Image sensors

1. An image sensor comprising: a substrate including a visible light region and a non-visible light region; a first well and a second well having a first conductivity type, the first well and the second well being in the non-visible light region; a first gate and a second gate configured to receive voltages of opposite phases, respectively, concurrently and apply voltages to the first well and the second well, respectively; and a photoelectric conversion element between the first gate and the second gate, wherein the first gate and the second gate form a rake shape, the rake shape having a plurality of teeth such that the first gate and the second gate alternate.

2. The image sensor of claim 1 , further comprising: a third well between the first well and the second well in the substrate.

3. The image sensor of claim 2 , further comprising: a first barrier film having a second conductivity type, the first barrier film being along the third well.

4. The image sensor of claim 1 , further comprising: a first barrier film on the substrate, the first barrier film including a lower concentration of impurities than the first conductivity type.

5. The image sensor of claim 1 , wherein the non-visible light region is configured to receive non-visible light having a longer wavelength than visible light.

6. The image sensor of claim 5 , wherein the non-visible light is modulated.

7. The image sensor of claim 1 , wherein the visible light region is between portions of the non-visible light region.

8. The image sensor of claim 7 , wherein the non-visible light region has the rake shape or a spiral shape.

9. The image sensor of claim 1 , wherein the first gate and the second gate are doped with impurities of a second conductivity type.

10. The image sensor of claim 1 , wherein the visible light region includes a plurality of red color perception regions, a plurality of green color perception regions, and a plurality of blue color perception regions.

11. An image sensor comprising: a substrate; a first gate on or in the substrate and configured to receive a first signal; a second gate on or in the substrate and configured to receive a second signal having an opposite phase of a phase of the first signal concurrently with the first gate receiving the first signal; a first well having a first conductivity type and overlapped by the first gate; a second well having the first conductivity type and overlapped by the second gate; and a third well having the first conductivity type in the substrate, wherein the first gate and the second gate form a rake shape, the rake shape having a plurality of teeth such that the first gate and the second gate alternate.

12. The image sensor of claim 11 , further comprising: a first barrier film having a second conductivity type along the third well in the substrate.

13. The image sensor of claim 11 , further comprising: a first barrier film on the substrate having a lower concentration of impurities than the first conductivity type.

14. The image sensor of claim 11 , wherein the third well is between the first gate and the second gate.

15. The image sensor of claim 11 , wherein an area of the first gate is equal to an area of the second gate.

16. The image sensor of claim 11 , wherein the third well is between the first well and the second well.

17. The image sensor of claim 11 , further comprising: a black filter overlapping each of the first well and the second well and configured to block visible light.

18. The image sensor of claim 11 , further comprising: a color filter overlapping the third well.

19. The image sensor of claim 18 , wherein the color filter comprises a white filter.