A metal-insulation-metal (MIM) device including a first metal layer, a first insulation layer, a second metal layer, and a second insulation layer is provided. The first insulation layer is disposed on the first metal layer. The second metal layer is disposed on a part of the first insulation layer. The second insulation layer is disposed on a side wall of the second metal layer and on another part of the first insulation layer. A width of the first insulation layer under the second metal layer and the second insulation layer parallel to the first metal layer is greater than a with of the second metal layer parallel to the first metal layer.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A metal-insulation-metal (MIM) device comprising: a first metal layer; a first insulation layer disposed on the first metal layer; a second metal layer disposed on a part of the first insulation layer; and a second insulation layer disposed on a side wall of the second metal layer and on another part of the first insulation layer; wherein a width of the first insulation layer under the second metal layer and the second insulation layer parallel to the first metal layer is greater than a width of the second metal layer parallel to the first metal layer, wherein the first insulation layer comprising a multilayer structure, and the multilayer structure comprises a first silicon dioxide sub-layer, a second silicon dioxide sub-layer and a silicon nitride sub-layer, wherein the first silicon dioxide sub-layer is disposed between the silicon nitride sub-layer and the first metal layer, the second silicon dioxide sub-layer is disposed between the silicon nitride sub-layer and the second metal layer, and the silicon nitride sub-layer is disposed between the first silicon dioxide sub-layer and the second silicon dioxide sub-layer, wherein a width of the first silicon dioxide sub-layer parallel to the first metal layer is greater than a width of the silicon nitride sub-layer parallel to the first metal layer, and the width of the silicon nitride sub-layer parallel to the first metal layer is greater than a width of the second silicon dioxide sub-layer parallel to the first metal layer.
2. The MIM device according to claim 1 further comprising a third insulation layer covering the first metal layer, the first insulation layer, the second insulation layer and the second metal layer.
3. The MIM device according to claim 1 , wherein a width of the second insulation layer parallel to the first metal layer gradually decreases from a side of the second insulation layer close to the first metal layer to another side of the second insulation layer away from the first metal layer.
4. The MIM device according to claim 1 , wherein the second insulation layer is a silicon dioxide layer.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
May 12, 2015
December 13, 2016
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