A memory element has a layered structure, including a memory layer that has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a Co—Fe—B magnetic layer, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, a first oxide layer and a second oxide layer.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A memory element, comprising: a layered structure, comprising: a memory layer having a magnetization, wherein the magnetization direction is configured to be changed depending on information by applying a current in a lamination direction of the layered structure to record the information in the memory layer; a magnetization-fixed layer; an intermediate layer comprising a non-magnetic material and disposed between the memory layer and the magnetization-fixed layer; and an oxide layer in contact with a first surface of the memory layer, wherein a second surface of the memory layer opposed to the first surface is in contact with the intermediate layer, and wherein at least a portion of the oxide layer at the interface of the oxide layer and the memory layer comprises an Li-based oxide.
2. The memory element of claim 1 , a memory layer having the magnetization direction substantially perpendicular to a film face.
3. The memory element of claim 1 , wherein the memory layer comprises Co-Fe-B.
4. The memory element of claim 3 , wherein the memory layer is a laminated structure comprising: a Co—Fe—B layer; and at least one non-magnetic layer.
5. The memory element of claim 4 , wherein the at least one non-magnetic layer comprises Ta.
6. The memory element of claim 1 , wherein: wherein the magnetization-fixed layer comprises Co—Fe—B.
7. The memory element of claim 1 , wherein the intermediate layer comprises an insulating material.
8. The memory element of claim 7 , wherein the intermediate layer comprises an MgO film.
9. The memory element of claim 8 , wherein: the MgO film is crystallized; and a crystal orientation of the MgO film is maintained in the (001) direction.
10. The memory element of claim 1 , wherein the intermediate layer comprises a semiconductor material.
11. The memory element of claim 10 , wherein the semiconductor material is selected from the group consisting of aluminum oxide, aluminum nitride, SiO 2 , Bi 2 O 3 , MgF 2 , CaF, SiTiO 2 , AlLaO 3 , and Al—N—O.
12. The memory element of claim 1 , wherein the intermediate layer comprises a metallic material.
13. The memory element of claim 1 , wherein the Li based oxide includes an oxide of Li and at least one element selected from the group consisting of Al, Si, Cu, Mg, P, B and C.
14. The memory element of claim 1 , wherein a thickness of the memory layer is between 0.5 nm and 30 nm, inclusive.
15. The memory element of claim 1 , wherein a thickness of the magnetization-fixed layer is between 0.5 nm and 30 nm, inclusive.
16. The memory element of claim 1 , wherein the magnetization-fixed layer is a first magnetization-fixed layer of a plurality of magnetization-fixed layers.
17. The memory element of claim 16 , wherein the memory layer is disposed between the first magnetization-fixed layer and a second magnetization-fixed layer of the plurality of magnetization-fixed layers.
18. The memory element of claim 17 , wherein the intermediate layer is a first intermediate layer of a plurality of intermediate layers.
19. The memory element of claim 18 , wherein a second intermediate layer of the plurality of intermediate layers comprises a non-magnetic material and is disposed between the memory layer and the second magnetization-fixed layer.
20. A memory apparatus, comprising: a memory element having a layered structure, comprising: a memory layer having a magnetization wherein the magnetization direction is configured to be changed depending on information by applying a current in a lamination direction of the layered structure to record the information in the memory layer; a magnetization-fixed layer; an intermediate layer comprising a non-magnetic material and disposed between the memory layer and the magnetization-fixed layer; and an oxide layer in contact with a first surface of the memory layer, wherein a second surface of the memory layer opposed to the first surface is in contact with the intermediate layer, and wherein at least a portion of the oxide layer at the interface of the oxide layer and the memory layer comprises an Li-based oxide.
21. The memory apparatus of claim 20 , wherein the memory layer is a laminated structure comprising: a Co—Fe—B layer; and at least one non-magnetic layer.
22. The memory apparatus of claim 20 , a memory layer having the magnetization direction substantially perpendicular to a film face.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
February 20, 2014
June 30, 2015
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.