Current-perpendicular-to-plane magnetoresistive read sensor with grooved contact and free layers

1. A current-perpendicular-to-plane magnetoresistive read sensor, comprising: a stack of layers, the layers extending along a stacking direction of the stack; and an edge surface of the stack that is parallel to the stacking direction and further parallel to and forms at least part of a bearing surface of the read sensor, the bearing surface designed to face a recording medium, in operation; the stack of layers further comprising: a first contact layer; a ferromagnetic free layer having magnetic orientation that varies according to an applied magnetic field, the free layer above the first contact layer; a non-magnetic layer above the ferromagnetic layer; a ferromagnetic spin injection layer above the non-magnetic layer; and a second contact layer above the spin injection layer, such that a current can flow between the second contact layer and the first contact layer along a current-perpendicular-to-plane direction, parallel to the stacking direction; wherein the stack of layers further comprises a series of structures, such that each of the structures of the series is formed in both the first contact layer and the free layer, an edge surface of each of the structures level with the edge surface of the stack, and the series of structures extends along a direction that is parallel to the bearing surface and perpendicular to the stacking direction; and wherein the structures of the free layer and the first contact layer are defined by grooves, each having a main direction of extension that is perpendicular to the stacking direction, and transverse to the bearing surface.

2. The sensor of claim 1 , wherein the grooves are formed through both the first contact layer and the free layer, at least up to the non-magnetic layer, wherein the structures comprise, each, a portion of the contact layer and a portion of the free layer.

3. The sensor of claim 2 , wherein a depth of the grooves extends through both the first contact layer and the free layer, at least partly into the non-magnetic layer.

4. The sensor of claim 1 , wherein: the sensor is a CPP tunneling magneto resistive read sensor; and the non-magnetic layer is an electrically insulating tunnel barrier layer.

5. The sensor of claim 1 , wherein: the sensor is a CPP giant magneto resistive read sensor; and the non-magnetic layer is electrically conducting.

6. The sensor of claim 1 , wherein the sensor is a tape read sensor, and the bearing surface is a tape bearing surface.

7. The sensor of claim 1 , wherein the sensor is a hard drive read sensor, and the bearing surface is an air bearing surface.

8. The sensor of claim 1 , further comprising additional layers that are one of: contiguous or parallel with layers of the stack, including at least two shield layers, with at least one of the shield layers on each side of the stack of layer, and parallel therewith.

9. A current-perpendicular-to-plane magnetoresistive read sensor, comprising: a first stack of layers, the layers extending along a stacking direction of the stack; and an edge surface of the stack that is parallel to the stacking direction and further parallel to and forms at least part of a bearing surface of the read sensor, the bearing surface designed to face a recording medium, in operation; the first stack of layers further comprising: a first contact layer; a ferromagnetic free layer having magnetic orientation that varies according to an applied magnetic field, the free layer above the first contact layer; a non-magnetic layer above the ferromagnetic layer; a ferromagnetic spin injection layer above the non-magnetic layer; and a second contact layer above the spin injection layer, such that a current can flow between the second contact layer and the first contact layer along a current-perpendicular-to-plane direction, parallel to the stacking direction; and wherein the first stack of layers further comprises a series of structures, such that each of the structures of the series is formed in both the first contact layer and the free layer, an edge surface of each of the structures level with the edge surface of the first stack, and the series of structures extends along a direction that is parallel to the bearing surface and perpendicular to the stacking direction; the read sensor further comprising: a second stack of layers, having structures similar to structures of the first stack of layers; and at least three shield layers, wherein the first stack of layers and the second stack of layers are superimposed, the structures of the first stack shifted with respect to structures of the second stack along the direction parallel to the bearing surface and perpendicular to the stacking direction, at least one of the shield layers on each side of each of the first and second stacks, and parallel therewith.

10. The sensor of claim 9 , wherein only one shield layer is disposed between the first stack and the second stack.

11. A current-perpendicular-to-plane magnetoresistive read sensor, comprising: several stack of layers, the layers extending along a stacking direction of an individual stack; and an edge surface of the stack that is parallel to the stacking direction and further parallel to and forms at least part of a bearing surface of the read sensor, the bearing surface designed to face a recording medium, in operation; each stack of layers further comprising: a first contact layer; a ferromagnetic free layer having magnetic orientation that varies according to an applied magnetic field, the free layer above the first contact layer; a non-magnetic layer above the ferromagnetic layer; a ferromagnetic spin injection layer above the non-magnetic layer; and a second contact layer above the spin injection layer, such that a current can flow between the second contact layer and the first contact layer along a current-perpendicular-to-plane direction, parallel to the stacking direction; and wherein the stack of layers further comprises a series of structures, such that each of the structures of the series is formed in both the first contact layer and the free layer, an edge surface of each of the structures level with the edge surface of the stack, and the series of structures extends along a direction that is parallel to the bearing surface and perpendicular to the stacking direction; wherein the several stacks are arranged as two superimposed linear arrays of stacks of layers, the structures of the first of the linear arrays shifted with respect to structures of the second one of the two arrays, along the direction parallel to the bearing surface and perpendicular to the stacking direction.

12. A method of fabricating a read sensor, the method comprising: forming a stack of layers, wherein the stack of layers extending along a stacking direction of the stack, and an edge surface of the stack that is parallel to the stacking direction is further parallel to and forms at least part of a bearing surface of the read sensor, the bearing surface designed to face a recording medium, in operation; and wherein the stack of layers comprises: a first contact layer; a free layer, ferromagnetic, whose magnetic orientation varies according to an applied magnetic field, the free layer above the first contact layer; a non-magnetic layer above the ferromagnetic layer; a spin injection layer, ferromagnetic, above the non-magnetic layer; and a second contact layer above the spin injection layer, such that a current can flow between the second contact layer and the first contact layer along a current-perpendicular-to-plane direction, parallel to the stacking direction; and forming a series of structures that extend along a direction that is parallel to the bearing surface and perpendicular to the stacking direction, wherein each of the structures is formed in at least the first contact layer and the free layer, such that an edge surface of each of the structures remains level with the edge surface of the stack; wherein forming the structures comprises forming grooves, each having a main direction of extension that is perpendicular to both the bearing surface and the stacking direction, wherein the grooves are preferably formed through both the first contact layer and the free layer, a depth of the grooves extending at least up to the non-magnetic layer, the structures comprising, each, a portion of the contact layer and a portion of the free layer.

13. The method of claim 12 , wherein the grooves are formed with a depth that extends at least partly into the non-magnetic layer.