Semiconductor device with thick bottom metal and preparation method thereof

1. A preparation method of a semiconductor device with a thick bottom metal comprises the following steps: providing a lead frame including a plurality of die paddles, wherein the adjacent die paddles are connected to each other by one or more connecting parts, each connecting part comprises a support part arranged at a back surface of the connecting part and extending along a direction away from the back surface, wherein bottom surfaces of all support parts are substantially coplanar; mounting a semiconductor chip covered with a top plastic package layer at a front chip surface and a back metal layer at a back chip surface opposite to the front chip surface on a front paddle surface of each die paddle, wherein the back metal layer is directly attached onto the front paddle surface of the die paddle; forming a plastic package body with a plastic package material covering the die paddles, the connecting part and the semiconductor chip with the top plastic package layer and the back metal layer, wherein an upper surface of the top plastic package layer and the bottom surfaces of the support part are exposed from the plastic package body; and cutting off a portion of the plastic package body and connecting parts between the adjacent die paddles to separate individual semiconductor devices each includes a semiconductor chip with the top plastic package layer and the back metal layer, wherein a thickness of the die paddle is less than a distance between the bottom surface of the support part and the front surface of the die paddle such that the back surface of the die paddle is covered with a bottom plastic package layer formed by cutting the plastic package body covering the back surface of the die paddle.

2. The method of claim 1 further comprises attaching a first adhesive film at the bottom surface of each support part and a second adhesive film on the upper surface of the top plastic package layer before forming the plastic package body and removing the first and second adhesive films after forming the plastic package body.

3. The method of claim 1 further comprising grinding from a top surface of the plastic package body to a surface coplanar with the upper surface of the top plastic package layer to remove the plastic package material covering on the upper surface of the top plastic package layer after forming the plastic package body.

4. The method of claim 1 , wherein cutting off a portion of the plastic package body and a connecting part between the adjacent die paddles forms a first plastic package body portion covering the sidewalls of the semiconductor chip, the top plastic package layer and the back metal layer.

5. The method of claim 4 , wherein cutting off a portion of the plastic package body and a connecting part between the adjacent die paddles forms a second plastic package body portion covering the sidewalls of the die paddle.

6. The method of claim 4 , wherein portions of the plastic package body covering sidewalls of the die paddle are completely cut off such that the sidewalls of the die paddle are exposed.

7. A preparation method of a semiconductor device with a thick bottom metal comprises the following steps: providing a lead frame including a plurality of die paddles, wherein the adjacent die paddles are connected to each other by one or more connecting parts, each connecting part comprises a support part arranged at a back surface of the connecting part and extending along a direction away from the back surface, wherein bottom surfaces of all support parts are substantially coplanar; mounting a semiconductor chip covered with a top plastic package layer at a front chip surface and a back metal layer at a back chip surface opposite to the front chip surface on a front paddle surface of each die paddle, wherein the back metal layer is directly attached onto the front paddle surface of the die paddle; forming a plastic package body with a plastic package material covering the die paddles, the connecting part and the semiconductor chip with the top plastic package layer and the back metal layer, wherein an upper surface of the top plastic package layer and the bottom surfaces of the support part are exposed from the plastic package body; and cutting off a portion of the plastic package body and connecting parts between the adjacent die paddles to separate individual semiconductor devices each includes a semiconductor chip with the to plastic package layer and the back metal layer, wherein a thickness of the die paddle is equal to a distance between the bottom surface of the support part and the front surface of the die paddle with the back surface of the die paddle being coplanar with the bottom surface of the support part, and wherein the back surface of the die paddle is exposed from the plastic package body.

8. The method of claim 7 , wherein the die paddle further comprises a groove formed at an edge adjacent the support part at the back surface of the die paddle, said groove forming a ring surrounding a central portion of the die paddle and being filled with plastic package material after forming the plastic package body; a ring of plastic package body is formed at the edge at the back surface of the die paddle after the cutting process.

9. The method of claim 7 , wherein the connecting part and the support part form a “T-shaped” structure.

10. The method of claim 7 , wherein the support part has a trench structure including a bottom portion substantially parallel to the die paddle and two sidewalls connected at each side of the bottom portion.