A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located on at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a casing having a cavity and a mounting surface, the chip mounted on the mounting surface, a transparent plate mounted on the wavelength converting layer within a top surface of the chip and a reflective layer located in the cavity so as to surround the transparent plate, the wavelength converting layer and the chip. The semiconductor light-emitting device can be configured to improve light-colored variability and light-emitting efficiency of the chip by using the reflective layer as a reflector, and therefore can emit a wavelength-converted light having a substantially uniform color tone and a high light-emitting efficiency from a smaller light-emitting surface than the top surface of the chip.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor light-emitting device including an optical axis comprising: a base board having a mounting surface and a conductor pattern formed on the mounting surface, and the mounting surface including an outer circumference; a frame formed in a tubular shape and being located on the outer circumference of the mounting surface of the base board; at least one semiconductor light-emitting chip having a bottom surface, a side surface and a top surface including a center, and including chip electrodes adjacent the bottom surface, each of the chip electrodes electrically connected to a respective portion of the conductor pattern of the base board via solder bumps; a transparent plate having a top surface, a side surface and a bottom surface, and being located over the top surface of the at least one semiconductor light-emitting chip, each of the top surface and the bottom surface of the transparent plate being smaller than the top surface of the semiconductor light-emitting chip, and the top surface of the transparent plate being configured to become a light-emitting surface of the light-emitting device; a wavelength converting layer having a side surface and including at least one phosphor, the wavelength converting layer disposed between the side surface of the transparent plate and the side surface of the at least one semiconductor light-emitting chip so that the side surface of the wavelength converting layer includes a convex surface, which extends toward the frame at a location between the side surface of the at least one semiconductor light-emitting chip and the side surface of the transparent plate, and a part of the convex surface being laterally covering the side surface of the at least one semiconductor light-emitting chip and another part of the convex surface laterally covering the side surface of the transparent plate; and a reflective layer having a side surface, the side surface of the reflective layer including a concave surface in contact with the convex surface of the side surface of the wavelength converting layer, the reflective layer disposed between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent plate and between the bottom surface of the at least one semiconductor light-emitting chip and the mounting surface of the base board while surrounding the solder bumps, wherein the side surface of the reflective layer contacts with the convex surface of the wavelength converting layer and a part of the side surface of the transparent plate that is located in an inward direction from an apex of the convex surface of the wavelength converting layer, and wherein the optical axis of the semiconductor light-emitting device extends substantially normal with respect to the top surface of the at least one semiconductor light-emitting chip from substantially the center of the top surface of the at least one semiconductor light-emitting chip.
2. The semiconductor light-emitting device according to claim 1 , wherein the frame is integrated into the base board as one casing.
3. The semiconductor light-emitting device according to claim 1 , wherein the wavelength converting layer includes a spacer, which maintains a substantially uniform thickness of the wavelength converting layer disposed between the bottom surface of the transparent plate and the top surface of the semiconductor light-emitting chip.
4. The semiconductor light-emitting device according to claim 2 , wherein the wavelength converting layer includes a spacer, which maintains a substantially uniform thickness of the wavelength converting layer disposed between the bottom surface of the transparent plate and the top surface of the semiconductor light-emitting chip.
5. The semiconductor light-emitting device according to claim 1 , wherein the at least one semiconductor light-emitting chip includes a blue light-emitting chip and the at least one phosphor of the wavelength converting layer is selected from the group consisting of a yellow phosphor, and two phosphors including a red phosphor layer and a green phosphor layer.
6. The semiconductor light-emitting device according to claim 2 , wherein the at least one semiconductor light-emitting chip includes a blue light-emitting chip and the at least one phosphor of the wavelength converting layer is selected from the group consisting of a yellow phosphor, and two phosphors including a red phosphor layer and a green phosphor layer.
7. The semiconductor light-emitting device according to claim 1 , further comprising: a projector lens having an optical axis and at least one focus located on the optical axis being located in a light-emitting direction of the semiconductor light-emitting device so that the optical axis of the projector lens substantially corresponds to the optical axis of the semiconductor light-emitting device and the focus of the projector lens is located substantially at the semiconductor light-emitting device.
8. The semiconductor light-emitting device according to claim 2 , further comprising: a projector lens having an optical axis and at least one focus located on the optical axis being located in a light-emitting direction of the semiconductor light-emitting device so that the optical axis of the projector lens substantially corresponds to the optical axis of the semiconductor light-emitting device and the focus of the projector lens is located substantially at the semiconductor light-emitting device.
9. The semiconductor light-emitting device according to claim 3 , further comprising: a projector lens having an optical axis and at least one focus located on the optical axis being located in a light-emitting direction of the semiconductor light-emitting device so that the optical axis of the projector lens substantially corresponds to the optical axis of the semiconductor light-emitting device and the focus of the projector lens is located substantially at the semiconductor light-emitting device.
10. The semiconductor light-emitting device according to claim 4 , further comprising: a projector lens having an optical axis and at least one focus located on the optical axis being located in a light-emitting direction of the semiconductor light-emitting device so that the optical axis of the projector lens substantially corresponds to the optical axis of the semiconductor light-emitting device and the focus of the projector lens is located substantially at the semiconductor light-emitting device.
11. A semiconductor light-emitting device comprising: a base board having a mounting surface and a conductor pattern formed on the mounting surface, and the mounting surface including an outer circumference; a frame formed in a tubular shape and being located on the outer circumference of the mounting surface of the base board; at least one semiconductor light-emitting chip having a top surface, a side surface and a bottom surface, and including chip electrodes adjacent the bottom surface, each of the chip electrodes electrically connected to a respective portion of the conductor pattern of the base board via solder bumps; a transparent plate having a top surface, a side surface and a bottom surface, and being located over the top surface of the at least one semiconductor light-emitting chip, each of the top surface and the bottom surface of the transparent plate being larger than the top surface of the semiconductor light-emitting chip, and the top surface of the transparent plate being configured to become a light-emitting surface of the light-emitting device; a wavelength converting layer having a side surface and including at least one phosphor, the wavelength converting layer disposed between the side surface of the transparent plate and the side surface of the at least one semiconductor light-emitting chip so that the side surface of the wavelength converting layer includes a convex surface, which extends toward the frame at a position between the side surface of the at least one semiconductor light-emitting chip and the side surface of the transparent plate, and a part of the convex surface being laterally covering the side surface of the at least one semiconductor light-emitting chip and another part of the convex surface laterally covering the side surface of the transparent plate; and a reflective layer having a side surface, the side surface of the reflective layer including a concave surface in contact with the convex surface of the side surface of the wavelength converting layer, the reflective layer disposed between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent plate and between the bottom surface of the at least one semiconductor light-emitting chip and the mounting surface of the base board while surrounding the solder bumps, wherein the side surface of the reflective layer contacts with the convex surface of the wavelength converting layer and a part of the side surface of the transparent plate that is located in an inward direction from an apex of the convex surface of the side surface of the wavelength converting layer.
12. The semiconductor light-emitting device according to claim 11 , wherein the frame is integrated into the base board as one casing.
13. The semiconductor light-emitting device according to claim 11 , wherein the wavelength converting layer includes a spacer, which maintains a substantially uniform thickness of the wavelength converting layer disposed between the bottom surface of the transparent plate and the top surface of the semiconductor light-emitting chip.
14. The semiconductor light-emitting device according to claim 12 , wherein the wavelength converting layer includes a spacer, which maintains a substantially uniform thickness of the wavelength converting layer disposed between the bottom surface of the transparent plate and the top surface of the semiconductor light-emitting chip.
15. A method for manufacturing the semiconductor light-emitting device according to claim 1 , comprising: providing a casing integrally comprising the base board and the frame; connecting each of the chip electrodes of the at least one semiconductor light-emitting chip to a respective portion of the conductor pattern of the base board of the casing via the solder bumps; disposing an uncured wavelength converting material between the bottom surface of the transparent plate and the top surface of the at least one semiconductor light-emitting chip so as to flow between the transparent plate and the at least one semiconductor light-emitting chip, and therefore the uncured wavelength converting material forming the side convex surface between the side surface of the transparent plate and the side surface of the semiconductor light-emitting chip; and disposing an uncured reflective material between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent plate and between the bottom surface of the at least one semiconductor light-emitting chip and the mounting surface of the base board.
16. A method for manufacturing the semiconductor light-emitting device according to claim 2 , comprising: providing the base board; connecting each of the chip electrodes of the at least one semiconductor light-emitting chip to a respective portion of the conductor pattern of the base board of the casing via the solder bumps; disposing an uncured wavelength converting material between the bottom surface of the transparent plate and the top surface of the at least one semiconductor light-emitting chip so as to flow between the transparent plate and the at least one semiconductor light-emitting chip, and therefore the uncured wavelength converting material forming the side convex surface between the side surface of the transparent plate and the side surface of the semiconductor light-emitting chip; and disposing an uncured reflective material between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent plate and between the bottom surface of the at least one semiconductor light-emitting chip and the mounting surface of the base board.
17. A method for manufacturing the semiconductor light-emitting device according to claim 11 , comprising: providing a casing integrally comprising the base board and the frame; connecting each of the chip electrodes of the at least one semiconductor light-emitting chip to a respective portion of the conductor pattern of the base board via the solder bumps; disposing an uncured wavelength converting material between the bottom surface of the transparent plate and the top surface of the at least one semiconductor light-emitting chip so as to flow between the transparent plate and the at least one semiconductor light-emitting chip, and therefore the uncured wavelength converting material forming the side convex surface between the side surface of the transparent plate and the side surface of the semiconductor light-emitting chip; and disposing an uncured reflective material between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent plate and between the bottom surface of the at least one semiconductor light-emitting chip and the mounting surface of the base board.
18. A method for manufacturing the semiconductor light-emitting device according to claim 12 , comprising: providing the base board; connecting each of the chip electrodes of the at least one semiconductor light-emitting chip to a respective portion of the conductor pattern of the base board via the solder bumps; disposing an uncured wavelength converting material between the bottom surface of the transparent plate and the top surface of the at least one semiconductor light-emitting chip so as to flow between the transparent plate and the at least one semiconductor light-emitting chip, and therefore the uncured wavelength converting material forming the side convex surface between the side surface of the transparent plate and the side surface of the semiconductor light-emitting chip; and disposing an uncured reflective material between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent plate and between the bottom surface of the at least one semiconductor light-emitting chip and the mounting surface of the base board.
19. The semiconductor light-emitting device according to claim 1 , wherein the semiconductor light-emitting chip is an ultraviolet light-emitting chip and the at least one phosphor of the wavelength converting layer includes at least one of a red phosphor, a green phosphor, and a blue phosphor.
20. The semiconductor light-emitting device according to claim 2 , wherein the semiconductor light-emitting chip is an ultraviolet light-emitting chip and the at least one phosphor of the wavelength converting layer includes at least one of a red phosphor, a green phosphor, and a blue phosphor.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
January 23, 2013
December 29, 2015
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