Semiconductor device and method for fabricating semiconductor device

1. A semiconductor device comprising: an IGBT element region and a diode element region that are formed in one semiconductor substrate, wherein a first conductivity type collector layer, a second conductivity type drift layer, and a first conductivity type body layer are sequentially laminated in the IGBT element region, a first trench electrode that penetrates the body layer from a surface of the body layer, projects into the drift layer and is surrounded by an insulating film is formed, a second conductivity type emitter region is formed at a particular area that makes contact with the first trench electrode via the insulating film and is exposed at a surface of the semiconductor substrate, the emitter region being separated from the drift layer by the body layer, a second conductivity type cathode layer, a second conductivity type drift layer, and a first conductivity type anode layer are sequentially laminated in the diode element region, a second trench electrode that penetrates the anode layer from a surface of the anode layer, projects into the drift layer and is surrounded by an insulating film is formed, when the surface of the body layer on which an opening portion of the first trench electrode is formed and the surface of the anode layer on which an opening portion of the second trench electrode is formed are observed, a total length, per unit area of the diode element region, of a borderline configuring the opening portion of the second trench electrode is longer than a total length, per unit area of the IGBT element region, of a borderline configuring the opening portion of the first trench electrode, and a concentration of heavy metal included in the drift layer of the diode element region is higher than a concentration of heavy metal included in the drift layer of the IGBT element region.

2. The semiconductor device according to claim 1 , further comprising: an electrode including the heavy metal, wherein the electrode makes contact with at least a portion of a semiconductor layer disposed within the diode element region.

3. The semiconductor device according to claim 2 , wherein a first distance between a contacting region and the emitter region disposed within the IGBT element region is equal to or more than a second distance, the contacting region being a region at which the electrode including the heavy metal and the semiconductor layer disposed within the diode element region make contact, and the second distance being a distance determined by a sum of a thickness of the anode layer of the diode element region and a thickness of the drift layer of the diode element region.

4. A semiconductor device comprising: an IGBT element region and a diode element region that are formed in one semiconductor substrate, wherein a first conductivity type collector layer, a second conductivity type drift layer, and a first conductivity type body layer are sequentially laminated in the IGBT element region, a first trench electrode that penetrates the body layer from a surface of the body layer, projects into the drift layer and is surrounded by an insulating film is formed, a second conductivity type emitter region is formed at a particular area that makes contact with the first trench electrode via the insulating film and is exposed at a surface of the semiconductor substrate, the emitter region being separated from the drift layer by the body layer, a second conductivity type cathode layer, a second conductivity type drift layer, and a first conductivity type anode layer are sequentially laminated in the diode element region, a second trench electrode that penetrates the anode layer from a surface of the anode layer, projects into the drift layer and is surrounded by an insulating film is formed, and when the surface of the body layer on which an opening portion of the first trench electrode is formed and the surface of the anode layer on which an opening portion of the second trench electrode is formed are observed, a total length, per unit area of the diode element region, of a borderline configuring the opening portion of the second trench electrode is longer than a total length, per unit area of the IGBT element region, of a borderline configuring the opening portion of the first trench electrode.

5. A method for fabricating a semiconductor device that comprises an IGBT element region and a diode element region in one semiconductor substrate, the method comprising: a first forming process of forming a first trench electrode in the IGBT element region; a second forming process of forming a second trench electrode in the diode element region; a contacting process of causing a wafer make contact with a wafer holding table including heavy metal; and a heating process of heating the wafer after the contacting process, wherein when the surface of the wafer to which the first forming process and the second forming process have been performed is observed, a total length, per unit area of the diode element region, of a borderline configuring an opening portion of the second trench electrode is longer than a total length, per unit area of the IGBT element region, of a borderline configuring an opening portion of the first trench electrode, and the first forming process and the second forming process are performed prior to the heating process.

6. The method according to claim 5 , further comprising: a polishing process of polishing a back surface of the wafer, wherein the polishing process is performed prior to the contacting process.