To provide a light-emitting device whose amount of light can be adjusted, or the like. The amount of light emitted from the light-emitting device can be adjusted by controlling the magnitude of the constant current pulse by a control signal. Specifically, the light-emitting device includes a constant current supply configured to be supplied with a control signal and a control pulse signal and configured to supply a constant current pulse; a control device configured to supply the control signal; a driver circuit configured to supply the control pulse signal; and a light-emitting panel configured to be supplied with the constant current pulse. The control signal is a signal for controlling the magnitude of the constant current pulse. The light-emitting panel includes a light-emitting element. The current density of the light-emitting element is greater than or equal to 10 mA/cm2 and less than or equal to 1000 mA/cm2.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device having a photography function comprising: a current supply including a DC-DC converter configured to supply a current pulse; a driver circuit including a start switch and configured to supply a control pulse signal to the DC-DC converter in accordance with switching operation of the start switch; and a light-emitting portion configured to be supplied with the current pulse, wherein the light-emitting portion is configured to emit light for more than or equal to 1 millisecond and less than or equal to 1000 milliseconds as a flash in accordance with the current pulse when taking a photograph, and wherein an area of the light-emitting portion is greater than or equal to 0.5 cm 2 and less than or equal to 1 m 2 .
2. The semiconductor device according to claim 1 , wherein the light-emitting portion comprises a support substrate and a light-emitting element over the support substrate, and wherein the light-emitting element comprises a first electrode a second electrode overlapping with the first electrode, and an EL layer between the first electrode and the second electrode.
3. The semiconductor device according to claim 2 , wherein the support substrate is a flexible substrate, and wherein the light-emitting portion has a curved surface.
4. The semiconductor device according to claim 1 , wherein the current supply further comprises an AC-DC converter.
5. A camera comprising the semiconductor device according to claim 1 .
6. A semiconductor device having a photography function comprising: a current supply including a DC-DC converter configured to supply a current pulse; a driver circuit including a start switch and configured to supply a control pulse signal to the DC-DC converter in accordance with switching operation of the start switch; a light-emitting portion configured to be supplied with the current pulse; and an optical sensor configured to detect a brightness around the semiconductor device, wherein the light-emitting portion is configured to emit light for more than or equal to 1 millisecond and less than or equal to 1000 milliseconds as a flash in accordance with the current pulse when taking a photograph, wherein an area of the light-emitting portion is greater than or equal to 0.5 cm 2 and less than or equal to 1 m 2 , and wherein an amount of the light is configured to be adjusted by the detected brightness.
7. The semiconductor device according to claim 6 , wherein the light-emitting portion comprises a support substrate and a light-emitting element over the support substrate, and wherein the light-emitting element comprises a first electrode a second electrode overlapping with the first electrode, and an EL layer between the first electrode and the second electrode.
8. The semiconductor device according to claim 7 , wherein the support substrate is a flexible substrate, and wherein the light-emitting portion has a curved surface.
9. The semiconductor device according to claim 6 , wherein the current supply further comprises an AC-DC converter.
10. A camera comprising the semiconductor device according to claim 6 .
11. A semiconductor device having a photography function comprising: a current supply including a DC-DC converter configured to supply a current pulse; a driver circuit including a start switch and configured to supply a control pulse signal to the DC-DC converter in accordance with switching operation of the start switch; a light-emitting portion configured to be supplied with the current pulse; and an distance sensor configured to detect a distance from the semiconductor device to a subject for photograph, wherein the light-emitting portion is configured to emit light for more than or equal to 1 millisecond and less than or equal to 1000 milliseconds as a flash in accordance with the current pulse when taking a photograph, wherein an area of the light-emitting portion is greater than or equal to 0.5 cm 2 and less than or equal to 1 m 2 , and wherein an amount of the light is configured to be adjusted by the detected distance.
12. The semiconductor device according to claim 11 , wherein the light-emitting portion comprises a support substrate and a light-emitting element over the support substrate, and wherein the light-emitting element comprises a first electrode a second electrode overlapping with the first electrode, and an EL layer between the first electrode and the second electrode.
13. The semiconductor device according to claim 12 , wherein the support substrate is a flexible substrate, and wherein the light-emitting portion has a curved surface.
14. The semiconductor device according to claim 11 , wherein the current supply further comprises an AC-DC converter.
15. A camera comprising the semiconductor device according to claim 11 .
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
February 25, 2016
October 4, 2016
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