Patentable/Patents/US-9153463
US-9153463

Substrate support device

PublishedOctober 6, 2015
Assigneenot available in USPTO data we have
Inventorsnot available in USPTO data we have
Technical Abstract

A substrate support device formed of a metal and having a high withstand voltage and a high thermal resistance is provided. A substrate support device according to the present invention includes a plate section formed of a metal; a shaft section connected to the plate section and formed of a metal; a heating element provided in the plate section; and an insulating film formed on a first surface of the plate section, the first surface opposite to the shaft section, by ceramic thermal spraying. The substrate support device may further include an insulating film formed on a second surface of the plate section which intersects the first surface of the plate section approximately perpendicularly.

Patent Claims
16 claims

Legal claims defining the scope of protection, as filed with the USPTO.

1

1. A substrate support device, comprising: a plate section formed of a metal; a shaft section connected to the plate section and formed of a metal; a heating element provided in the plate section; a first insulating film formed on a first surface of the plate section, the first surface opposite to the shaft section, by ceramic thermal spraying; and a second insulating film formed on a second surface of the plate section which intersects the first surface of the plate section approximately perpendicularly, by ceramic thermal spraying, wherein: the first surface of the plate section has a recessed portion; an edge between the recessed portion and a peripheral non-recessed portion of the first surface has a curvature rounded off so as to be curved outward, and an edge between the first surface and the second surface has a curvature rounded off so as to be curved outward; the first and second insulating films are insulating films as thin as possible in a range to achieve a desired withstand voltage; the second surface of the plate section has a portion having a curvature, and having a value nearly equal to a thickness of the plate section, which is curved outward toward a third surface of the plate section, the third surface being connected to the shaft section; the second insulating film is gradually thinner from the second surface of the plate section toward a connection position with the shaft section on the third surface; and the first insulating film connects the second insulating film on the edge between the first surface and the second surface, a connection part of the first insulating film and the second insulating film has a curvature rounded off so as to be curved outward.

2

2. The substrate support device according to claim 1 , wherein the first and second insulating films are formed of a material being ceramic-thermal-sprayed, the material of the first and second insulating films is selected from an oxide of at least one of alkaline earth metals, rare-earth metals, Al, Ta and Si, a difference in the coefficient of thermal expansion between the plate section and the first and second insulating films is small.

3

3. The substrate support device according to claim 2 , wherein the material of the first and second insulating films is selected from aluminum oxide (Al 2 O 3 ), magnesium oxide (MgO) and yttrium oxide (Y 2 O 3 ).

4

4. The substrate support device according to claim 3 , wherein a material of the plate section is aluminum (Al) and the material of the first and second insulating films is aluminum oxide.

5

5. The substrate support device according to claim 4 , wherein the thickness of the first and second insulating films is 100 μm or larger and 200 μm or less.

6

6. The substrate support device according to claim 2 , wherein the first and second insulating films formed by ceramic thermal spraying have a stoichiometric composition or a composition close thereto.

7

7. The substrate support device according to claim 1 , further comprising a buffer layer formed between the plate section and the first and second insulating films.

8

8. The substrate support device according to claim 7 , wherein the buffer layer is made of magnesium oxide (MgO).

9

9. A substrate support device, comprising: a plate section formed of a metal; a shaft section connected to the plate section and formed of a metal; a heating element provided in the plate section; a first insulating film formed on a first surface of the plate section, the first surface opposite to the shaft section, by ceramic thermal spraying; a second insulating film formed on a second surface of the plate section which intersects the first surface of the plate section approximately perpendicularly, by ceramic thermal spraying; and a third insulating film formed on a third surface of the plate section by ceramic thermal spraying, the third surface being connected to the shaft section, wherein: the first surface of the plate section has a recessed portion; an edge between the recessed portion and a peripheral non-recessed portion of the first surface has a curvature rounded off so as to be curved outward, an edge between the first surface and the second surface has a curvature rounded off so as to be curved outward and an edge between the second surface and the third surface has a curvature rounded off so as to be curved outward; the first, second and third insulating films are insulating films as thin as possible in a range to achieve a desired withstand voltage, the first insulating film connects the second insulating film on the edge between the first surface and the second surface a connection part of the first insulating film and the second insulating film has a curvature rounded off so as to be curved outward; and the second insulating film connects the third insulating film on the edge between the second surface and the third surface, a connection part of the second insulating film and the third insulating film has a curvature rounded off so as to be curved outward.

10

10. The substrate support device according to claim 9 , wherein the first and second insulating films are formed of a material being ceramic-thermal-sprayed, the material of the first and second insulating films is selected from an oxide of at least one of alkaline earth metals, rare-earth metals, Al, Ta and Si, a difference in the coefficient of thermal expansion between the plate section and the first and second insulating films is small.

11

11. The substrate support device according to claim 10 , wherein the material of the first and second insulating films is selected from aluminum oxide (Al 2 O 3 ), magnesium oxide (MgO) and yttrium oxide (Y 2 O 3 ).

12

12. The substrate support device according to claim 11 , wherein a material of the plate section is aluminum (Al) and the material of the first and second insulating films is aluminum oxide.

13

13. The substrate support device according to claim 12 , wherein the thickness of the first and second insulating films is 100 μm or larger and 200 μm or less.

14

14. The substrate support device according to claim 10 , wherein the first and second insulating films formed by ceramic thermal spraying have a stoichiometric composition or a composition close thereto.

15

15. The substrate support device according to claim 9 , further comprising a buffer layer formed between the plate section and the first and second insulating films.

16

16. The substrate support device according to claim 15 , wherein the buffer layer is made of magnesium oxide (MgO).

Classification Codes (CPC)

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Patent Metadata

Filing Date

November 25, 2011

Publication Date

October 6, 2015

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