Power semiconductor module and method of manufacturing the same

1. A power semiconductor module of resin-sealed type, comprising: a plurality of unit structures, each said unit structure including a plurality of semiconductor chips each having a first chip main surface and a second chip main surface, and a heat spreader having conductivity, to which said first chip main surfaces of said plurality of semiconductor chips are bonded with a first bonding member; an insulating member located on a side opposite to said plurality of semiconductor chips when viewed from said heat spreader; a plurality of electrodes including a plurality of main electrodes, each said main electrode bonded to a predetermined portion with a second bonding member, said plurality of main electrodes including a plurality of first electrodes bonded to said second chip main surfaces of predetermined chips among said plurality of semiconductor chips with said second bonding member, and a second electrode that is bonded to a chip-mounting surface of said heat spreader with said second bonding member and that projects out of said molding resin to have said external terminal portion; an insulating substrate including an insulating layer located on a side opposite to said plurality of semiconductor chips when viewed from said plurality of first electrodes, and a first conductive layer located between said insulating layer and said plurality of first electrodes and bonded to said plurality of first electrodes with a third bonding member; and a molding resin sealing said plurality of unit structures and said plurality of electrodes in a state in which a surface of said insulating member on a side far from said plurality of semiconductor chips, a surface of said insulating substrate on the side far from said plurality of semiconductor chips, and external terminal portions of said plurality of electrodes are exposed, wherein said plurality of electrodes, including said plurality of main electrodes, are provided by a lead frame in which said plurality of electrodes are formed in advance, said plurality of first electrodes include a series-connection-type first electrode bonded to said second chip main surface of one unit structure and bonded to said chip-mounting surface of said heat spreader of the other one or more unit structures, and said series-connection-type first electrode is provided by a single member cut out from said lead frame.

2. The power semiconductor module according to claim 1 , wherein said plurality of first electrodes each includes a surface bonded to said first conductive layer of said insulating substrate on the same plane.

3. The power semiconductor module according to claim 1 , wherein said first conductive layer of said insulating substrate is divided into a plurality of portions.

4. The power semiconductor module according to claim 3 , wherein the number of said plurality of portions of said first conductive layer is equal to or larger than the number of said plurality of first electrodes.

5. The power semiconductor module according to claim 1 , further comprising at least one wire protruding toward said insulating substrate side when viewed from said heat spreader and including a loop top at a position that does not reach said insulating substrate, wherein said insulating substrate also extends above said at least one wire.

6. The power semiconductor module according to claim 1 , wherein said insulating substrate further includes a second conductive layer on a side opposite to said first conductive layer when viewed from said insulating layer, and said first conductive layer is thicker than said second conductive layer.

7. The power semiconductor module according to claim 1 , wherein said plurality of first electrodes have a thickness distribution in which portions that are bonded to said plurality of semiconductor chips are thicker than portions that are not bonded to said plurality of semiconductor chips.

8. The power semiconductor module according to claim 1 , wherein said third bonding member has a melting point lower than melting points of said first bonding member and said second bonding member.

9. The power semiconductor module according to claim 1 , wherein said plurality of semiconductor chips include silicon carbide (SiC).

10. A method of manufacturing the power semiconductor module according to claim 1 , comprising the steps of: (a) bonding said plurality of semiconductor chips onto said heat spreader with said first bonding member; (b) simultaneously bonding predetermined electrodes, including said first electrode, among said plurality of electrodes formed in said lead frame in advance to predetermined portions with said second bonding member; and (c) cutting said power semiconductor module from said lead frame after the said molding resin is formed.

11. The power semiconductor module according to claim 1 , wherein said plurality of first electrodes include a projecting-type first electrode that projects out of said molding resin to have said external terminal portion, said external terminal portion of said projecting-type first electrode and said external terminal portion of said second electrode are located on the same plane which is parallel to the exposed surface of said insulating member.