The invention relates to a method for manufacturing a waveguide (40) including a semiconducting junction (23). The method comprises the following steps: providing a support (10) comprising a semiconducting layer (20) having a first part (21) of a first conductivity type ; protecting the first part ; selectively implanting a second conductivity-type dopants in a second part (22) of the semiconducting layer (20) adjacent to the first part (21, 221). The concentration of second conductivity-type dopants in the second part (22, 222) is greater than the one of first conductivity-type dopants in the first part (21, 221). The method further comprises the steps of: diffusing second conductivity-type dopants in the first part (21, 221) to form a semiconducting junction (23, 223) in the first part (21, 221), and partially etching the semiconducting layer (20, 200) to form the waveguide (40, 240) in the first part (21, 221), the protection of the first part (21, 221) being used so that the semiconducting junction (23, 223) is included in the waveguide (40, 240).
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for manufacturing a waveguide including a semiconducting junction, the method comprising: providing a support comprising a semiconducting layer having at least one first part of a first conductivity type comprising a concentration of first conductivity-type dopants, protecting the first part of the semiconducting layer by providing a protection of the first part, selectively implanting dopants of a second conductivity type opposite to the first conductivity type in a second part of the semiconducting layer, the implantation selectivity being achieved by means of the protection of the first part so that the second part is adjacent to the first part, the implantation being made so that the concentration of second conductivity-type dopants in the second part is greater than the concentration of the first conductivity-type dopants in the first part, diffusing the dopants of the second conductivity type in the first part to form a semiconducting junction in the first part, after the steps of implanting and diffusing have been performed, partially etching the semiconducting layer to form the waveguide in the first part, the protection of the first part being used during this etching to bound a first side wall of the waveguide at the interface between the first and the second parts so that the semiconducting junction is included in the waveguide.
2. The manufacturing method according to claim 1 of a waveguide of a width W, wherein the concentration of the dopants of the second conductivity type implanted during the implanting step is adapted so that during diffusing the dopants of the second conductivity type in the first part, diffusion occurs from the interface between the first and the second parts over a distance between 10 and 70% of the width W.
3. The manufacturing method according to claim 2 , wherein the ratio of the concentration of the dopants of the second conductivity type dopants implanted in the second part to the dopants of the first conductivity type dopants in the first part is between 2 and 30.
4. The manufacturing method according to claim 1 , wherein during providing the support the area of the layer which is intended to form the second part is also of the first conductivity type and includes a concentration of the dopants of the first conductivity type substantially identical to the concentration of the first part.
5. The manufacturing method according to claim 1 , wherein during the protecting the first part, a first mask is deposited which protects the area of the first part intended to form the waveguide during the steps of implanting and etching and a second mask is also deposited which protects the remainder of the first part during implanting, the manufacturing method comprising prior to the etching a removing the second mask.
6. The manufacturing method according to claim 1 , wherein the support is a semiconductor-on-insulator-type support, the semiconducting layer being the semiconductor layer on insulator of the support.
7. The manufacturing method according to claim 1 , wherein the semiconducting layer is a silicon layer.
8. The manufacturing method according to claim 7 , wherein ones among the first and second conductivity-type dopants are selected from the group consisting of boron, aluminium and indium whereas others among the first and second conductivity-type dopants are selected from the group consisting of phosphorus, arsenic and antimony.
9. The manufacturing method according to claim 8 , wherein the ones among the first and second conductivity-type dopants are boron, whereas the others among the first and second conductivity-type dopants are phosphorus.
10. A method for manufacturing an optoelectronic component having a waveguide including a semiconducting junction, wherein the manufacturing method comprises the method of manufacturing a waveguide according to claim 1 .
11. The manufacturing method according to claim 10 , wherein the optoelectronic component includes an optical modulator such as a Mach-Zehnder-type or resonant ring-type modulator.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
November 30, 2015
September 6, 2016
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