A method of manufacturing a semiconductor device is provided, including: forming an oxynitride film having a specific film thickness on a substrate by performing multiple numbers of times a cycle of: forming a specific element-containing layer on the substrate by supplying a source gas containing a specific element into a processing vessel in which the substrate is housed; changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas into the processing vessel; and changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas and an inert gas into the processing vessel, with this sequence as one cycle, wherein a composition ratio of the oxynitride film having the specific film thickness is controlled by controlling a partial pressure of the oxygen-containing gas in the processing vessel, in changing the nitride layer to the oxynitride layer.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of manufacturing a semiconductor device, comprising: forming an oxynitride film having a specific film thickness on a substrate by performing multiple numbers of times a cycle of: forming a specific element-containing layer on the substrate by supplying a source gas containing a specific element into a processing vessel in which the substrate is housed; and changing the specific element-containing layer to an oxynitride layer by supplying a nitrogen-containing gas, an oxygen-containing gas and an inert gas into the processing vessel simultaneously, with this sequence as one cycle, wherein a composition ratio of the oxynitride film having the specific film thickness is controlled and a wet etching rate of the oxynitride film having the specific film thickness is controlled to be 1.5 to 20nm/min, by controlling a partial pressure of the oxygen-containing gas in the processing vessel, in changing the specific element-containing layer to the oxynitride layer.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein the nitrogen-containing gas, the oxygen-containing gas and the inert gas are supplied through a multiple-hole nozzle having a plurality of gas supply holes on a side face thereof.
3. The method of manufacturing a semiconductor device according to claim 2 , wherein a plurality of substrates are arranged in the processing vessel, and the multiple-hole nozzle is disposed in a region horizontally surrounding a substrate arrangement region in which the plurality of substrates are arranged.
4. The method of manufacturing a semiconductor device according to claim 3 , wherein the multiple-hole nozzle is provided along the substrate arrangement region so as to rise from at least one end side of the substrate arrangement region toward the other end side.
5. The method of manufacturing a semiconductor device according to claim 4 , wherein a total flow rate of a mixed gas of the nitrogen-containing gas, the oxygen-containing gas and the inert gas supplied into the multiple-hole nozzle, is set to a flow rate of a minimal requirement or more for obtaining a uniform flow rate of the mixed gas sprayed from each of the gas supply holes of the multiple-hole nozzle.
6. The method of manufacturing a semiconductor device according to claim 5 , wherein the partial pressure of the oxygen-containing gas in the processing vessel is controlled by controlling a supply flow rate of the inert gas.
7. The method of manufacturing a semiconductor device according to claim 6 , wherein the partial pressure of the oxygen-containing gas in the processing vessel is controlled by controlling the supply flow rate of the inert gas in a state that a pressure in the processing vessel is set in a specific pressure zone.
8. The method of manufacturing a semiconductor device according to claim 1 , wherein by controlling the partial pressure of the oxygen-containing gas in the processing vessel in changing the specific element-containing layer to the oxynitride layer, a ratio of an oxygen-component and a nitrogen-component of the oxynitride film having the specific film thickness is controlled.
9. A substrate processing method, comprising: forming an oxynitride film having a specific film thickness on a substrate by performing multiple numbers of times a cycle of: forming a specific element-containing layer on the substrate by supplying a source gas containing a specific element into a processing vessel in which the substrate is housed; and changing the specific element-containing layer to an oxynitride layer by supplying a nitrogen-containing gas, an oxygen-containing gas and an inert gas into the processing vessel simultaneously, with this sequence as one cycle, wherein a composition ratio of the oxynitride film having the specific film thickness is controlled and a wet etching rate of the oxynitride film having the specific film thickness is controlled to be 1.5 to 20nm/min, by controlling a partial pressure of the oxygen-containing gas in the processing vessel, in changing the specific element-containing layer to the oxynitride layer.
10. A substrate processing apparatus, comprising: a processing vessel configured to house a substrate; a source gas supply system configured to supply a source gas containing a specific element into the processing vessel; a nitrogen-containing gas supply system configured to supply a nitrogen-containing gas into the processing vessel; an oxygen-containing gas supply system configured to supply an oxygen-containing gas into the processing vessel; an inert gas supply system configured to supply an inert gas into the processing vessel; a partial pressure control system configured to control a partial pressure of a gas in the processing vessel; and a control part configured to control the source gas supply system, the nitrogen-containing gas supply system, the oxygen-containing gas supply system, the inert gas supply system, and the partial pressure control system, so as to perform processing of forming an oxynitride film having a specific film thickness on the substrate by performing multiple numbers of times a cycle of a process of forming a specific element-containing layer on the substrate by supplying the source gas into the processing vessel in which the substrate is housed, and a process of changing the specific element-containing layer to an oxynitride layer by supplying the nitrogen-containing gas, the oxygen-containing gas and the inert gas into the processing vessel simultaneously, with these processes as one cycle, and so as to control a composition ratio of the oxynitride film having the specific film thickness and control a wet etching rate of the oxynitride film having the specific film thickness to be 1.5 to 20 nm/min, by controlling a partial pressure of the oxygen-containing gas in the processing vessel, in the process of changing the specific element-containing layer to the oxynitride layer.
11. The method of manufacturing a semiconductor device according to claim 1 , wherein a refractive index of the oxynitride film having the specific film thickness is controlled by controlling the partial pressure of the oxygen-containing gas in the processing vessel, in changing the specific element-containing layer to the oxynitride layer.
12. The method of manufacturing a semiconductor device according to claim 1 , wherein a refractive index of the oxynitride film having the specific film thickness is controlled to be 1.45 to 2.0 by controlling the partial pressure of the oxygen-containing gas in the processing vessel, in changing the specific element-containing layer to the oxynitride layer.
13. The method of manufacturing a semiconductor device according to claim 1 , wherein at least the nitrogen-containing gas and the oxygen-containing gas are supplied through the same nozzle.
14. The method of manufacturing a semiconductor device according to claim 1 , wherein the nitrogen-containing gas, the oxygen-containing gas and the inert gas are supplied through the same nozzle.
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November 1, 2011
September 15, 2015
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