A semiconductor laser device having stable heat dissipation property is provided. The semiconductor laser device includes a semiconductor laser element, a mounting body on which the semiconductor laser element is mounted, and a base body connected to the mounting body. The base body has a recess configured to engage with the mounting body and a through portion penetrating through a part of a bottom of the recess. In the specification, the remainder, which is a part of the bottom of the recess except for the through portion has a thickness equal or less than half of the largest thickness of the base body. The lowermost surface of the mounting body is spaced apart from the lowermost surface of the base body through the remainder.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor laser device comprising: a semiconductor laser element, a mounting body having the semiconductor laser element mounted thereon, and a base body connected to the mounting body; wherein the base body comprises: a recess configured to engage with the mounting body, and a through portion penetrating through a part of a bottom of the recess, wherein a remainder of the bottom, except the through portion, has a thickness of half or less than a maximum thickness of the base body, wherein a lowermost surface of the mounting body is spaced apart from a lowermost surface of the base body through the remainder of the bottom, wherein an entirety of the lowermost surface of the mounting body is located above an uppermost surface of the remainder, and wherein the semiconductor laser element is mounted on the mounting body at a location above the uppermost surface of the remainder.
2. The semiconductor laser device according to claim 1 , wherein the semiconductor laser element is a multi-mode semiconductor laser element.
3. The semiconductor laser device according to claim 1 , wherein when viewed from above, the through portion is formed spaced apart from a periphery of the bottom.
4. The semiconductor laser device according to claim 1 , wherein the thickness of the remainder of the bottom is 5% or greater and 30% or less of the maximum thickness of the base body.
5. The semiconductor laser device according to claim 1 , wherein when viewed from above, an area of the through portion is 5% or greater and 50% or less of an area of the bottom.
6. The semiconductor laser device according to claim 1 , wherein the base body includes iron.
7. The semiconductor laser device according to claim 1 , wherein the mounting body includes copper.
8. The semiconductor laser device according to claim 1 , wherein an interposing body is interposed between the semiconductor laser element and the mounting body.
9. The semiconductor laser device according to claim 8 , wherein the interposing body is made of aluminum nitride.
10. The semiconductor laser device according to claim 2 , wherein when viewed from above, the through portion is formed spaced apart from a periphery of the bottom.
11. The semiconductor laser device according to claim 2 , wherein the thickness of the remainder of the bottom is 5% or greater and 30% or less of the maximum thickness of the base body.
12. The semiconductor laser device according to claim 2 , wherein when viewed from above, an area of the through portion is 5% or greater and 50% or less of an area of the bottom.
13. The semiconductor laser device according to claim 2 , wherein the base body includes iron.
14. The semiconductor laser device according to claim 2 , wherein the mounting body includes copper.
15. The semiconductor laser device according to claim 2 , wherein an interposing body is interposed between the semiconductor laser element and the mounting body.
16. The semiconductor laser device according to claim 15 , wherein the interposing body is made of aluminum nitride.
17. The semiconductor laser device according to claim 1 , wherein the mounting body is made of a single, integral body having a mounting surface on which the semiconductor laser element is mounted.
18. The semiconductor laser device according to claim 17 , wherein the mounting surface is a flat surface that extends continuously from the uppermost surface of the remainder to a location above an uppermost surface of the base body.
19. The semiconductor laser device according to claim 18 , wherein the mounting body includes a bottom surface that faces the uppermost surface of the remainder, a top surface opposing the bottom surface, the mounting surface extending from the bottom surface of the mounting body to the top surface of the mounting body, and a curved surface extending from the bottom surface of the mounting body to the top surface of the mounting body.
20. The semiconductor laser device according to claim 19 , wherein the mounting body has a shape of a horizontal cylindrical segment.
21. A semiconductor laser device comprising: a semiconductor laser element, a mounting body having the semiconductor laser element mounted thereon, and a base body connected to the mounting body; wherein the base body comprises: a recess configured to engage with the mounting body, and a through portion penetrating through a part of a bottom of the recess, wherein a remainder of the bottom, except the through portion, has a thickness of half or less than a maximum thickness of the base body, wherein a lowermost surface of the mounting body is spaced apart from a lowermost surface of the base body through the remainder of the bottom, wherein an entirety of the lowermost surface of the mounting body is located above an uppermost surface of the remainder, wherein the mounting body is made of a single, integral body having a mounting surface on which the semiconductor laser element is mounted, and wherein the mounting surface is a flat surface that extends continuously from the uppermost surface of the remainder to a location above an uppermost surface of the base body.
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January 23, 2013
July 7, 2015
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