An optical proximity sensor module includes a substrate, a light emitter mounted on a first surface of the substrate, the light emitter being operable to emit light at a first wavelength, and a light detector mounted on the first surface of the substrate, the light detector being operable to detect light at the first wavelength. The module includes an optics member disposed substantially parallel to the substrate, and a separation member disposed between the substrate and the optics member. The separation member may surround the light emitter and the light detector, and may include a wall portion that extends from the substrate to the optics member and that separates the light emitter and the light detector from one another. The separation member may be composed, for example, of a non-transparent polymer material containing a pigment, such as carbon black.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of fabricating a plurality of optical proximity sensor modules, the method comprising: providing a substrate wafer having a first surface on which a plurality of light emitters are mounted and a plurality of light detectors are mounted, wherein each light emitter is disposed adjacent a corresponding one of the light detectors, the light emitters and light detectors being mounted on the substrate wafer in an arrangement, and wherein the light emitters are operable to emit light at a first wavelength and the light detectors are operable to detect light at the first wavelength; providing a spacer wafer composed of a non-transparent polymer material containing carbon black, wherein the spacer wafer has openings in an arrangement substantially corresponding to the arrangement of the light emitters and light detectors on the substrate wafer; providing an optics wafer comprising a blocking portion that substantially attenuates or blocks incident light at the first wavelength, the optics member further comprising a plurality of first and second transparent portions that are transparent to light at the first wavelength, the first and second transparent portions being arranged in an arrangement substantially corresponding to the arrangement of the light emitters and light detectors on the substrate wafer; preparing a wafer stack in which the spacer wafer is arranged between the substrate wafer and the optics wafer such that the light emitters and light detectors are disposed between the substrate wafer and the optics wafer, wherein the light emitters and the light detectors are surrounded by respective portions of the spacer wafer, wherein respective portions of the spacer wafer separate each particular light emitter from its corresponding light detector, and wherein each first transparent portion of the optics wafer is disposed above a respective one of the light emitters and each second transparent portion of the optics wafer is disposed above a respective one of the light detectors; and separating the wafer stack into a plurality of modules, each of which includes one of the light emitters and one of the light detectors.
2. The method of claim 1 wherein the light emitters are light-emitting diodes and the light detector are photodiodes.
3. The method of claim 1 wherein the spacer wafer is substantially non-transparent to light emitted by the light emitter.
4. The method of claim 1 wherein the polymer material comprises an epoxy material and wherein the carbon black is embedded in the epoxy material.
5. The method of claim 1 wherein the spacer wafer is composed of a thermally-cured epoxy material.
6. The method of claim 1 wherein the polymer material of the spacer wafer contains at least 0.7% carbon black.
7. The method of claim 1 wherein the polymer material of the spacer wafer contains at least 0.8% carbon black and the spacer wafer is substantially non-transparent to light emitted by the light emitters.
8. The method of claim 1 wherein the amount of carbon black in the polymer material is sufficiently high such that transmission of light through the wall portion at a wavelength of light emitted by the light emitter is no greater than 0.1%.
9. The method of claim 1 wherein the amount of carbon black in the polymer material is sufficiently high such that absorbance of light in the wall portion at a wavelength of light emitted by the light emitter is at least 3.
10. The method of claim 1 wherein the polymer material comprises an acrylate, polyurethane, or silicone material.
11. The method of claim 1 wherein the optics wafer includes: first passive optical components attached at each of the first transparent portions; and second passive optical components attached at each of the second transparent portions.
12. The method of claim 11 wherein each of the first and second passive optical components comprises a lens.
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June 13, 2014
March 10, 2015
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