A method of fabricating an organic electronic device is provided. The organic electronic device has a structure including an upper conductive layer and an underlying layer immediately beneath said upper conducting layer and having at least one solution process able semiconducting layer. The upper conducting layer preferably has a thickness of between 10 nm and 200 nm. The method includes patterning said upper conductive layer of said structure by: laser ablating said upper conductive layer using a pulsed laser to remove regions of upper conductive layer from said underlying layer for said patterning; and wherein said laser ablating uses a single pulse of said laser to substantially completely remove a said region of said upper conductive layer to expose said underlying layer beneath.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of fabricating an organic electronic device, said organic electronic device having a structure including an inorganic metal upper conductive layer and an underlying layer immediately beneath said upper conductive layer, the method comprising patterning said upper conductive layer of said structure by: laser ablating said inorganic metal upper conductive layer using a pulsed laser to remove a region of said inorganic metal upper conductive layer from said underlying layer for said patterning; wherein said laser ablating uses a single pulse of said laser to substantially completely remove a said region of said inorganic metal upper conductive layer to expose said underlying layer beneath; wherein the fluence of said laser pulse is greater than an ablation threshold of said underlying layer and wherein said inorganic metal upper conductive layer has an optical density greater than that of said underlying layer at a wavelength of said laser pulse; and wherein said underlying layer is substantially undamaged by said ablating wherein said underlying layer comprises a layer formed of an organic material; and wherein said inorganic metal upper conductive layer has an optical density greater than 1.
2. A method as claimed in claim 1 wherein said single pulse of said laser has a fluence of less than 200 mJ/cm 2 .
3. A method as claimed in claim 1 wherein said single pulse of said laser has a duration of less than 100 ns.
4. A method as claimed in claim 3 wherein said single pulse of said laser has a duration of less than 10 ns.
5. A method as claimed in claim 1 wherein said inorganic metal upper conductive layer has a thickness of less than 500 nm.
6. A method as claimed in claim 1 wherein said inorganic metal upper conductive layer has a thickness of less than 50 nm and wherein said single laser pulse has a fluence of less than 100 mJ/cm 2 .
7. A method as claimed in claim 1 wherein said inorganic metal upper conductive layer has a resistivity of less than 100 μΩcm.
8. A method as claimed in claim 1 wherein said structure includes one or more lower layers beneath said underlying layer, and wherein said fluence of said laser pulse is greater than an ablation threshold of one or more of said lower layers.
9. A method as claimed in claim 1 wherein said underlying layer has an optical density of less than 1 at a wavelength of said laser pulse.
10. A method as claimed in claim 1 wherein said underlying layer comprises a layer of organic dielectric material.
11. A method as claimed in claim 10 , wherein said electronic device comprises a thin film transistor.
12. A method of fabricating a thin film field effect transistor (FET), using the method of claim 11 , wherein said FET has a ratio of off resistance to on resistance of greater than 10 4 .
13. A method as claimed in claim 12 wherein said FET has a ratio of off resistance to on resistance of greater than 10 5 .
14. A method as claimed in claim 11 , wherein said thin film transistor comprises a top gate field effect transistor.
15. A method as claimed in claim 1 wherein said underlying layer comprises a dielectric stack.
16. A method as claimed in claim 15 wherein said dielectric stack comprises a plurality of layers of dielectric material, and wherein one of said layers of dielectric material has a greater ablation threshold or absorption than one or more other dielectric material layers of said dielectric stack further from said inorganic metal upper conductive layer.
17. A method as claimed in claim 15 wherein said dielectric stack includes at least one layer of parylene.
18. A method as claimed in claim 1 wherein said underlying layer comprises a semiconducting layer, whereby said semiconducting layer is immediately beneath said upper conductive layer.
19. A method as claimed in claim 18 wherein said semiconducting layer has a thickness of at least 30 nm.
20. A method of fabricating a field effect transistor using the method of claim 18 , wherein said electronic device comprises a bottom gate field effect transistor.
21. A method as claimed in claim 1 wherein the organic electronic device comprises an organic semiconducting layer beneath the upper conductive layer.
22. A method as claimed in claim 1 wherein said inorganic metal upper conductive layer comprises gold or copper.
23. A method as claimed in claim 1 wherein said laser has a wavelength of less than 400 nm and wherein said single laser pulse has a fluence of at least 10 mJ/cm 2 .
24. A method as claimed in claim 1 wherein said laser comprises an Excimer laser.
25. A method of fabricating an organic electronic device on a flexible substrate using the method of claim 1 , wherein said structure is flexible and supported on a flexible substrate.
26. An electronic device fabricated using the method of claim 1 .
27. A method of fabricating a thin film transistor (TFT) active matrix display, sensing device, or logic circuit employing the method of claim 1 .
28. A method of fabricating an organic electronic device on a flexible substrate, said organic electronic device having a structure including an inorganic metal upper conductive layer and an underlying layer immediately beneath said upper conducting layer, the method comprising patterning said inorganic metal upper conductive layer of said structure by: laser ablating said inorganic metal upper conductive layer using a pulsed laser to remove a region of upper conductive layer from said underlying layer for said patterning, wherein said upper conductive layer has a first ablation threshold and a transmittance at a wavelength of said pulsed light; wherein said laser ablating uses a single pulse of said laser to substantially completely remove said region of said inorganic metal upper conductive layer to expose said underlying layer beneath; wherein said underlying layer has a second ablation threshold and wherein the second ablation threshold is greater than a product of the first ablation threshold and the transmittance and wherein the fluence of said laser pulse is greater than said second ablation threshold; and wherein said underlying layer is substantially undamaged by said ablating wherein said underlying layer comprises a layer formed of an organic material; and wherein said inorganic metal upper conductive layer has an optical density greater than 1.
29. A method as claimed in claim 28 wherein said inorganic metal upper conducting layer has a thickness of between 10 nm and 500 nm.
30. A method as claimed in claim 28 wherein said single laser pulse has a fluence of less than 600 mJ/cm 2 .
31. A method as claimed in claim 28 , wherein said underlying layer comprises a semiconducting layer whereby said semiconducting layer is immediately beneath said upper conductive layer.
32. A method of fabricating a thin film transistor (TFT) active matrix display, sensing device, or logic circuit employing the method of claim 28 .
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
May 30, 2006
December 8, 2015
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