A two-stage protection device for an electronic component protects against transient disturbances. The electronic component may be a semiconductor component, and may include one or multiple transistors and/or an integrated circuit. The protection device is connected to at least a first contact and a second contact of the electronic component, and is disposed essentially in parallel to the component that is to be protected, between the first contact and the second contact. The protection device includes a first stage with at least one diode and a second stage separated from the first stage by a resistor. The second stage includes at least one diode arrangement having two back-to-back disposed diodes which are disposed cathode-to-cathode.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A protection device for protection against transient disturbances, the protection device configured for electrical connection to at least a first contact and a second contact of an electronic component, the protection device comprising: a first stage with at least one diode, the first stage being connected to at least one terminal; and a second stage separated from the first stage by a resistor and directly connected to the first contact and to the second contact, the second stage being adapted for smaller current than the first stage and comprising at least one diode arrangement including two back-to-back polysilicon diodes, the two back-to-back polysilicon diodes being disposed cathode-to-cathode in a p-n-p configuration comprising a floating n-type area between a first p-type area and a second p-type area.
2. The protection device of claim 1 , wherein one anode of the two back-to-back polysilicon diodes is connected to the first contact of the electronic component by a connection having essentially zero resistance.
3. The protection device of claim 1 , wherein the electronic component is a silicon semiconductor component having a silicon substrate and the two back-to-back polysilicon diodes are disposed on the silicon substrate.
4. The protection device of claim 1 , wherein the at least one diode arrangement further comprises one or more additional diodes disposed in series with the two back-to-back polysilicon diodes.
5. The protection device of claim 1 , wherein the at least one diode arrangement further comprises a plurality of additional diodes directed in a common direction with respect to each other and disposed in series with the two back-to-back polysilicon diodes.
6. The protection device of claim 1 , wherein the second stage further comprises one or more additional diodes disposed in parallel to the two back-to-back polysilicon diodes between the first contact and the second contact of the electronic component.
7. The protection device of claim 6 , wherein each additional diode disposed in parallel to the two back-to-back polysilicon diodes is oriented in the forward direction towards the first contact.
8. The protection device of claim 6 , wherein each additional diode disposed in parallel to the two back-to-back polysilicon diodes is a polysilicon diode.
9. The protection device of claim 1 , wherein the first stage comprises at least two back-to-back polysilicon diodes disposed in a p-n-p configuration comprising a floating n-type area between a first p-type area and a second p-type area.
10. A protection device for protection against transient disturbances, the protection device configured for connection in parallel to at least a first contact and a second contact of a semiconductor electronic component, the protection device comprising: a diode arrangement including at least two back-to-back polysilicon diodes, wherein the at least two back-to-back polysilicon diodes are implemented on a silicon substrate of the semiconductor electronic component in a p-n-p configuration, wherein the at least two back-to-back diodes comprise a floating n-type area between a first p-type area and a second p-type area.
11. An ESD protection device, comprising: a first stage comprising a first electrical connection point, a second electrical connection point and a first diode between the first and second electrical connection points; a second stage comprising a first electrical connection point, a second electrical connection point and a diode arrangement including two back-to-back polysilicon diodes between the first and second electrical connection points of the second stage, the two back-to-back polysilicon diodes being disposed cathode-to-cathode in a p-n-p configuration; and a resistor connecting the first electrical connection point of the first stage to the first electrical connection point of the second stage, wherein the second electrical connection point of the second stage is directly connected to the second electrical connection point of the first stage.
12. The ESD protection device of claim 11 , wherein the diode arrangement further comprises one or more additional diodes disposed in series with the two back-to-back polysilicon diodes.
13. The ESD protection device of claim 11 , wherein the diode arrangement further comprises a plurality of additional diodes directed in a common direction with respect to each other and disposed in series with the two back-to-back polysilicon diodes.
14. The ESD protection device of claim 11 , wherein the second stage further comprises one or more additional diodes disposed in parallel to the two back-to-back polysilicon diodes between the first and second electrical connection points of the second stage.
15. The ESD protection device of claim 11 , wherein the first stage further comprises an additional diode disposed cathode-to-cathode in a p-n-p configuration with the first diode of the first stage.
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July 25, 2013
October 13, 2015
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