Semiconductor light-emitting device

1. A semiconductor light emitting device, comprising: a supporting substrate having a first surface and a second surface opposite to the first surface; at least one semiconductor stack formed on the first surface, wherein each stack includes a plurality of semiconductor layers grown sequentially using a growth substrate and composed of a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light via electron-hole recombination, and wherein a growth substrate-removed surface is formed on a side of the first semiconductor layer; a bonded layer, which bonds a second semiconductor layer side of the plurality of semiconductor layers to the first surface of the supporting substrate; and a bonded layer-removed surface formed on the first surface, being open towards the plurality of semiconductor layer, wherein at least two semiconductor stacks (which are referred to a first semiconductor stack and a second semiconductor stack) are provided, the supporting substrate has a first electrical pass transferring either electrons or holes and a second electrical pass transferring either holes or electrons, for each of the semiconductor stacks, with the first electrical pass continuing to the first surface from the second surface, the bonded layer is electrically connected with the first electrical pass, and the semiconductor light emitting device further comprises an electrical connection for connecting the first semiconductor stack on a side of the second surface with at least one of the first and second electrical passes of the second semiconductor stack, wherein the semiconductor light emitting device further comprises an additional electrical pass transferring either electrons or holes from the second electrical pass to the plurality of semiconductor layers.

2. The semiconductor light emitting device according to claim 1 , wherein the electrical connection connects the second electrical pass of the first semiconductor stack with the first electrical pass of the second semiconductor stack.

3. The semiconductor light emitting device according to claim 1 , wherein the second electrical pass of the first semiconductor stack and the first electrical pass of the second semiconductor stack are integrated.

4. The semiconductor light emitting device according to claim 1 , wherein the electrical connection is covered with an insulating layer, and a rear electrode electrically connected with one of the first and second semiconductor stacks is formed on the insulating layer.

5. The semiconductor light emitting device according to claim 1 , wherein the first electrical pass of the first semiconductor stack is connected with the first electrical pass of the second semiconductor stack, and the second electrical pass of the first semiconductor stack is connected with the second electrical pass of the second semiconductor stack.

6. The semiconductor light emitting device according to claim 1 , wherein the first electrical pass of the first semiconductor stack is connected with the second electrical pass of the second semiconductor stack, and the second electrical pass of the first semiconductor stack is connected with the first electrical pass of the second semiconductor stack.

7. The semiconductor light emitting device according to claim 1 , wherein the first semiconductor layer, the active layer and the second semiconductor layer are Group III-nitride semiconductors.

8. A semiconductor light emitting device, comprising: a supporting substrate having a first surface and a second surface opposite to the first surface; at least one semiconductor stack formed on the first surface, wherein each stack includes a plurality of semiconductor layers grown sequentially using a growth substrate and composed of a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light via electron-hole recombination, and wherein a growth substrate-removed surface is formed on a side of the first semiconductor layer; a bonded layer, which bonds a second semiconductor layer side of the plurality of semiconductor layers to the first surface of the supporting substrate; and a bonded layer-removed surface formed on the first surface, being open towards the plurality of semiconductor layer to supply current thereto, wherein at least two semiconductor stacks (which are referred to a first semiconductor stack and a second semiconductor stack) are provided, the supporting substrate has a first electrical pass transferring either electrons or holes and a second electrical pass transferring either holes or electrons, for each of the semiconductor stacks, with the first electrical pass continuing to the first surface from the second surface, the bonded layer is electrically connected with the first electrical pass, and the semiconductor light emitting device further comprises an electrical connection for connecting the first semiconductor stack on a side of the second surface with at least one of the first and second electrical passes of the second semiconductor stack, wherein the bonded layer of the second semiconductor stack covers the second electrical pass of the first semiconductor stack.

9. A semiconductor light emitting device, comprising: a supporting substrate having a first surface and a second surface opposite to the first surface; at least one semiconductor stack formed on the first surface, wherein each stack includes a plurality of semiconductor layers grown sequentially using a growth substrate and composed of a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light via electron-hole recombination, and wherein a growth substrate-removed surface is formed on a side of the first semiconductor layer; a bonded layer, which bonds a second semiconductor layer side of the plurality of semiconductor layers to the first surface of the supporting substrate; and a bonded layer-removed surface formed on the first surface, being open towards the plurality of semiconductor layer to supply current thereto, wherein the supporting substrate is composed of a semiconductor and has a first electrical pass continuing to the first surface from the second surface, and a second electrical pass, the first electrical pass transferring either electrons or holes to the plurality of semiconductor layers, the second electrical pass transferring either holes or electrons to the plurality of semiconductor layers, and the semiconductor light emitting device further comprises: at least one PN junction diode formed on the supporting substrate, the PN junction diodes being electrically connected with the plurality of semiconductor layers by the first and second electrical passes.

10. The semiconductor light emitting device according to claim 9 , wherein the at least one PN junction diodes and the plurality of semiconductors are connected in parallel in a reverse direction.

11. The semiconductor light emitting device according to claim 9 , wherein each of the at least one PN junction diode has a first conductive part having a different conductivity from the first conductivity of the first semiconductor layer, and a second conductive part having the same conductivity as the first conductivity of the first semiconductor layer, and the first electrical pass is electrically connected with the first conductive part, and the second electrical pass is electrically connected with the second conductive part.

12. The semiconductor light emitting device according to claim 9 , wherein the supporting substrate is composed of AlN.

13. The semiconductor light emitting device according to claim 9 , wherein the supporting substrate is composed of an undoped Si.

14. The semiconductor light emitting device according to claim 9 , wherein the bonded layer is electrically connected with the first electrical pass, and the semiconductor light emitting device further comprises: an electrical connection which is exposed to the bonded layer-removed surface through the second electrical pass, and electrically connects the second electrical pass exposed on the bonded layer-removed surface with the plurality of semiconductor layers, for transferring either electrons or holes.

15. The semiconductor light emitting device according to claim 9 , wherein at least two semiconductor stacks are electrically connected on the side of the second surface of the supporting substrate.

16. The semiconductor light emitting device according to claim 9 , wherein at least two semiconductor stacks are electrically connected on the side of the first surface of the supporting substrate.

17. The semiconductor light emitting device according to claim 9 , wherein the at least one PN junction diodes is electrically connected with the first and second electrical passes to form a rectifier circuit.

18. The semiconductor light emitting device according to claim 9 , wherein the supporting substrate is composed of a semiconductor and has a first electrical pass continuing to the first surface from the second surface, and a second electrical pass, the first electrical pass transferring either electrons or holes to the plurality of semiconductor layers, the second electrical pass transferring either holes or electrons to the plurality of semiconductor layers, and the semiconductor light emitting device further comprises: at least one electrostatic protection element integrated into the supporting substrate, the electrostatic protection element being electrically connected with the plurality of semiconductor layers by the first and second electrical passes.