It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A display device comprising: a gate electrode over a substrate; a first insulating layer over the gate electrode; an oxide semiconductor layer over the first insulating layer; a source electrode over the oxide semiconductor layer; a drain electrode over the oxide semiconductor layer; a second insulating layer over the oxide semiconductor layer; and a pixel electrode electrically connected to the drain electrode or the source electrode through a contact hole opened in the second insulating layer, wherein the first insulating layer contains a boron element at greater than or equal to 1×10 18 cm −3 and less than or equal to 1×10 22 cm −3 ; and wherein the second insulating layer contains a boron element at greater than or equal to 1×10 18 cm 3 and less than or equal to 1×10 22 cm 3 .
2. The display device according to claim 1 , wherein the second insulating layer is in contact with the oxide semiconductor layer.
3. The display device according to claim 1 , wherein the first insulating layer and the second insulating layer are each formed of silicon oxide.
4. The display device according to claim 1 , further comprising a liquid crystal layer formed over the pixel electrode.
5. The display device according to claim 1 , further comprising an EL layer formed over the pixel electrode.
6. A display device comprising: a gate electrode over a substrate; a first insulating layer over the gate electrode; an oxide semiconductor layer over the first insulating layer; a source electrode over the oxide semiconductor layer; a drain electrode over the oxide semiconductor layer; a second insulating layer over the oxide semiconductor layer; and a pixel electrode electrically connected to the drain electrode or the source electrode through a contact hole opened in the second insulating layer, wherein the first insulating layer contains an aluminum element at greater than or equal to 1×10 18 cm −3 and less than or equal to 1×10 22 cm −3 ; and wherein the second insulating layer contains an aluminum element at greater than or equal to 1×10 18 cm 3 and less than or equal to 1×10 22 cm 3 .
7. The display device according to claim 6 , wherein the second insulating layer is in contact with the oxide semiconductor layer.
8. The display device according to claim 6 , wherein the first insulating layer and the second insulating layer are each formed of silicon oxide.
9. The display device according to claim 6 , further comprising a liquid crystal layer formed over the pixel electrode.
10. The display device according to claim 6 , further comprising an EL layer formed over the pixel electrode.
11. A display device comprising: a gate electrode over a substrate; a first insulating layer over the gate electrode; an oxide semiconductor layer over the first insulating layer; a source electrode over the oxide semiconductor layer; a drain electrode over the oxide semiconductor layer; a second insulating layer over the oxide semiconductor layer; and a pixel electrode electrically connected to the drain electrode or the source electrode through a contact hole opened in the second insulating layer, wherein the first insulating layer contains a phosphorus element at greater than or equal to 1×10 18 cm −3 and less than or equal to 1×10 22 cm −3 ; and wherein the second insulating layer contains a phosphorus element at greater than or equal to 1×10 18 cm 3 and less than or equal to 1×10 22 cm 3 .
12. The display device according to claim 11 , wherein the second insulating layer is in contact with the oxide semiconductor layer.
13. The display device according to claim 11 , wherein the first insulating layer and the second insulating layer are each formed of silicon oxide.
14. The display device according to claim 11 , further comprising a liquid crystal layer formed over the pixel electrode.
15. The display device according to claim 11 , further comprising an EL layer formed over the pixel electrode.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
March 16, 2015
January 3, 2017
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