 , wherein the active region comprises a double heterostructure region; the double heterostructure region ranging in thickness from about 10 nm to about 25 nm.
5. The device of claim 1 , further comprising an electron blocking layer (EBL) overlying the active region; the EBL comprising AlGaN, AlInN, or AlInGaN, ranging in thickness from 5 nm to 35 nm, and containing a mole fraction of AlN ranging from 5% to 25%.
6. The device of claim 1 , wherein the SCH region comprises InGaN, which comprises an InN mole fraction ranging from 3% to 15% and a thickness ranging from 30 nm to 200 nm.
7. The device of claim 1 , wherein the SCH region is formed by a superlattice characterized by 25 to 70 periods of GaN/InGaN layers, each of the InGaN and GaN layers in the superlattice having a thickness ranging from 1 nm to 7 nm.
8. The device of claim 1 , wherein the active region is characterized by an emission of electromagnetic radiation with a spectral full width at half maximum less than 24 nm with a peak wavelength of 420 nm to 460 nm when operated as a light emitting diode at an operation current of 100 mA.
9. The device of claim 1 , wherein the active region is characterized by an emission of electromagnetic radiation with a spectral full width at half maximum less than 34 nm with a peak wavelength of 500 nm to 530 nm when operated as a light emitting diode at an operation current of 100 mA.
10. An optical device comprising: a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-2) orientation, the semipolar surface having an offcut of the orientation; an n-type region overlying the semipolar surface; a superlattice region overlying the semipolar surface, the superlattice region being characterized by 20 to 150 periods of alternating GaN and InGaN layers, alternating AlGaN and InAlGaN layers, alternating AlGaN and GaN layers, or alternating GaN and InAlAGaN layers, each of the alternating layers in the superlattice region having a thickness ranging from 0.5 nm to 20 nm; an active region comprising at least one light emitting active layer region overlying the superlattice region; the light emitting active layer region comprising a quantum well region or a double hetero-structure region; and a p-type region overlying the active region; wherein the active region is configured to emit electromagnetic radiation with a wavelength between 400 nm and 500 nm or between 500 nm and 660 nm.
11. The device of claim 10 , wherein the offcut of the orientation is between +/−5 degrees toward a c-plane and between +/−10 degrees toward an a-plane.
12. The device of claim 10 , wherein the active region comprises a plurality of quantum well regions comprising 1 to 7 quantum wells, each of the quantum wells comprising substantially InGaN; the plurality of quantum well regions ranging in thickness from 2 nm to 5 nm or from 5 nm to 10 nm; or wherein the active region comprises a double heterostructure region, the double heterostructure region ranging in thickness from about 10 nm to about 25 nm.
13. The device of claim 10 , wherein the superlattice region is characterized by an n-type dopant.
14. A laser device comprising: a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-1) orientation, a (30-31) orientation, a (20-2-1) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation; an n-type cladding region overlying the semipolar surface; an active region comprising at least one light emitting active layer region overlying the n-type cladding region; the light emitting active layer region comprising a quantum well region or a double hetero-structure region; and a p-type cladding region overlying the active region; a conductive oxide overlying the p-type cladding region; a laser stripe region comprising at least a portion of the p-type cladding region and the conductive oxide, the laser stripe region being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end; a first etched facet provided on the first end of the laser stripe region; and a second etched facet provided on the second end of the laser stripe region; wherein the laser device is configured to emit electromagnetic radiation with a peak wavelength of between 400 nm and 500 nm or between 500 nm and 560 nm.
15. The device of claim 14 , wherein the offcut of the orientation is between +/−5 degrees toward a c-plane and between +/−10 degrees toward an a-plane; and wherein the active region contains a plurality of quantum well regions comprising 1 to 7 quantum wells, each of the quantum wells comprising substantially InGaN; the plurality of quantum well regions ranging in thickness from 2 nm to 5 nm or from 5 nm to 10 nm; or wherein the active region contains a double heterostructure region; the double heterostructure region ranging in thickness from 10 nm to about 25 nm.
16. The device of claim 14 , wherein the first etched facet and the second etched facet are formed using a lithography and etching process.
17. The device of claim 14 , wherein the first etched facet and the second etched facet are formed using an etching process selected from a chemical assisted ion beam etching (CAIBE), inductively coupled plasma (ICP) etching, and reactive ion etching (RIE).
18. The device of claim 14 , wherein the conductive oxide comprises indium tin oxide (ITO).
19. The device of claim 14 , wherein the conductive oxide comprises zinc oxide (ZnO).
20. The device of claim 14 , wherein the conductive oxide comprises ITO and is formed from an electron cyclotron resonance deposition technique.
21. The device of claim 14 , wherein the conductive oxide is formed from an electron cyclotron resonance deposition technique at a process temperature below 200° C.
22. The device of claim 14 , wherein the conductive oxide is formed from an electron cyclotron resonance deposition technique at a process temperature below 200° C. wherein the substrate contains a photoresist layer during deposition to provide a lift-off technique.
23. The device of claim 14 , wherein the conductive oxide is ZnO and is formed from an electron cyclotron resonance deposition technique.
24. A green laser device comprising: a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-1) orientation, a (30-31) orientation, a (20-2-1) orientation, a (20-21) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation; an n-type cladding region overlying the semipolar surface; an active region comprising at least one light emitting active layer region overlying the n-type cladding region; the light emitting active layer region comprising a quantum well region or a double hetero-structure region; and a laser stripe region overlying the active region, the laser stripe region comprising conductive oxide and being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end; a first etched facet provided on the first end of the laser stripe region; and a second etched facet provided on the second end of the laser stripe region; wherein the green laser device is configured to emit electromagnetic radiation with a peak wavelength of between 500 nm and 580 nm.
25. The device of claim 24 , wherein the offcut of the orientation is between +/−5 degrees toward a c-plane and between +/−10 degrees toward an a-plane; wherein the active region contains a plurality of quantum well regions comprising 1 to 7 quantum wells, each of the quantum wells comprising substantially InGaN; the plurality of quantum well regions ranging in thickness from 2 nm to 5 nm or from 5 nm to 10 nm; or wherein the active region contains a double heterostructure region; the double heterostructure region ranging in thickness from about 10 nm to about 25 nm; and wherein the first etched facet and the second etched facet are formed using a lithography and etching process.
26. The device of claim 24 , comprising a p-type gallium and nitrogen containing layer overlying the active region and underlying the conductive oxide region.
27. A method for fabricating a laser device, the method comprising: providing a gallium and nitrogen containing material having a semipolar surface configured on one of either a (30-3-1) orientation, a (30-31) orientation, a (20-2-1) orientation, a (20-21) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation; forming an n-type cladding region overlying the semipolar surface; forming an active region comprising at least one light emitting active layer region overlying the n-type cladding region; the light emitting active layer region comprising a quantum well region or a double hetero-structure region; and depositing a conductive oxide overlying the active region, the conductive oxide being formed at a process temperature of less than 450° C. to maintain a substantially crystalline characteristic of the active region to emit electromagnetic radiation within a desired electroluminescence efficiency, the conductive oxide forming at least a part of a laser stripe region, the laser stripe region being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end; forming a first etched facet on the first end of the laser stripe region; and forming a second etched facet on the second end of the laser stripe region; wherein the laser device is configured to emit electromagnetic radiation with a peak wavelength of between 500 nm and 580 nm.
28. The method of claim 27 , wherein the conductive oxide is selected from indium tin oxide (ITO) and zinc oxide (ZnO).
29. The method of claim 27 wherein the conductive oxide is ITO and is formed from an electron cyclotron resonance deposition technique.
30. The method of claim 27 , wherein the conductive oxide is formed from an electron cyclotron resonance deposition technique at a process temperature below 200° C.
31. The method of claim 27 , wherein the conductive oxide is formed from an electron cyclotron resonance deposition technique at a process temperature below 200° C. wherein the substrate contains a photoresist layer during deposition to provide a lift-off technique.
32. The method of claim 27 , wherein the conductive oxide is ZnO and is formed from an electron cyclotron resonance deposition technique.
33. A green laser device comprising: a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-2) orientation, the semipolar surface having an offcut of the orientation; an n-type cladding region overlying the semipolar surface; an active region comprising at least one light emitting active layer region overlying the n-type cladding region; the light emitting active layer comprising a quantum well region or a double hetero-structure region; and a p-type cladding region overlying the active region, the p-type cladding region being formed from a low temperature GaN, AlInGaN, or AlGaN material; a laser stripe region formed overlying a portion of the semipolar surface, the laser stripe region being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end; a first etched facet provided on the first end of the laser stripe region; and a second etched facet provided on the second end of the laser stripe region; wherein the green laser device is configured to emit electromagnetic radiation with a peak wavelength between 500 nm and 580 nm.
34. The device of claim 33 , wherein the offcut of the orientation is between +/−5 degrees toward a c-plane and between +/−10 degrees toward an a-plane.
35. The device of claim 33 , wherein the active region comprises a plurality of quantum well regions comprising 1 to 7 quantum wells, each of the quantum wells comprising substantially InGaN; the plurality of quantum well regions ranging in thickness from 2 nm to 5 nm or from 5 nm to 10 nm; or wherein the active region comprises a double heterostructure region; and wherein the double heterostructure region ranging in thickness from 10 nm to about 25 nm.
36. The device of claim 33 , wherein the p-type cladding region is formed with an average growth rate of less than 1.5 angstroms per second.
37. A method for manufacturing a laser device, the method comprising: providing a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-2) orientation, the semipolar surface having an offcut of the orientation; forming an n-type cladding region overlying the semipolar surface; forming an active region comprising at least one light emitting active layer region overlying the n-type cladding region; the light emitting active layer comprising a quantum well region or a double hetero-structure region; and forming a p-type cladding region overlying the active region, the p-type cladding region being formed from a low temperature GaN, AlInGaN, or AlGaN material, the p-type cladding region being formed at a vicinity of or at a lower process temperature than a process temperature of forming the quantum well region or the double hetero-structure region; and forming a laser stripe region overlying a portion of the semipolar surface, the laser stripe region being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end, the first end comprising a first etched facet on the first end of the laser stripe region and the second end comprising a second etched facet on the second end of the laser stripe region; wherein the laser device is configured to emit electromagnetic radiation with a peak wavelength of between 500 nm and 580 nm.
38. The method of claim 37 , wherein the p-type cladding region is formed from the low temperature material at a temperature less than 75° C. greater than the temperature used to form the quantum well region or the double hetero-structure region.
39. The method of claim 37 , wherein the p-type cladding region is formed from the low temperature material at a temperature less than 50° C. greater than the temperature used to form the quantum well region or the double hetero-structure region.
40. The method of claim 37 , wherein the p-type cladding region is formed at a temperature equal to or less than the temperature used to form the quantum well region or a double hetero-structure region.
41. A laser device comprising: a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-31) orientation, a (30-31) orientation, a (20-2-1) orientation, a (20-21) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation, the offcut of the orientation characterized by an offcut toward an a-plane; the offcut toward the a-plane being greater in magnitude than 1 degree and less than about 12 degrees; an n-type cladding region overlying the semipolar surface; an active region comprising at least one light emitting active layer region overlying the n-type cladding region; the light emitting active layer region comprising a quantum well region or a double hetero-structure region; and a p-type cladding region overlying the active region; a laser stripe region overlying a portion of the semipolar surface, the laser stripe region being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end; a first facet provided on the first end of the laser stripe region; a second facet provided on the second end of the laser stripe region; and wherein the laser device is configured to emit an electromagnetic radiation with a peak wavelength of between 400 nm and 500 nm or between 500 nm and 580 nm.
42. The device of claim 41 , wherein the offcut toward the a-plane is characterized by the absolute magnitude of angle between 3 and 6 degrees.
43. The device of claim 41 , wherein the offcut toward the a-plane is characterized by the absolute magnitude of angle between 6 and 10 degrees.
44. The device of claim 41 , wherein the offcut of the orientation is characterized by an offcut toward a c-plane; the offcut toward the c-plane is between +/−5 degrees.
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October 12, 2012
March 3, 2015
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