A pixel device having an improved energy resolution includes at least one photodiode and at least one voltage supply unit for applying a voltage to the photodiode. The pixel device includes a voltage storage unit and a voltage adjusting unit. In a precharge mode, the voltage storage unit stores a first anode voltage. In a sensing mode, the voltage adjusting unit adjusts a second anode voltage of the anode of the photodiode to be the same as the first anode voltage stored in the voltage storage unit.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A pixel device comprising: at least one photodiode; and at least one voltage supply unit configured to apply a voltage to the photodiode, and comprising a voltage storage unit and a voltage adjusting unit, wherein, in a precharge mode, the voltage storage unit is configured to store a first anode voltage, wherein, in a sensing mode, the voltage adjusting unit is configured to adjust a second anode voltage of an anode of the photodiode to be the same as the first anode voltage stored in the voltage storage unit, and wherein the voltage adjusting unit comprises, a closed loop circuit, a first comparator including, a first terminal connected to the voltage storage unit and for receiving the first anode voltage, a second terminal connected to the anode of the photodiode and for receiving the second anode voltage, and a first output terminal for comparing signals of the first and second terminals and outputting a comparison result, and a transistor including a gate connected to the first output terminal of the first comparator, a source connected to a ground, and a drain connected to the anode of the photodiode.
2. The pixel device of claim 1 , wherein the voltage storage unit comprises a capacitor.
3. The pixel device of claim 1 , wherein, in the precharge mode, the voltage storage unit is connected to the anode of the photodiode.
4. The pixel device of claim 1 , wherein the first anode voltage is a breakdown voltage of the photodiode.
5. The pixel device of claim 1 , further comprising: a quenching unit connected to a cathode of the at least one photodiode, the quenching unit configured to provide a discharge path to allow the at least one photodiode to transition to a quiescent state; and a readout unit connected to the cathode of the at least one photodiode, the readout unit configured to count transitions of the at least one photodiode.
6. The pixel device of claim 1 , wherein the voltage supply unit further comprises: a first switch connected between the anode of the photodiode and the voltage storage unit, and wherein the first switch is turned on in the precharge mode and is turned off in the sensing mode.
7. The pixel device of claim 6 , wherein the voltage supply unit further comprises: a second switch connected between the voltage storage unit and the voltage adjusting unit, and wherein the second switch is turned off in the precharge mode and is turned on in the sensing mode.
8. The pixel device of claim 1 , wherein the voltage adjusting unit further comprises: a third switch connected between the gate of the transistor and the first output terminal of the first comparator, wherein the third switch is turned off in the precharge mode and is turned on in the sensing mode.
9. The pixel device of claim 8 , wherein the voltage supply unit further comprises: a second comparator including, a third terminal connected to a cathode of the at least one photodiode; a fourth terminal for receiving a reference voltage; and a second output terminal for comparing signals of the third and fourth terminals and outputting a comparison result; and a fourth switch connected between the gate of the transistor and the second output terminal of the second comparator, wherein the fourth switch is turned on in the precharge mode and is turned off in the sensing mode.
10. The pixel device of claim 1 , wherein the pixel device includes a plurality of microcells, the at least one photodiode comprises a plurality of photodiodes, and the plurality of photodiodes are individually comprised in the plurality of microcells.
11. The pixel device of claim 10 , wherein the at least one voltage supply unit comprises a plurality of voltage supply units, and wherein the plurality of voltage supply units are individually comprised in the plurality of microcells.
12. The pixel device of claim 10 , wherein the at least one voltage supply unit is a single voltage supply unit, and wherein the single voltage supply unit is connected to the plurality of microcells and is configured to apply a voltage to the plurality of photodiodes.
13. A radiation detecting module comprising: a scintillator for receiving radiation and generating photons; and a plurality of pixel devices configured to receive the photons generated by the scintillator, wherein each of the plurality of pixel devices includes, at least one photodiode, and at least one voltage supply unit configured to apply a voltage to the photodiode, and comprising a voltage storage unit and a voltage adjusting unit, wherein, in a precharge mode, the voltage storage unit is configured to store a first anode voltage, wherein, in a sensing mode, the voltage adjusting unit is configured to adjust a second anode voltage of an anode of the photodiode to be the same as the first anode voltage stored in the voltage storage unit, and wherein the voltage adjusting unit comprises, a closed loop circuit, a first comparator including, a first terminal connected to the voltage storage unit and for receiving a first anode voltage, a second terminal connected to the anode of the photodiode and for receiving the second anode voltage, and a first output terminal for comparing signals of the first and second terminals and out-putting a comparison result, and a transistor including, a gate connected to the first output terminal of the first comparator, a source connected to a ground, and a drain connected to the anode of the photodiode.
14. The radiation detecting module of claim 13 , further comprising; a printed circuit board (PCB) for mounting a semiconductor chip, the PCB including at least one power pin for providing a supply voltage to the plurality of pixel devices, wherein the plurality of pixel devices are integrated on the semiconductor chip in the form of an array.
15. The radiation detecting module of claim 14 , wherein, the at least one power pin is a single power pin, and the single power pin is electrically connected to and provides a supply voltage to the plurality of pixel devices.
16. The radiation detecting module of claim 13 , wherein, in the precharge mode, the voltage storage unit is connected to the anode of the photodiode.
17. A radiation detecting apparatus comprising: an image region for accommodating a target object to capture an image of the target object; a plurality of radiation detecting modules surrounding the image region, configured to receive radiation from the target object, and configured to transform the radiation into electrical signals; and an image processing unit configured to generate the image of the target object based on the electrical signals, wherein each of the radiation detecting modules includes, a scintillator configured to receive a radiation and generating photons; and a plurality of pixel devices configured to receive the photons generated by the scintillator, each of the plurality of pixel devices includes, at least one photodiode, and at least one voltage supply unit configured to apply a voltage to the photodiode, and including a voltage storage unit and a voltage adjusting unit, wherein, in a precharge mode, the voltage storage unit is configured to store a first anode voltage, and wherein, in a sensing mode, the voltage adjusting unit is configured to adjust a second anode voltage of an anode of the photodiode to be the same as the first anode voltage stored in the voltage storage unit, and wherein the voltage adjusting unit comprises, a closed loop circuit, a first comparator including, a first terminal connected to the voltage storage unit and for receiving a first anode voltage, a second terminal connected to the anode of the photodiode and for receiving the second anode voltage, and a first output terminal for comparing signals of the first and second terminals and outputting a comparison result, and a transistor including, a gate connected to the first output terminal of the first comparator, a source connected to a ground, and a drain connected to the anode of the photodiode.
18. The radiation detection apparatus of claim 17 , wherein, in the precharge mode, the voltage storage unit is connected to the anode of the photodiode.
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March 29, 2012
December 29, 2015
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