Patentable/Patents/US-9374538
US-9374538

Image sensor with embedded infrared filter layer

PublishedJune 21, 2016
Assigneenot available in USPTO data we have
Inventorsnot available in USPTO data we have
Technical Abstract

An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices are disposed in the substrate. The color filter layer is disposed to cover the photosensitive devices. The micro-lens layer is disposed on the color filter layer. The infrared filter layer directly covers the micro-lens layer.

Patent Claims
13 claims

Legal claims defining the scope of protection, as filed with the USPTO.

1

1. An image sensor, comprising: a substrate; a plurality of photosensitive devices disposed in the substrate; an infrared color filter structure disposed to cover the photosensitive devices, wherein the infrared color filter structure comprises an infrared filter layer disposed over the substrate and a color filter layer disposed on the infrared filter layer; and a micro-lens layer disposed on the infrared color filter structure, wherein a refractive index of the color filter layer is equal to a square root of a product of a refractive index of the infrared filter layer and a refractive index of the micro-lens layer.

2

2. The image sensor of claim 1 , further comprising an anti-reflective coating layer disposed between the substrate and the infrared color filter structure.

3

3. The image sensor of claim 1 , wherein the infrared filter layer comprises a reflective infrared filter structure.

4

4. The image sensor of claim 3 , wherein the reflective infrared filter structure is a multi-film stacked structure.

5

5. The image sensor of claim 4 , wherein the multi-film stacked structure comprises a plurality of films, and the films of the multi-film stacked structure have different refractive indexes in an infrared region.

6

6. The image sensor of claim 1 , wherein the substrate is formed from silicon, carbon, germanium, gallium, arsenic, nitrogen, indium or phosphorus.

7

7. A method for manufacturing an image sensor, the method comprising: forming a plurality of photosensitive devices in a substrate; forming a color filter layer to cover the photosensitive devices; forming a micro-lens layer above the color filter layer; and forming an infrared filter layer above the substrate and adjacent to the color filter layer and/or the micro-lens layer, wherein the color filter layer is formed to have a refractive index which is equal to a square root of a product of a refractive index of the infrared filter layer and a refractive index of the micro-lens layer.

8

8. The method of claim 7 , wherein forming the infrared filter layer is performed to form the infrared filter layer under the color filter layer.

9

9. The method of claim 7 , further comprising forming an anti-reflective coating layer on the substrate before forming the color filter layer to form the anti-reflective coating layer between the substrate and the color filter layer.

10

10. The method of claim 7 , wherein the infrared filter layer is formed to comprise a reflective infrared filter structure.

11

11. The method of claim 10 , wherein the reflective infrared filter structure is formed to be a multi-film stacked structure.

12

12. The method of claim 11 , wherein the multi-film stacked structure is formed to comprise a plurality of films, and the films of the multi-film stacked structure have different refractive indexes in an infrared region.

13

13. The method of claim 7 , wherein the color filter layer is formed by using a coating process.

Classification Codes (CPC)

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Patent Metadata

Filing Date

September 15, 2014

Publication Date

June 21, 2016

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Cite as: Patentable. “Image sensor with embedded infrared filter layer” (US-9374538). https://patentable.app/patents/US-9374538

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