Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device, and electronic device

1. A pattern forming method comprising: (i) a step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of performing development by using a developer containing an organic solvent to form a negative pattern, wherein: the actinic ray-sensitive or radiation-sensitive resin composition contains (A) a resin capable of increasing the polarity by an action of an acid to decrease the solubility in a developer containing an organic solvent, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a solvent, and (D) a resin having a repeating unit having a fluorine atom and not having a CF 3 partial structure, and the repeating unit having a fluorine atom and not having a CF 3 partial structure in the resin (D) is a repeating unit having a linear or branched fluorinated alkyl group not having a CF 3 partial structure.

2. The pattern forming method as claimed in claim 1 , wherein the fluorinated alkyl group not having a CF 3 partial structure is a linear fluorinated alkyl group.

3. The pattern forming method as claimed in claim 1 , wherein the repeating unit having a fluorine atom and not having a CF 3 partial structure in the resin (D) is a repeating unit represented by the following formula (1): wherein each of Xc 1 , Xc 2 and Xc 3 independently represents a hydrogen atom, a halogen atom, or an alkyl group not having a CF 3 partial structure; L 1 represents a single bond or a divalent linking group not having a CF 3 partial structure; and Rf represents a fluorinated alkyl group not having a CF 3 partial structure.

4. The pattern forming method as claimed in claim 3 , wherein the terminal structure of the fluorinated alkyl group Rf not having a CF 3 partial structure is a CH 3 structure, a CH 2 F structure or a CHF 2 structure.

5. The pattern forming method as claimed in claim 3 , wherein L 1 does not have an ester bond.

6. The pattern forming method as claimed in claim 1 , wherein the resin (D) has a repeating unit represented by the following formula (2): wherein each of Xc 4 , Xc 5 and Xc 6 independently represents a hydrogen atom, a halogen atom, or an alkyl group not having a CF 3 partial structure; L 2 represents a single bond or a divalent linking group not having a CF 3 partial structure; and Ra represents a group having at least one CH 3 partial structure.

7. The pattern forming method as claimed in claim 6 , wherein Ra in the repeating unit represented by formula (2) is a group having at least one structure represented by the following any of formulae (D3) to (D6): wherein * represents a bond to be connected to other atom in the group having at least one structure represented by any of formulae (D3) to (D6), or to L 2 in the above formula (2).

8. The pattern forming method as claimed in claim 6 , wherein the mass percentage content (%) in the repeating unit represented by formula (2), which is accounted for by the CH 3 partial structure of the repeating unit represented by formula (2), is 18.0% or more.

9. The pattern forming method as claimed in claim 1 , wherein the weight average molecular weight of the resin (D) is 15,000 to 40,000.

10. The pattern forming method as claimed in claim 1 , wherein the developer is a developer containing at least one organic solvent selected from the group consisting of a ketone-based solvent, an ester-based solvent, an alcohol-based solvent, an amide-based solvent, and an ether-based solvent.

11. The pattern forming method as claimed in claim 1 , which further contains: (iv) a step of performing rinsing by using a rinsing solution containing an organic solvent.

12. The pattern forming method as claimed in claim 1 , wherein the actinic ray-sensitive or radiation-sensitive resin composition further contains a compound represented by the following formula (F): wherein in formula (F), each Ra independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or an aralkyl group, provided that when n=2, two Ra's may be the same or different, and two Ra's may combine with each other to form a divalent heterocyclic hydrocarbon group or a derivative thereof; each Rb independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group, provided that in —C(Rb)(Rb)(Rb), when one or more Rb's are a hydrogen atom, at least one of remaining Rb's is a cyclopropyl group or a 1-alkoxyalkyl group; at least two Rb's may combine to form an alicyclic hydrocarbon group, an aromatic hydrocarbon group, a heterocyclic hydrocarbon group, or a derivative thereof; and n represents an integer of 0 to 2, m represents an integer of 1 to 3, and n+m=3.

13. The pattern forming method as claimed in claim 1 , wherein the repeating unit having a fluorine atom and not having a CF 3 partial structure in the resin (A) is a repeating unit represented by any of the following formulae:

14. An actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin capable of increasing the polarity by an action of an acid to decrease the solubility in a developer containing an organic solvent, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a solvent, and (D) a resin having a repeating unit having a fluorine atom and not having a CF 3 partial structure, wherein the repeating unit having a fluorine atom and not having a CF 3 partial structure in the resin (D) is a repeating unit having a linear or branched fluorinated alkyl group not having a CF 3 partial structure.

15. A resist film formed with the actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 14 .

16. A method for manufacturing an electronic device, comprising employing the pattern forming method according to claim 1 to form a negative pattern on an inorganic or coating-type inorganic substrate suitable for use in a process of producing a semiconductor, a liquid crystal device or a circuit board.