A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A compliant transfer head array comprising: a base substrate; an insulating layer on the base substrate; a patterned device layer on the insulating layer, the patterned device layer comprising: a trace interconnect integrally formed with an array of electrodes; wherein each electrode includes a mesa structure protruding above the trace interconnect, and each electrode is deflectable toward the base substrate; and a dielectric layer covering a top surface of each mesa structure.
2. The compliant transfer head array of claim 1 , wherein the trace interconnect runs through a working area of the compliant transfer head array including the array of electrodes.
3. The compliant transfer head array of claim 1 , wherein each electrode is deflectable into a cavity in the base substrate.
4. The compliant transfer head array of claim 3 , wherein each electrode is deflectable into the same cavity in the base substrate.
5. The compliant transfer head array of claim 3 , wherein the cavity wraps around an end of the trace interconnect.
6. The compliant transfer head array of claim 3 , wherein each electrode is deflectable into a separate cavity in the base substrate.
7. The compliant transfer head array of claim 1 , further comprising a first dielectric layer covering a top surface of the trace interconnect.
8. The compliant transfer head array of claim 7 , wherein the dielectric layer overlaps a top surface of the first dielectric layer.
9. The compliant transfer head array of claim 8 , wherein the dielectric layer has a higher dielectric constant or dielectric breakdown strength than the first dielectric layer.
10. The compliant transfer head array of claim 1 , wherein each electrode further comprises an electrode lead spanning between a corresponding mesa structure and the trace interconnect.
11. The compliant transfer head array of claim 10 , wherein the electrode lead for each electrode runs perpendicular to trace interconnect.
12. The compliant transfer head array of claim 10 , wherein each electrode extends from the trace interconnect in a single sided clamped cantilever beam configuration.
13. The compliant transfer head array of claim 12 , wherein the patterned device layer further comprises a second trace interconnect, and each electrode further comprises a second electrode lead spanning between a corresponding mesa structure and the second trace interconnect.
14. The compliant transfer head array of claim 13 , wherein each electrode extends between the trace interconnect and the second trace interconnect in a double sided clamped cantilever beam configuration.
15. The compliant transfer head array of claim 12 , wherein the patterned device layer further comprise a second array of second electrodes integrally formed with the trace interconnect, wherein each second electrode includes a second mesa structure protruding above the trace interconnect, and each second electrode is deflectable toward the base substrate.
16. The compliant transfer head array of claim 15 , wherein the array of electrodes and second array of second electrodes extend in opposite directions from the trace interconnect.
17. The compliant transfer head array of claim 16 , wherein the array of electrodes and second array of electrodes are deflectable into a cavity in the base substrate.
18. The compliant transfer head array of claim 17 , wherein the array of electrodes and second array of electrodes are deflectable into the same cavity in the base substrate.
19. The compliant transfer head array of claim 17 , wherein the array of electrodes and second array of electrodes are deflectable into different cavities in the base substrate.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
February 5, 2014
April 7, 2015
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