Hybridly integrated component and method for the production thereof

1. A hybridly integrated component, comprising: an ASIC element having a processed front side; a first MEMS element having a first substrate and a first micromechanical structure extending over an entire thickness of the first substrate, wherein at least one structural element of the first micromechanical structure is deflectable, and wherein the first MEMS element is mounted on the processed front side of the ASIC element such that a first gap exists between the first micromechanical structure and the ASIC element; a first cap wafer mounted over the first micromechanical structure of the first MEMS element; a second MEMS element mounted on a rear side of the ASIC element, the second MEMS element having a second substrate and a second micromechanical structure extending over an entire thickness of the second substrate, wherein the second MEMS element includes at least one deflectable structural element, and wherein a second gap exists between the second micromechanical structure and the ASIC element; and a second cap wafer mounted over the second micromechanical structure of the second MEMS element; wherein the ASIC element contains at least one ASIC through-contact which produces an electrical connection between the processed front side of the ASIC element and the second MEMS element on the rear side of the ASIC element.

2. The component as recited in claim 1 , wherein at least one of the first cap wafer and the second cap wafer contains at least one cap through-contact for external contacting of the component.

3. The component as recited in claim 1 , wherein: at least one of the first MEMS element and the second MEMS element includes a micromechanical sensor structure having at least one seismic mass extending over an entire thickness of the at least one of the first MEMS element and the second MEMS element; and at least a portion of a signal processing and evaluation circuit for sensor signals are integrated on the ASIC element.

4. A method for producing hybridly integrated components, comprising: processing an ASIC substrate to provide a processed front side of the ASIC substrate; mounting a first MEMS substrate on the processed front side of the ASIC substrate; producing a first micromechanical structure in the mounted first MEMS substrate, the first micromechanical structure extending over an entire thickness of the first MEMS substrate; mounting a first cap wafer over the first micromechanical structure of the first MEMS substrate; mounting a second MEMS substrate on a rear side of the ASIC substrate; producing a second micromechanical structure in the mounted second MEMS substrate, the second micromechanical structure extending over an entire thickness of the second MEMS substrate; and mounting a second cap wafer over the second micromechanical structure of the second MEMS substrate; wherein in the processing of the ASIC substrate, at least one ASIC through-contact is created in the ASIC substrate, the ASIC through-contact producing an electrical connection between the processed front side of the ASIC substrate and the second MEMS substrate on the rear side of the ASIC substrate.

5. The method as recited in claim 4 , wherein in the processing of the ASIC substrate, a layer construction having at least one circuit level is produced on the front side of the ASIC substrate.

6. The method as recited in claim 4 , wherein the processed ASIC substrate is thinned on the rear side before the mounting of the second MEMS substrate.

7. The method as recited in claim 4 , wherein at least one of: (i) a first standoff structure is produced on the front side of the processed ASIC substrate, and the first MEMS substrate is mounted on the first standoff structure; and (ii) a second standoff structure is produced on the rear side of the processed ASIC substrate, and the second MEMS substrate is mounted on the second standoff structure.

8. The method as recited in claim 4 , wherein at least one of (i) an electrical connection between the first MEMS substrate and the processed ASIC substrate is produced in a first bonding method, and (ii) the electrical connection between the second MEMS substrate and the processed ASIC substrate is produced in a second bonding method.

9. The method as recited in claim 4 , wherein after mounting on the processed ASIC substrate, at least one of the first MEMS substrate and the second MEMS substrate is thinned down to a specified structural height of corresponding at least one of the first micromechanical structure and the second micromechanical structure to be produced.

10. The method as recited in claim 4 , wherein a structuring of at least one of the first MEMS substrate and the second MEMS substrate takes place in a trench process.

11. The method as recited in claim 4 , wherein at least one of (i) in the first MEMS substrate at least one first MEMS through-contact is produced as an electrical connection between the first MEMS substrate and the ASIC substrate, and (ii) in the second MEMS substrate at least one second MEMS through-contact is produced as an electrical connection between the second MEMS substrate and the ASIC substrate.

12. The method as recited in claim 4 , wherein at least one of the first cap wafer and the second cap wafer is preprocessed, prior to the mounting, to produce at least one cap through-contact for external electrical contacting.