The invention relates to a method for applying a polychromatizing layer which contains at least one luminescent means on a semiconductor substrate, which layer is suitable for producing a monochromatic light. The polychromatizing layer is applied with a printing process, especially with a micro-contact printing process. Preferably the polychromatizing layer is applied structured.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for applying a layer onto a semiconductor substrate, said semiconductor substrate containing a sublayer that emits light, said method comprising the steps of: applying a layer that is polychromatizing and that contains at least one luminescent material to a surface of a substrate; orienting the substrate and the semiconductor substrate such that the surface of the substrate aligns with and faces a surface of the semiconductor substrate; moving the surface of the substrate and the surface of the semiconductor substrate into contact with each other wherein the layer is printed onto the surface of the semiconductor substrate.
2. The method as claimed in claim 1 , wherein the layer is printed onto the surface of the semiconductor substrate by a micro-contact printing process.
3. The method as claimed in claim 1 or 2 , wherein the substrate is a printing stamp having a printing cavity.
4. The method as claimed in claim 1 , wherein the polychromatizing layer is applied to the semiconductor substrate as a patterned structure.
5. The method as claimed in claim 4 , wherein the patterned structure includes individual layer elements which comprise rectangles, squares, circles, triangles, filled polygons or similar layer elements.
6. The method as claimed in claim 5 , wherein the layer elements have a structure width (B) which is less than 1 mm.
7. The method as claimed in one of claim 1 or 2 , wherein the polychromatizing layer is printed in a blanket manner on the semiconductor substrate.
8. The method as claimed in claim 1 , wherein the polychromatizing layer has a layer thickness (H) which is less than 100 μm.
9. The method as claimed in claim 1 , wherein the semiconductor substrate is a wafer is printed.
10. The method as claimed in claim 1 , wherein in one printing step a printing stamp is used whose length (L) corresponds at least largely to the diameter of the semiconductor substrate so that the polychromatizing layer is applied in a single printing step.
11. The method as claimed in claim 1 , wherein in one printing step a printing stamp is used whose length (L) is less than the diameter of the semiconductor substrate so that the polychromatizing layer is applied by a plurality of printing steps.
12. The method as claimed in claim 1 , wherein at least one luminescent material is selected from the group consisting of: white phosphorus; phosphorescing pure components, therefore elements or molecules; phosphorescing liquids; crystals which can produce phosphorescence by disruption of the lattice structures, mainly sulfides of alkaline earth metals and of zinc which have been mixed with heavy metal salts; and luminescing materials which can be dissolved in a matrix which is transparent to the radiation which has been produced by luminescence.
13. The method as claimed in claim 1 , wherein the polychromatizing layer is a liquid and/or printable mass.
14. The method as claimed in claim 13 , wherein the liquid and/or printable mass includes a solution, a dispersion or an enamel.
15. Semiconductor substrate containing a semiconductor layer for producing monochromatic light, the semiconductor substrate including a polychromatizing layer, wherein the polychromatizing layer is applied as a patterned structure, with a method according to claim 1 .
16. Optoelectronic component with a semiconductor substrate according to claim 15 .
17. The method as claimed in claim 5 , wherein the layer elements have a structure width (B) less than 100 μm.
18. The method as claimed in claim 5 , wherein the layer elements have a structure width (B) less than 10 μm.
19. The method as claimed in claim 5 , wherein the layer elements have a structure width (B) less than 1 μm.
20. A method for applying a layer onto a semiconductor substrate, said method comprising the steps of: providing said semiconductor substrate containing a sublayer that emits light; applying a layer that is polychromatizing and that contains at least one luminescent material to a surface of a substrate; orienting the substrate and a semiconductor substrate such that the surface of the substrate aligns with and faces a surface of the semiconductor substrate; and moving the surface of the substrate and the surface of the semiconductor substrate into contact with each other wherein at least a portion of the layer on the surface of the substrate is printed onto the surface of the semiconductor substrate and wherein the light emitted by said sublayer is at least partially converted by the layer printed on the surface of the semiconductor substrate to produce light having at least two wavelengths.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 21, 2011
December 1, 2015
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