Apparatus (1, 26) for depositing a layer (37, 38, 39) on a substrate (2) in a process gas comprises a chuck (3) comprising a first surface (4) for supporting the substrate (2), a clamp (4) for securing the substrate (2) to the first surface (14) of the chuck (3), an evacuatable enclosure (5) enclosing the chuck (3) and the clamp (4) and comprising an inlet, through which the processing gas is insertable into the enclosure (5), and control apparatus (19). The control apparatus (19) is adapted to move at least one of the chuck (3) and the clamp (4) relative to, and independently of, one another to adjust a spacing between the chuck (3) and the clamp (4) during a single deposition process while maintaining a flow of the processing gas and a pressure within the enclosure (5) that is less than atmospheric pressure.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for depositing a layer onto a substrate, comprising: inserting the substrate ( 2 ) into an evacuatable enclosure ( 5 ), and positioning the substrate ( 2 ) between a clamp ( 4 ) and a chuck ( 3 ) arranged within the enclosure ( 5 ), the chuck ( 3 ) including a cooling circuit for circulating a liquid or a gas through the cooling circuit, and whilst a pressure within the enclosure ( 5 ) is less than atmospheric pressure: supplying a processing gas to the enclosure ( 5 ); depositing a first layer ( 37 ) onto a first side the substrate ( 2 ) whilst supplying the processing gas and whilst the first side ( 15 ) of the substrate ( 2 ) is spaced at a distance from the clamp ( 4 ), bringing the clamp ( 4 ) into direct physical contact with at least a portion of the first layer ( 37 ) deposited on the first side ( 15 ) of the substrate ( 2 ), and depositing a further layer ( 38 ) onto the first layer ( 37 ) whilst maintaining a supply of the processing gas, whilst maintaining the pressure in the enclosure ( 5 ) at less than atmospheric pressure and whilst the clamp ( 4 ) is in physical contact with the at least a portion of the first layer and secures the substrate ( 2 ) to the chuck ( 3 ), wherein the clamp ( 4 ) does not contact the first side ( 15 ) of the substrate ( 2 ), wherein the first layer ( 37 ) is deposited without active cooling of the substrate ( 2 ) by not circulating the liquid or the gas through the cooling circuit, and wherein the further layer ( 38 ) is deposited with active cooling of the substrate ( 2 ) by circulating the liquid or the gas through the cooling circuit.
2. The method according to claim 1 , further comprising placing the substrate ( 2 ) in contact with a first surface ( 13 ) of the chuck ( 3 ) before depositing the first layer.
3. The method according to claim 1 or claim 2 , further comprising: placing the substrate ( 2 ) on moveable pins ( 23 ) which protrude above the first surface ( 13 ) of the chuck ( 3 ) and space the substrate ( 2 ) at a distance from the chuck ( 3 ), and placing the substrate ( 2 ) on the first surface ( 15 ) of the chuck ( 3 ) by retracting the pins ( 23 ).
4. The method according to claim 1 , further comprising: supporting the clamp ( 4 ) on movable pins ( 24 ), moving the pins ( 24 ), and positioning the clamp ( 4 ) spaced at a distance above the first side ( 15 ) of the substrate ( 2 ) during deposition of the first layer ( 37 ).
5. The method according to claim 4 , wherein the clamp ( 4 ) is brought into contact with the first side ( 15 ) of the substrate ( 2 ) by retracting the pins ( 24 ).
6. The method according to claim 1 , wherein the chuck ( 3 ) is movable and the chuck ( 3 ) is moved relative to the clamp ( 4 ) and the clamp ( 4 ) is brought into contact with the first side ( 15 ) of the substrate ( 2 ).
7. The method according to claim 1 , further comprising applying energy to a material source ( 6 ) comprising material to be deposited whereby portions of the material source ( 6 ) are removed, deposited onto the substrate ( 2 ) and form the layer ( 39 ) on the first side ( 15 ) of the substrate ( 2 ).
8. The method according to claim 7 , wherein the portions of the material source ( 6 ) that are removed comprise one or more elements which are deposited onto the substrate ( 2 ) and form a metallic layer on the substrate ( 2 ).
9. The method according to claim 1 , further comprising supplying gaseous material to the enclosure ( 5 ), the gaseous material comprising one or more compounds which react within the enclosure ( 5 ), releasing one or more elements which are deposited onto the substrate ( 2 ) and form the layer ( 39 ).
10. The method according to claim 9 , wherein the one or more elements deposited onto the substrate ( 2 ) form a metallic layer on the substrate ( 2 ).
11. The method according to claim 1 , wherein the substrate ( 2 ) comprises a semiconductor.
12. The method according to claim 11 , wherein the substrate ( 2 ) comprises a semiconductor wafer or a composite comprising semiconductor portions embedded in a plastic matrix.
13. The method according to claim 1 , wherein a thickness of the first layer ( 37 ) is monitored during deposition and the clamp ( 4 ) is brought into contact with the at least a portion of the first layer when the first layer ( 37 ) has a pre-defined thickness.
14. The method according to claim 1 , wherein the first layer ( 37 ) is deposited for a first time span and the further layer ( 38 ) is deposited for a second time span.
15. The method according to claim 14 , wherein the first layer ( 37 ) and the further layer ( 38 ) are deposited over a total time span and the first time span is between 1% and 50% of the total time span.
16. The method according to claim 15 , wherein the first time span is between 10 to 20% of the total time span.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
December 7, 2011
November 8, 2016
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