Methods and apparatus for forming a semiconductor on glass-ceramic structure provide for: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a precursor glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer to thereby form an intermediate semiconductor on precursor glass structure; sandwiching the intermediate semiconductor on precursor glass structure between first and second support structures; applying pressure to one or both of the first and second support structures; and subjecting the intermediate semiconductor on precursor glass structure to heat-treatment step to crystallize the precursor glass resulting in the formation of a semiconductor on glass-ceramic structure.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor on glass-ceramic structure comprising: a semiconductor material component comprising a substantially single-crystal semiconductor material layer and an oxide layer of the single-crystal semiconductor material; an oxide glass material layer; and a glass-ceramic layer, wherein warpage of the semiconductor on glass-ceramic structure is no more than about 200 microns.
2. The semiconductor on glass-ceramic structure of claim 1 , wherein the warpage of the semiconductor on glass-ceramic structure is on the order of 10s of microns.
3. The semiconductor on glass-ceramic structure of claim 1 , wherein the warpage of the semiconductor on glass-ceramic structure is about 70 microns.
4. The semiconductor on glass-ceramic structure of claim 1 wherein the glass ceramic further comprises a first layer having an positive ion concentration of modifier positive ions, including at least one alkaline earth modifier ion from the first glass-ceramic layer; and a second layer comprising bulk glass-ceramic.
5. The semiconductor on glass-ceramic structure of claim 4 wherein the first layer includes an enhanced positive ion concentration of modifier positive ions as compared to a bulk portion of the glass-ceramic layer.
6. The semiconductor on glass-ceramic structure of claim 1 , wherein the oxide glass and the glass-ceramic is free of alkali ions.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
November 26, 2008
February 9, 2016
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.