Semiconductor light emitting device

1. A semiconductor light emitting device comprising: a semiconductor layer including a light emitting layer, a first surface, a second surface opposite to the first surface, and side surfaces connected between the first surface and the second surface; a phosphor layer provided in contact with the first surface; a first electrode provided in an emitting region on the second surface; a second electrode provided in a non-emitting region on the second surface; a first interconnection section provided on the first electrode and electrically connected to the first electrode; a second interconnection section provided on the second electrode and electrically connected to the second electrode; a first insulating film provided to cover substantially all of the side surfaces of the semiconductor layer between the first surface and the second surface; a second insulating film and a third insulating film with a plurality of vias provided on the second surface, wherein end portions of the first electrode are directly between the second insulating film and the third insulating film; and a resin layer provided between the first interconnection section and the second interconnection section, and provided on the first insulating film in contact with the phosphor layer such that the first insulating film is between the side surfaces of the semiconductor layer and the resin layer, the resin layer including varistor particles and conductive particles in its entirety.

2. The semiconductor light emitting device according to claim 1 , wherein the conductive particles are gold particles.

3. The semiconductor light emitting device according to claim 1 , wherein the second insulating film covers an end surface of the light emitting layer and has a higher breakdown voltage than the resin layer.

4. The semiconductor light emitting device according to claim 1 , wherein the third insulating film is provided on the first electrode, and wherein part of the second interconnection section extends on the third insulating film.

5. The semiconductor light emitting device according to claim 4 , wherein the first interconnection section includes: a first interconnection layer provided on the first electrode; and a first metal pillar provided on the first interconnection layer and being thicker than the first interconnection layer, and wherein the second interconnection section includes: a second interconnection layer provided on the second electrode and on the third insulating film; and a second metal pillar provided on the second interconnection layer and being thicker than the second interconnection layer.

6. The semiconductor light emitting device according to claim 1 , wherein the varistor particles are particles of BaTiO 3 , SrTiO 3 , ZnO, BiO, CoO, MnO, SbO, CrO, NiO, SiN, or SiO.

7. The semiconductor light emitting device according to claim 1 , wherein the semiconductor layer is formed on a substrate, which is then removed.

8. The semiconductor light emitting device according to claim 7 , wherein an unevenness is formed on the first surface of the semiconductor layer from which the substrate has been removed.

9. The semiconductor light emitting device according to claim 7 , wherein the phosphor layer is provided on the first surface of the semiconductor layer from which the substrate has been removed.

10. The semiconductor light emitting device according to claim 1 , wherein the conductive particles have a lower electrical resistance than the varistor particles.

11. The semiconductor light emitting device according to claim 1 , wherein when a voltage larger than a rated voltage of the semiconductor light emitting device is applied to the varistor particles, a current flows through the first interconnection section, the resin layer, and the second interconnection section without passing through the light emitting layer.