A semiconductor device (ST) includes a substrate (11), a gate electrode (12b), a gate insulating film (13b), an oxide semiconductor film (14b) including a channel part (14bc) formed in a position facing the gate electrode (12b), a source electrode (15bs), and a drain electrode (15bd). The source electrode (15bs) and the drain electrode (15bd) is arranged so as not to overlap with the gate electrode (12b) as viewed in the plane. A region adjacent to the gate electrode (12b) and the source electrode (15bs) and a region adjacent to the gate electrode (12b) and the drain electrode (15bd) are, in a region where the source electrode (15bs) and the drain electrode (15bd) does not overlap with the gate electrode (12b), processed such that resistance in a region of the oxide semiconductor film (14b) including a surface thereof is reduced.
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March 2, 2011
September 1, 2015
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