On a plane of a semiconductor wafer, two types of in-plane regions comprising full-width non-ion-implantation regions and partial ion implantation regions, which are alternately arranged one or more times in a direction orthogonal to a scanning direction of an ion beam are created. During the creation of the partial ion implantation regions, reciprocating scanning using the ion beam can be repeated until the target dose can be satisfied while performing or stopping ion beam radiation onto the semiconductor wafer in a state in which the semiconductor wafer can be fixed. During the creation of the full-width non-ion-implantation regions, the semiconductor wafer can be moved without performing the ion beam radiation onto the semiconductor wafer. Then, by repeating fixing and movement of the semiconductor wafer plural times, ion implantation regions and non-ion-implantation regions are created in desired regions of the semiconductor wafer.
Legal claims defining the scope of protection, as filed with the USPTO.
1. An ion implantation method using an ion implantation apparatus, the method comprising: conveying ions generated in an ion source to a wafer as an ion beam to implant ions to the wafer; performing a reciprocating scanning using the ion beam in a scanning direction of an uniaxial direction in the middle of the conveyance, the scanned ion beam being configured to be deflected so as to be parallelized in the same direction, and the wafer being configured to be moved to a direction orthogonal to the scanning direction of the ion beam; and setting two types of in-plane regions on a wafer plane, wherein the two types of in-plane regions are alternately arranged at least once in a direction orthogonal to the scanning direction of the ion beam, wherein one of the two types represents full-width non-ion-implantation regions into which ions are not implanted over entire widths of the in-plane regions, and the other type of the two types represents partial ion implantation regions comprising first regions with ions implanted and second regions with no ions implanted, the first and second regions being alternately repeated in the scanning direction of the ion beam, and wherein, in each of the two types of the in-plane regions, ions are implanted only into predetermined regions within the wafer plane and ions are not implanted in regions other than the predetermined regions by performing ion implantation processes under different conditions.
2. The ion implantation method according to claim 1 , wherein, when the partial ion implantation regions are created, ion implantation is performed by fixing the wafer, and wherein, when the full-width non-ion-implantation regions are created, the wafer is moved without performing ion implantation, and fixing and movement of the wafer are repeated multiple times.
3. The ion implantation method according to claim 2 , wherein ion implantation angles to the wafer plane in the plural ion implantation regions set in one of the partial ion implantation regions are parallel with one another in any of the ion implantation regions.
4. The ion implantation method according to claim 2 , wherein ion implantation angles to the wafer plane in the ion implantation regions set in the plurality of partial ion implantation regions are parallel with one another in any of the ion implantation regions.
5. The ion implantation method according to claim 3 , wherein the number of scanning times of the ion beam is determined based on set doses of the ion implantation regions and a beam current value measured in advance before ion implantation into the wafer is performed, and wherein the set doses of the ion implantation regions are realized by performing scanning of the ion beam the number of scanning times in the partial ion implantation regions with the wafer being fixed.
6. The ion implantation method according to claim 5 , wherein the number of scanning times of the ion beam is an integer or a half-integer when the reciprocating scanning is set to be a basic unit.
7. The ion implantation method according to claim 1 , wherein, when the full-width non-ion-implantation regions are to be created, ion beam radiation onto the wafer is stopped such that a trajectory of the ion beam is deflected by applying a voltage to an electrode that is installed in a predetermined location of an ion conveyed region from the ion source to the wafer.
8. The ion implantation method according to claim 1 , further comprising: installing an electrode for deflecting a trajectory of the ion beam in a predetermined location of an ion conveyed region from the ion source to the wafer; when the partial ion implantation regions are to be created, stopping ion beam radiation onto the wafer such that a voltage application to the electrode is removed at positional coordinates identified in advance on the wafer when the creation of the ion implantation regions is started, and the voltage is applied to the electrode at positional coordinates on the wafer identified separately when the creation of the ion implantation regions ends.
9. The ion implantation method according to claim 1 , wherein, during ion implantation into one wafer, a plurality of types of patterns of the time in which a voltage is applied or removed are retained for each of the partial ion implantation regions which are set in plural, and a plurality of types of patterns of the number of scanning times of the ion beam are retained.
10. The ion implantation method according to claim 1 , wherein a first scanning frequency of the ion beam at the time of measuring the ion beam before ion implantation into the wafer is performed for measuring a beam width in the direction orthogonal to the scanning direction of the scanned ion beam and a beam current value of which the beam passes through a unit area in a unit time is different from a second scanning frequency of the ion beam during ion implantation into the wafer plane.
11. The ion implantation method according to claim 10 , wherein the first scanning frequency is 40 Hz or higher, and the second scanning frequency is 1 Hz or lower.
12. The ion implantation method according to claim 1 , further comprising creating a plurality of types of ion implantation regions such that at least one of an ion implantation region length in the scanning direction of the ion beam, an ion implantation region length in the direction orthogonal to the scanning direction of the ion beam, and the dose of the ion implantation regions are different.
13. The ion implantation method according to claim 12 , wherein the ion implantation region length in the scanning direction of the ion beam is set in the range of 2 mm or longer and 80 mm or shorter.
14. The ion implantation method according to claim 12 , wherein the ion implantation region length in the direction orthogonal to the scanning direction of the ion beam is set in the range of 2 mm or longer and 80 mm or shorter.
15. The ion implantation method according to claim 12 , wherein the dose of the ion implantation regions are set in the range of 1E13/cm 2 or more and 1 E17/cm 2 or less.
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January 23, 2013
April 5, 2016
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